AlGaN基深紫外雪崩光电二极管的应力-位错-极化协同调控物理机制研究
11604124
2016
A2002.凝聚态物质力热光电性质
杨国锋
青年科学基金项目
副教授
江南大学
24万元
深紫外;极化场;AlGaN;雪崩光电二极管;异质结
2017-01-01到2019-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Magnetic polaritons enhanced absorption of phosphorene in the near-infrared and visible region | 期刊论文 | Wang Jin;Yang Guofeng;Ye Xuanchao;Sun Rui;Yao Chujun |
| 2 | Chemical vapor deposition growth of vertical MoS2 nanosheets on p‑GaN nanorods for photodetector application | 期刊论文 | Guofeng Yang;Yan Gu;Pengfei Yan;Jin Wang;Junjun Xue;Xiumei Zhang;Naiyan Lu;Guoqing Chen |
| 3 | A theoretical study on the metal contacts of monolayer gallium nitride (GaN) | 期刊论文 | Sun Rui;Yang Guofeng;Wang Fuxue;Chu Guangyong;Lu Naiyan;Shen Xiaowen |
| 4 | Magnetic polariton enhanced broadband absorption and photoresponse of monolayer MoS2based on normal and anomalous metallic gratings | 期刊论文 | Lu Yanan;Yang Guofeng;Xue Junjun;Wang Jin;Zhang Xiumei;Yan Xiaomi;Hua Bin |
| 5 | Temperature-Dependent Efficiency Droop in GaN-Based Blue LEDs | 期刊论文 | Zhao Linna;Yan Dawei;Zhang Zihui;Hua Bin;Yang Guofeng;Cao Yanrong;Zhang En Xia;Gu Xiaofeng;Fleetwood Daniel M. |
| 6 | 新型高光效GaN基LED倒装芯片关键技术及应用 | 奖励 | 杨国锋;华斌;陆乃彦;汪金;陈国庆;张秀梅;闫晓密;张秀敏 |
| 7 | Analysis of High-Temperature Carrier Transport Mechanisms for High Al-Content Al0.6Ga0.4N MSM Photodetectors | 期刊论文 | Yan Gu;Guofeng Yang;Aaron Danner;Dawei Yan;Naiyan Lu;Xiumei Zhang;Feng Xie;Yueke Wang;Bin Hua;Xianfeng Ni;Qian Fan;Xing Gu;Guoqing Chen |
| 8 | Tunneling-Hopping Transport Model for Reverse Leakage Current in InGaN/GaN Blue Light-Emitting Diodes | 期刊论文 | Zhao Linna;Chen Leilei;Yu Guohao;Yan Dawei;Yang Guofeng;Gu Xiaofeng;Liu Bin;Lu Hai |
| 9 | 选择外延生长微环型InGaN/GaN白光量子阱 | 奖励 | 杨国锋;高淑梅;陈国庆 |
| 10 | GaN-based Schottky barrier ultraviolet photodetectors with graded doping on patterned sapphire substrates | 期刊论文 | Mou Wenjie;Zhao Linna;Chen Leilei;Yan Dawei;Ma Huarong;Yang Guofeng;Gu Xiaofeng |
| 11 | 一种应用石墨烯电极在GaN自支撑衬底上制备AlGaN肖特基日盲紫外探测器的方法 | 专利 | 杨国锋;陆亚男;姚楚君;汪金;孙锐;钱维莹 |
| 12 | High-performance AlGaN-based solar-blind avalanche photodiodes with dual-periodic III-nitride distributed Bragg reflectors | 期刊论文 | Yao Chujun;Ye Xuanchao;Sun Rui;Yang Guofeng;Wang Jin;Lu Yanan;Yan Pengfei;Cao Jintao;Gao Shumei |
| 13 | The Electronic and Optical Properties of InSe-GeTe Heterobilayer via Applying Biaxial Strain | 期刊论文 | Guofeng Yang;Rui Sun;Yan Gu;Feng Xie;Yu Ding;Xiumei Zhang;Yueke Wang;Bin Hua;Xianfeng Ni;Qian Fan;Xing Gu |
| 14 | A Comprehensive Study of Reverse Current Degradation Mechanisms in Au/Ni/n-GaN Schottky Diodes | 期刊论文 | Ren Jian;Mou Wenjie;Zhao Linna;Yan Dawei;Yu Zhiguo;Yang Guofeng;Xiao Shaoqing;Gu Xiaofeng |
| 15 | Epitaxial growth and interfacial property of monolayer MoS2on gallium nitride | 期刊论文 | Yan Pengfei;Tian Qianqian;Yang Guofeng;Weng Yuyan;Zhang Yixin;Wang Jin;Xie Feng;Lu Naiyan |
| 16 | 中国光学重要成果 | 奖励 | 杨国锋;高淑梅;陈国庆 |
| 17 | 一种GaN基无荧光粉自发白光LED芯片结构及其制备方法 | 专利 | 杨国锋;汪金;张秀梅;谢峰;钱维莹 |
| 18 | AlGaN solar-blind avalanche photodiodes with AlInN/AlGaN distributed Bragg reflectors | 期刊论文 | Yao Chujun;Ye Xuanchao;Sun Rui;Yang Guofeng;Wang Jin;Lu Yanan;Yan Pengfei;Cao Jintao |
| 19 | Frequency response and design consideration of GaN SAM avalanche photodiodes | 期刊论文 | Xie Feng;Yang Guofeng;Zhou Dong;Lu Hai;Wang Guosheng |
| 20 | 一种侧壁和底部具有金属反射层的LED芯片结构及其制作方法 | 专利 | 杨国锋;汪金;张秀梅;钱维莹 |
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