电应力下沟槽型SiC-MOSFET退化机理及表征模型研究
62004037
2020
F0404.半导体电子器件与集成
魏家行
青年科学基金项目
副研究员
东南大学
24万元
表征模型;退化机理;碳化硅金属氧化物半导体场效应晶体管;电应力;沟槽型
2021-01-01到2023-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Degradation Investigations on Asymmetric Trench SiC Power MOSFETs Under Repetitive Unclamped Inductive Switching Stress | 会议论文 | Hao Fu;Jiaxing Wei;Xiaowen Yan;Hangbo Zhao;Zhaoxiang Wei;Hua Zhou;Weifeng Sun;Siyang Liu |
| 2 | A Split-Gate Power MOSFET Obtaining Ultra-Wide SOA Based on Time-Shared and Partitioned Conduction Gate Control | 期刊论文 | Tuanzhuang Wu;Jiaxing Wei;Xin Tong;Tianyi He;Sheng Li;Long Zhang;Siyang Liu;Desheng Ding;Weifeng Sun |
| 3 | 一种混合石墨烯电极的半导体器件及其制造方法 | 专利 | 魏家行;徐航;隗兆祥;付浩;薛璐洁;王恒德;刘斯扬;孙伟锋;时龙兴 |
| 4 | 一种低导通电阻的功率器件及制造方法 | 专利 | 魏家行;王晨露;付浩;宋兆旭;刘斯扬;孙伟锋;时龙兴 |
| 5 | Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature | 期刊论文 | Chi Zhang;Sheng Li;Weihao Lu;Siyang Liu;Yanfeng Ma;Jingwen Huang;Jiaxing Wei;Long Zhang;Weifeng Sun |
| 6 | 一种隧穿功率器件及其制造方法 | 专利 | 魏家行;朱旭东;付浩;隗兆祥;刘斯扬;孙伟锋;时龙兴 |
| 7 | Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example | 期刊论文 | Zhaoxiang Wei;Hao Fu;Xiaowen Yan;Sheng Li;Long Zhang;Jiaxing Wei;Siyang Liu;Weifeng Sun;Weili Wu;Song Bai |
| 8 | 低回滞电压的逆导型绝缘栅双极型晶体管及其制备工艺 | 专利 | 刘斯扬;李仁伟;吴团庄;魏家行;孙伟锋;时龙兴 |
| 9 | 一种具有低续流损耗的功率半导体器件及其制造方法 | 专利 | 刘斯扬;孙佳萌;隗兆祥;魏家行;孙伟锋;时龙兴 |
| 10 | 先进智能功率全集成工艺关键技术与应用 | 奖励 | 林峰;李春旭;吴汪然;陈淑娴;魏家行;金宏峰;金华俊;刘新新;马春霞 |
| 11 | 一种低隧穿泄漏电流的功率器件及其制造方法 | 专利 | 孙伟锋;曹钧厚;付浩;魏家行;刘斯扬;时龙兴 |
| 12 | Surge Current Failure Mechanism of 650V Double-Trench SiC MOSFETs | 会议论文 | Junhou Cao;Jiaxing Wei;Zhaoxiang Wei;Hangbo Zhao;Hao Fu;Siyang Liu;Weifeng Sun |
| 13 | Investigations on Unclamped-Inductive-Switching Behaviors of p-GaN HEMTs at Cryogenic Temperature | 会议论文 | Chi Zhang;Weihao Lu;Sheng Li;Siyang Liu;Yanfeng Ma;Jingwen Huang;Long Zhang;Jiaxing Wei;Weifeng Sun |
| 14 | Quasisaturation Effect and Optimization for 4H-SiC Trench MOSFET With P+ Shielding Region | 期刊论文 | Hao Fu;Jiaxing Wei;Zhaoxiang Wei;Siyang Liu;Lihua Ni;Zhuo Yang;Weifeng Sun |
| 15 | Theory and Design of Novel Power Poly-Si/SiC Heterojunction Tunneling Transistor Structure | 期刊论文 | Hao Fu;Jiaxing Wei;Zhaoxiang Wei;Sheng Li;Long Zhang;Song Bai;Runhua Huang;Xiaolei Yang;Siyang Liu;Weifeng Sun |
| 16 | 基于异质结的高功率密度隧穿半导体器件及其制造工艺 | 专利 | 魏家行;付浩;王恒德;隗兆祥;刘斯扬;孙伟锋;时龙兴 |
| 17 | Single Pulse Short-Circuit Failure Mechanism of 1200V Asymmetric Trench SiC MOSFETs | 会议论文 | Zhaoxiang Wei;Jiaxing Wei;Xiaowen Yan;Hua Zhou;Hao Fu;Siyang Liu;Weifeng Sun |
| 18 | Review on the Reliability Mechanisms of SiC Power MOSFETs: A Comparison Between Planar-Gate and Trench-Gate Structures | 期刊论文 | Jiaxing Wei;Zhaoxiang Wei;Hao Fu;Junhou Cao;Tuanzhuang Wu;Jiameng Sun;Xudong Zhu;Sheng Li;Long Zhang;Siyang Liu;Weifeng Sun |
| 19 | 1200V 4H-SiC trench MOSFET with superior figure of merit and suppressed quasi-saturation effect | 期刊论文 | Hao Fu;Zhaoxiang Wei;Siyang Liu;Jiaxing Wei;Hang Xu;Lihua Ni;Zhuo Yang;Weifeng Sun |
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