Si基应变多子沟道TFET研究

61704130
2017
F0408.新型信息器件
王斌
青年科学基金项目
讲师
西安电子科技大学
24万元
多子沟道;隧穿场效应晶体管;Si基应变材料;开态电流
2018-01-01到2020-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy 期刊论文 Yang Jiayin;Hu Huiyong;Miao Yuanhao;Wang Bin;Wang Wei;Su Han;Ma Yubo
2 Simulation Study of Device Physics and Design of GeOI TFET with PNN structure and buried layer for high performance 期刊论文 Wang Bin;Hu Sheng;Feng Yue;Li Peng;Hu Huiyong;Shu Bin
3 一种具有埋层结构的新型低阈值JLFET器件及其制备方法 专利 王斌;罗昭;陈睿;蔺孝堃;樊碧莹;胡辉勇
4 一种具有埋层结构的新型大电流n型TFET器件及其制备方法 专利 王斌;陈睿;罗昭;蔺孝堃;陈瑶;胡辉勇
5 Effects of rapid thermal annealing on crystallinity and Sn surface segregation of Ge1-xSnx films on Si (100) and Si (111) 期刊论文 Miao Yuan-Hao;Hu Hui-Yong;Song Jian-Jun;Xuan Rong-Xi;Zhang He-Ming
6 Characterization of crystalline GeSn layer on tensile-strained Ge buffer deposited by magnetron sputtering 期刊论文 Miao Yuanhao;Wang Yibo;Hu Huiyong;Liu Xiangyu;Su Han;Zhang Jing;Yang Jiayin;Tang Zhaohuan;Wu Xue;Song Jianjun;Xuan Rongxi;Zhang Heming
7 Design and theoretical calculation of novel GeSn fully depleted n-tunneling FET with quantum confinement model for suppression on GIDL effect 期刊论文 Liu Xiangyu;Hu Huiyong;Wang Meng;Miao Yuanhao;Han Genquan;Wang Bin
8 Evaluation of threading dislocation density of strained Ge epitaxial layer by high resolution x-ray diffraction 期刊论文 Miao Yuan Hao;Hu Hui Yong;Li Xin;Song Jian Jun;Xuan Rong Xi;Zhang He Ming
9 Enhancement of off-state characteristics in junctionless field effect transistor using a field plate 期刊论文 Wang Bin;Zhang He Ming;Hu Hui Yong;Shi Xiao Wei
10 Device physics and design of FD-SOI JLFET with step-gate-oxide structure to suppress GIDL effect 期刊论文 Wang Bin;Shi Xinlong;Zhang Yunfeng;Chen Yi;Hu Huiyong;Wang Liming
11 High-quality GeSn Layer with Sn Composition up to 7% Grown by Low-Temperature Magnetron Sputtering for Optoelectronic Application 期刊论文 Yang Jiayin;Hu Huiyong;Miao Yuanhao;Dong Linpeng;Wang Bin;Wang Wei;Su Han;Xuan Rongxi;Zhang Heming
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