高k栅介质/钝化层/InGaAs叠层结构设计、界面失稳调控及性能优化

51572002
2015
E0207.无机非金属半导体与信息功能材料
何刚
面上项目
教授
安徽大学
64万元
III-V族半导体;场效应晶体管;载流子迁移率;界面特性;高介电常数介质
2016-01-01到2019-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 Modulation of electrical properties and current conduction mechanism of HfAlO/Ge gate stack by ALD-derived Al2O3 passivation layer 期刊论文 He Gang;Li Wendong;Wei Hehe;Jiang Shanshan;Xiao DongQI;Jin Peng;Gao Juan
2 Interfacial modulation and electrical properties improvement of solution-processed ZrO2 gate dielectrics upon Gd incorporation 期刊论文 Xiao Dongqi;He Gang;Lv Jianguo;Wang Peihong;Liu Mao;Gao Juan;Jin Peng;Jiang Shanshan;Li Wendong;Sun Zhaoqi
3 Microstructure, wettability, optical and electrical properties of HfO2 thin films: Effect of oxygen partial pressure 期刊论文 Gao J.;He G.;Deng B.;Xiao D. Q.;Liu M.;Jin P.;Zheng C. Y.;Sun Z. Q.
4 Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter Y.C. 期刊论文 Zhang Yongchun;He Gang;Zhang Chong;Zhu Li;Yang Bing;Lin Qibing;Jiang xishun
5 Passivation of Ge surface treated with trimethylaluminum and investigation of electrical properties of HfTiO/Ge gate stacks 期刊论文 Gao Juan;He Gang;Xiao Dongqi;Jin Peng;Jiang Shanshan;Li Wendong;Liang Shuang;Zhu Li
6 Microstructure, optical, electrical properties, and leakage current transport mechanism of sol-gel-processed high-k HfO2 gate dielectrics 期刊论文 Jin Peng;He Gang;Xiao Dongqi;Gao Juan;Liu Mao;Lv Jianguo;Liu Yanmei;Zhang Miao;Wang Peihong;Sun Zhaoqi
7 Microstructure, optical and electrical properties of sputtered HfFiO high-k gate dielectric thin films 期刊论文 Jiang S. S.;He G.;Gao J.;Xiao D. Q.;Jin P.;Li W. D.;Lv J. G.;Liu M.;Liu Y. M.;Sun Z. Q.
8 Modulation of interfacial and electrical properties of ALD-derived HfAlO/Al2O3/Si gate stack by annealing temperature 期刊论文 Gao J;He G;Liu M;Lv J G;Sun Z Q;Zheng C Y;Jin P;Xiao D Q;Chen X S
9 Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文 Gao Juan;He Gang;Fang Zebo;Lv Jianguo;Liu Mao;Sun Zhaoqi
10 Baking-temperature-modulated optical and electrical properties of HfTiOx gate dielectrics via sol-gel method 期刊论文 Jin P.;He G.;Wang P. H.;Liu M.;Xiao D. Q.;Gao J.;Chen H. S.;Chen X. S.;Sun Z. Q.;Zhang M.;Lv J. G.;Liu Y. M.
11 Eco-Friendly Fully Water-Driven Metal–Oxide Thin Films and Their Applications in Transistors and Logic Circuits 期刊论文 Zhang Chong;He Gang;Yang Bing;Xia Yufeng;Zhang Yongchun
12 Modification of optical and electrical properties of sol-gel-derived TiO2-doped ZrO2 gate dielectrics by annealing temperature 期刊论文 Xiao D. Q.;He G.;Liu M.;Gao J.;Jin P.;Jiang S. S.;Li W. D.;Zhang M.;Liu Y. M.;Lv J. G.;Sun Z. Q.
13 Nitrogen-concentration modulated interfacial and electrical properties of sputtering-derived HfGdON gate dielectric 期刊论文 Ma Rui;Liu Mao;He Gang;Fang Ming;Shang Guoliang;Fei Guangtao;Zhang Lide
14 Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文 Jiang Shanshan;He Gang;Liang Shuang;Zhu Li;Li Wendong;Zheng Changyong;Lv Jianguo;Liu Mao
15 Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics 期刊论文 L. Zhu;G. He;J. G. Lv;E. Fortunato;R. Martins
16 Annealing temperature-dependent microstructure and optical and electrical properties of solution-derived Gd-doped ZrO2 high-k gate dielectrics 期刊论文 Zhu Li;He Gang;Sun Zhaoqi;Liu Mao;Jiang Shanshan;Liang Shuang;Li Wendong
17 Modification of electrical properties and carrier transportation mechanism of ALD-derived HfO2/Si gate stacks by Al2O3 incorporation 期刊论文 Gao Juan;He Gang;Sun Zhaoqi;Chen Hanshuang;Zheng Changyong;Jin Peng;Xiao Dongqi;Liu Mao
18 Annealing-induced evolution in interface stability and electrical performance of sputtering-driven rare-earth-based gate oxides 期刊论文 Wang Die;He Gang;Liang Shuang;Liu Mao
19 Annealing-temperature-modulated optical, electrical properties, and leakage current transport mechanism of sol–gel-processed high-k HfAlOx gate dielectrics 期刊论文 Jin Peng;He Gang;Fang Zebo;Liu Mao;Xiao Dongqi;Gao Juan;Jiang Shanshan;Li wendong;Sun Zhaoqi
20 Modulation of Band Offset in Sputtering-Derived MoS2/HfO2 Heterojunction by Gd Incorporation 期刊论文 Li Wendong;He Gang;Zheng Changyong;Xiao Dongqi;Jin Peng;Jiang Shanshan;Gao Juan;Lv Jianguo
21 Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics 期刊论文 Zheng C. Y.;He G.;Chen X. F.;Liu M.;Lv J. G.;Gao J.;Zhang J. W.;Xiao D. Q.;Jin P.;Jiang S. S.;Li W. D.;Sun Z. Q.
