电离总剂量对纳米SRAM器件单粒子效应的影响机制
U1532261
2015
A3203.兰州重离子加速器
陆妩
联合基金项目
研究员
中国科学院新疆理化技术研究所
248万元
协同效应;单粒子效应;辐射物理;纳米器件;总剂量效应
2016-01-01到2019-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
查看更多信息请先登录或注册
查看更多信息请先登录或注册
查看更多信息请先登录或注册
| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | 低失调电压双极运放的单粒子瞬态特性研究 | 期刊论文 | 于新;陆妩;姚帅;荀明珠;王信;李小龙;孙静 |
| 2 | Pattern dependence in synergistic effects of total dose on single-event upset hardness | 期刊论文 | Guo Hongxia;Ding Lili;Xiao Yao;Zhang Fengqi;Luo Yinhong;Zhao Wen;Wang Yuanming |
| 3 | Total Ionizing Dose Influence on the Single-Event Upset Sensitivity of 130-nm PD SOI SRAMs | 期刊论文 | Zheng Qiwen;Cui Jiangwei;Liu Mengxin;Zhou Hang;Liu Mohan;Wei Ying;Su Dandan;Ma Teng;Lu Wu;Yu Xuefeng;Guo Qi;He Chengfa |
| 4 | 一种基于三维叠层封装SRAM器件的在轨单粒子翻转甄别系统 | 专利 | 郑齐文;崔江维;余学峰;陆妩;孙静;李豫东;郭旗 |
| 5 | Direct measurement and analysis of total ionizing dose effect on 130 nm PD SOI SRAM cell static noise margin | 期刊论文 | Zheng Qiwen;Cui Jiangwei;Liu Mengxin;Su Dandan;Zhou Hang;Ma Teng;Yu Xuefeng;Lu Wu;Guo Qi;Zhao Fazhan |
| 6 | Mechanism of Degradation Rate on the Irradiated Double-Polysilicon Self-Aligned Bipolar Transistor | 期刊论文 | Liu Mohan;Lu Wu;Yu Xin;Wang Xin;Li Xiaolong;Yao Shuai;Guo Qi |
| 7 | Influences of total ionizing dose on single event effect sensitivity in floating gate cells | 期刊论文 | Yin Ya Nan;Liu Jie;Ji Qing Gang;Zhao Pei Xiong;Liu Tian Qi;Ye Bing;Luo Jie;Sun You Mei;Hou Ming Dong |
| 8 | Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor | 期刊论文 | Li Xiao Long;Lu Wu;Wang Xin;Yu Xin;Guo Qi;Sun Jing;Liu Mo Han;Yao Shuai;Wei Xin Yu;He Cheng Fa |
| 9 | Effects of Total-Ionizing-Dose Irradiation on Single-Event Burnout for Commercial Enhancement-Mode AlGaN/GaN High-Electron Mobility Transistors | 期刊论文 | Si-Yuan Chen;Xin Yu;Wu Lu;Shuai Yao;Xiao-Long Li;Xin Wang;Mo-han Liu;Shan-xue Xi;Li-Bin Wang;Jing Sun;Chengfa He;Qi Guo |
| 10 | Read Static Noise Margin Decrease of 65-nm 6-T SRAM Cell Induced by Total Ionizing Dose | 期刊论文 | Zheng Qiwen;Cui Jiangwei;Yu Xuefeng;Lu Wu;He Chengfa;Ma Teng;Zhao Jinghao;Ren Diyuan;Guo Qi |
| 11 | 典型模拟电路低剂量率辐照损伤增强效应的研究与评估 | 期刊论文 | 李小龙;陆妩;王信;郭旗;何承发;孙静;于新;刘默寒;贾金成;姚帅;魏昕宇 |
| 12 | 超深亚微米 SOI 总剂量效应泄漏电流模型 | 期刊论文 | 席善学;郑齐文;崔江维;魏莹;姚帅;何承发;郭旗;陆妩 |
| 13 | Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 | 期刊论文 | Yao Shuai;Lu Wu;Yu Xin;Wang Xin;Li Xiaolong;Liu Mohan;Sun Jing;Wei XinYu;Chang YaoDong;Guo Qi;He ChengFa |
| 14 | Simulation of Synergism Effect Using Temperature Switching Irradiation on Bipolar Comparator | 期刊论文 | Yu Xin;Lu Wu;Yao Shuai;Guo Qi;Sun Jing;Wang Xin;Liu Mo Han;Li Xiao Long |
| 15 | The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose | 期刊论文 | Zheng Qiwen;Cui Jiangwei;Lu Wu;Guo Hongxia;Liu Jie;Yu Xuefeng;Wei Ying;Wang Liang;Liu Jiaqi;He Chengfa;Guo Qi |
