AlGaN/GaN HFET极化散射效应与外界静电场耦合作用机理研究
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | Study of Drain Access Resistance in Saturation Region of AlGaN/GaN Heterostructure Field-Effect Transistors | 期刊论文 | Ming Yang;Zhiliang Gao;Xinguang Su;Yuanyuan Wang;Yanhui Han;Xu Tang;Ben Li;Jihao He;Jun Liu;Ruojue Wang;Xiao Liu;Fei Mei;Lei Wang;Li Zhou;Wei Song;Yingqian Liu;Fayu Wan;Zhengang Cui;Bin Liu |
2 | 氮化镓器件特性的调制方法和结构 | 专利 | 杨铭;季启政;袁亚飞;高志良;梅高峰;张宇;冯娜;韩炎晖 |
3 | Study on the electron mobility related with ohmic contact width in AlGaN/GaN HEMTs | 期刊论文 | Ming Yang;Qizheng Ji;Xinguang Su;Weihong Zhang;Yuanyuan Wang;Lei Wang;Xiaofeng Hu;Qingyun Yuan;Peiyuan Feng;Yang Liu |
4 | 一种静电电荷量传感器标定装置及方法 | 专利 | 杨铭;袁亚飞;季启政;高志良;冯娜;张宇;李高峰;路子威 |
5 | Drain Schottky contact influence on low-field transport characteristic of AlGaN/GaN heterostructure field-effect transistors | 期刊论文 | Ming Yang;Qizheng Ji;Yuanyuan Wang;Xiaofeng Hu;Qingyun Yuan;Xiaoning Liu;Jihao He;Ruojue Wang;Li Zhou;Jingbo Xiao;Fei Mei;Xiao Liu;Zhengyu Wang;Chao Zhang;Jiapeng Wu;Yujing Wu;Yingqian Liu;Zhengang Cui |
6 | 一种光路互易的集成BGO晶体光波导闭环电场检测系统 | 专利 | 陈秋荻;杨铭;胡煌;张宇;王瑾;龙丹;韩炎晖 |