AlGaN/AlN/GaN电力电子器件中极化库仑场散射机制研究

61504127
2015
F0405.半导体器件物理
栾崇彪
青年科学基金项目
副研究员
中国工程物理研究院流体物理研究所
21万元
电容-电压特性;亚阈值特性;界面特性
2016-01-01到2018-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
查看更多信息请先登录或注册
查看更多信息请先登录或注册
查看更多信息请先登录或注册
重置
序号 标题 类型 作者
1 Research on a Novel High-Power Semi-Insulating GaAs Photoconductive Semiconductor Switch 期刊论文 Luan Chongbiao;Feng Yuanwei;Huang Yupeng;Li Hongtao;Li Xiqin
2 Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors 期刊论文 Cui Peng;Lin Zhaojun;Liu Yan;Fu Chen;Liu Huan;Cheng Aijie;Lv Yuanjie;Feng Zhihong;Luan Chongbiao;Lin ZJ
3 Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs 期刊论文 Cui Peng;Lin Zhaojun;Yang Ming;Liu Yan;Fu Chen;Liu Huan;Cheng Aijie;Lin Wei;Lv Yuanjie;Luan Chongbiao;Lin ZJ
4 一种带有高反膜和增透膜的低导通电阻GaAs光导开关 专利 栾崇彪;肖金水;王波;黄宇鹏;李洪涛;陈敏;谢卫平
5 一种量子阱结构的大功率半绝缘AlGaAs/GaAs光导开关 专利 栾崇彪;肖金水;王波;黄宇鹏;李洪涛;谢卫平
6 Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors 期刊论文 Liu Huan;Cheng Aijie;Lin Zhaojun;Cui Peng;Liu Yan;Fu Chen;Lv Yuanjie;Feng Zhihong;Luan Chongbiao;Cheng AJ
7 Study on the high-power semi-insulating GaAs PCSS with quantum well structure 期刊论文 Luan Chongbiao;Wang Bo;Huang Yupeng;Li Xiqin;Li Hongtao;Xiao Jinshui
8 Determination of the strain distribution for the Si3N4 passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Fu Chen;Lin Zhaojun;Liu Yan;Cui Peng;Lv Yuanjie;Zhou Yang;Dai Gang;Luan Chongbiao;Lin ZJ
9 一种用于高功率光导开关的电子氟化液散热装置 专利 肖金水;栾崇彪;黄宇鹏;王波;李玺钦;莫腾富;李洪涛;谢卫平
10 A New Phenomenon in Semi-Insulating 4H-SiC Photoconductive Semiconductor Switches 期刊论文 Chongbiao Luan
11 高储能密度脉冲电容器及固态脉冲形成线试验研究 期刊论文 栾崇彪;李玺钦;冯元伟;张庆猛;李洪涛;黄宇鹏
12 The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation 期刊论文 Fu Chen;Lin Zhaojun;Cui Peng;Lv Yuanjie;Zhou Yang;Dai Gang;Luan Chongbiao;Liu Huan;Cheng Aijie;Lin ZJ
13 A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文 Fu Chen;Lin Zhaojun;Cui Peng;Lv Yuanjie;Zhou Yang;Dai Gang;Luan Chongbiao;Liu Huan;Cheng Aijie;Lin ZJ
查看更多信息请先登录或注册

相关项目

趋势报告

经验分享