| 16 | The influence of channel width on total ionizing dose responses of the 130 nm H-gate partially depleted SOI NMOSFETs | 期刊论文 | Shanxue Xi;Qiwen Zheng;Wu Lu;Jiangwei Cui;Ying Wei;Baosun Wang;Qi Guo |
| 17 | 一种基于阈值电压类型匹配的6-T存储单元抗总剂量加固方法 | 专利 | 郑齐文;崔江维;余学峰;陆妩;孙静;李豫东;郭旗 |
| 18 | Total Ionizing Dose Responses of Forward Body Bias Ultra-Thin Body and Buried Oxide FD-SOI Transistors | 期刊论文 | Zheng Qiwen;Cui Jiangwei;Xu Liewei;Ning Bingxu;Zhao Kai;Shen Mingjie;Yu Xuefeng;Lu Wu;He Chengfa;Ren Diyuan;Guo Qi |
| 19 | Effects of total ionizing dose on single event effect sensitivity of FRAMs | 期刊论文 | Qinggang Ji;Jie Liu;Dongqing Li;Tianqi Liu;Bing Ye;Peixiong Zhao;Youmei Sun |
| 20 | Using a Temperature-Switching Approach to Evaluate Low-Dose-Rate Ionizing Radiation Effects on SET in Linear Bipolar Circuits | 期刊论文 | Yao Shuai;Lu Wu;Yu Xin;Guo Qi;He Chengfa;Li Xiaolong;Wang Xin;Liu Mohan;Sun Jing;Wei Xinyu;Chang Yaodong |
| 21 | Total Ionizing Dose Influence on the Single-Event Multiple-Cell Upsets in 65-nm 6-T SRAM | 期刊论文 | Zheng Qiwen;Cui Jiangwei;Lu Wu;Guo Hongxia;Liu Jie;Yu Xuefeng;Wang Liang;Liu Jiaqi;He Chengfa;Ren Diyuan;Yue Suge;Zhao Yuanfu;Guo Qi |
| 22 | Hot-carrier effect on TID irradiated shortchannel UTTB FD-SOI n-MOSFETs | 会议论文 | Jiangwei Cui;Qiwen Zheng;Bingxu Ning;Xuefeng Yu;Kai Zhao;Ying Wei;Wu Lu;Chengfa He;Diyuan Ren;Fang Yu;Liewei Xu;Qi Guo |
| 23 | Temperature-Switching During Irradiation as a Test for ELDRS in Linear Bipolar Devices | 期刊论文 | Li Xiaolong;Lu Wu;Guo Qi;Fleetwood Daniel M;He Chengfa;Wang Xin;Yu Xin;Sun Jing;Liu Mohan;Yao Shuai |
| 24 | 变温辐照对双极电压比较器LM2903在不同偏置状态下的单粒子瞬态影响 | 期刊论文 | 姚帅;陆妩;于新;李小龙;王信;刘默寒;孙静;常耀东;席善学;何承发;郭旗 |
| 25 | Bias Dependence of Radiation-Induced Narrow-Width Channel Effects in 65 nm NMOSFETs | 期刊论文 | Zheng Qi Wen;Cui Jiang Wei;Wei Ying;Yu Xue Feng;Lu Wu;Ren Diyuan;Guo Qi |
| 26 | 一种总剂量辐照对PMOSFET负偏压温度不稳定性影响的试验方法 | 专利 | 崔江维;郑齐文;魏莹;孙静;余学峰;郭旗;陆妩;何承发;任迪远 |
| 27 | 一种基于SOI结构的电离总剂量探测系统及方法 | 专利 | 孙静;郭旗;施炜雷;于新;何承发;余学峰;陆妩 |
| 28 | 高能~(56)Fe离子入射屏蔽材料的次级粒子模拟分析 | 期刊论文 | 荀明珠;何承发;陆妩;郭旗;孙静;刘默寒;曾骏哲;王信 |
| 29 | Anomalous annealing of floating gate errors due to heavy ion irradiation | 期刊论文 | Yin Yanan;Liu Jie;Sun Youmei;Hou Mingdong;Liu Tianqi;Ye Bing;Ji Qinggang;Luo Jie;Zhao Peixiong |
| 30 | 双极器件ELDRS效应研究进展 | 期刊论文 | 陆妩;李小龙;于新;王信;刘默寒;姚帅;常耀东 |
| 31 | Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories | 期刊论文 | Yanan Yin;Jie Liu;Tianqi Liu;Bing Ye;Qinggang Ji;Youmei Sun;Xinjie Zhou |
| 32 | 体效应对超深亚微米SOI器件总剂量效应的影响 | 期刊论文 | 席善学;陆妩;郑齐文;崔江维;魏莹;姚帅;赵京昊;郭旗 |
| 33 | 一种基于PMOS剂量计的多点测量方法 | 专利 | 孙静;郭旗;陆妩;余学峰;何承发;施炜雷;郑齐文;荀明珠;刘海涛 |
| 34 | Synergistic effect of enhanced low-dose-rate sensitivity and single event transient in bipolar voltage comparator LM139 | 期刊论文 | Yao Shuai;Lu Wu;Yu Xin;Wang Xin;Li Xiaolong;Liu Mohan;Sun Jing;Wei XinYu;Chang YaoDong;Guo Qi;He ChengFa |
| 35 | 双极器件ELDRS效应研究进展 | 期刊论文 | 陆妩;李小龙;于新;王信;刘默寒;姚帅;常耀东 |
查看更多信息请先登录或注册
