考虑空间电离辐射耦合的SOI器件NBTI失效机理与模型研究
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | Study of Total-Ionizing-Dose Effects on a Single-Event-Hardened Phase-Locked Loop | 期刊论文 | Chen Zhuojun;Hu Yuanyuan;Ding Ding;Dong Yemin;Shan Yi;Zheng Yunlong;Zhou Shuxing;Peng Chao;Chen Rongmei;Chen ZJ |
2 | Radiation Hardening by the Modification of Shallow Trench Isolation Process in Partially Depleted SOI MOSFETs | 期刊论文 | Peng Chao;En Yunfei;Chen Yiqiang;Lei Zhifeng;Zhang Zhangang;Hu Zhiyuan;Zhang Zhengxuan;Li Bin;Peng C |
3 | 绝缘体上硅金属氧化物半导体场效应晶体管中辐射导致的寄生效应研究 | 期刊论文 | 彭超;恩云飞;李斌;雷志锋;张战刚;何玉娟;黄云 |
4 | Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET | 期刊论文 | Chao Peng;Zhifeng Lei;Rui Gao;Zhangang Zhang;Yiqiang Chen;Yunfei En;Yun Huang |
5 | 纳米MOSFET器件的总剂量辐射试验方法、装置和设备 | 专利 | 何玉娟;高汭;雷志锋;张战刚;彭超 |
6 | 基于TCAD的绝缘体上硅器件总剂量效应仿真技术研究 | 期刊论文 | 彭超;雷志锋;张战刚;何玉娟;黄云;恩云飞 |
7 | Thermal Annealing of Total Ionizing Dose Effect for Partially-Depleted SOI MOSFET | 会议论文 | Chao Peng;Zhifeng Lei;Zhangang Zhang;Yujuan He;Yun Huang;Yunfei En |
8 | Research on Negative Bias Temperature Instability Effects under the Coupling of Total Ionizing Dose Irradiation for PDSOI MOSFETs | 期刊论文 | Chao Peng;Rui Gao;Zhifeng Lei;Zhangang Zhang;Yiqiang Chen;Yunfei En;Yun Huang |
9 | 辐射效应测试板、系统、获取连接线长度的方法及装置 | 专利 | 张战刚;黄云;雷志锋;彭超;何玉娟;肖庆中 |
10 | 单粒子效应评估方法和装置 | 专利 | 彭超;恩云飞;雷志锋;张战刚;何玉娟;黄云 |
11 | Influence of Buried Oxide Si+ Implantation on TID and NBTI effects for PDSOI MOSFETs | 期刊论文 | Chao Peng;Yunfei En;Zhifeng Lei;Rui Gao;Zhangang Zhang;Yujuan He;Yiqiang Chen;Yun Huang |