22 Modulation of the interfacial and electrical properties of atomic-layer-deposited Hf0.5Al0.5O/Si gate stacks using Al2O3 passivation layer with various thickness 期刊论文 Gao Jaun;He Gang;Wang Die;Liang Shuang
23 Comparative study on in situ surface cleaning effect of intrinsic oxide-covering GaAs surface using TMA precursor and Al2O3 buffer layer for HfGdO gate dielectrics 期刊论文 J. Gao;G. He;S. Liang;D. Wang;B. Yang
24 Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks 期刊论文 Liang Shuang;He Gang;Wang Die;Qiao Fen
25 Modulating the Interface Chemistry and Electrical Properties of Sputtering-Driven HfYO/GaAs Gate Stacks by ALD Pulse Cycles and Thermal Treatment 期刊论文 Liang Shuang;He Gang;Wang Die;Hao Lin;Zhang Miao;Cui Jingbiao
26 Annealing Temperature Dependent Electrical Properties and Leakage Current Transport Mechanisms in Atomic Layer Deposition-Derived Al2O3-Incorporated HfO2/Si Gate Stack 期刊论文 Gao Juan;He Gang;Zhang Jiwen;Chen Xuefei;Jin Peng;Xiao Dongqi;Liu Mao;Ma Rui;Sun Zhaoqi
27 Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics 期刊论文 Jiang Shanshan;He Gang;Fang Zebo;Wang Peihong;Liu Yanmei;Lv Jianguo;Liu Mao
28 Low-Voltage-Operating Transistors and Logic Circuits Based on a Water-Driven ZrGdOx Dielectric with Low-Cost ZnSnO 期刊论文 Yang Bing;He Gang;Zhu Li;Zhang Chong;Zhang Yongchun;Xia Yufeng;Fakhari Alam;Sun Zhaoqi
29 Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文 S. S. Jiang;G. He;M. Liu;L. Zhu;S. Liang;W. D. Li;Z. Q. Sun;M. L. Tian
30 Potential solution-induced HfAlO dielectrics and their applications in low-voltage-operating transistors and high-gain inverters 期刊论文 He Gang;Li Wendong;Sun Zhaoqi;Zhang Miao;Chen Xiaoshuang
31 Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor 期刊论文 Gao Juan;He Gang;Xiao Dongqi;Jiang Shanshan;Lv Jianguo;ChenG Chao;Sun Zhaoqi
32 Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文 He Gang;Zhang Jiwen;Sun Zhaoqi;Lv Jianguo;Chen Hanshuang;Liu Mao
33 Eco-Friendly, Water-Induced In(2)O(3 )Thin Films for High-Performance Thin-Film Transistors and Inverters 期刊论文 L. Zhu;G. He;Y. T. Long;B. Yang;J. G. Lv
34 Nontoxic, Eco-friendly Fully Water-Induced Ternary Zr-Gd-O Dielectric for High-Performance Transistors and Unipolar Inverters 期刊论文 L. Zhu;G. He;W. D. Li;B. Yang;E. Fortunato;R. Martins
35 Interface chemistry and leakage current mechanism of HfGdON/Ge gate stack modulated by ALD-driven interlayer 期刊论文 He Gang;Wang Die;Ma Rui;Liu Mao;Cui Jingbiao
36 Solution-Processed DyOx for Aging Diffusion ZnSnO Transistors and Applications in Low-Voltage-Operating Logic Circuits 期刊论文 Yang Bing;He Gang;Zhang Yongchun;Zhang Chong;Xia Yufeng;Alam Fakhari;Cui Jingbiao
37 Water-Derived All-Oxide Thin-Film Transistors With ZrAlOx Gate Dielectrics and Exploration in Digital Circuits 期刊论文 Zhu Li;He Gang;Zhang Chong;Yang Bing;Xia Yufeng;Fakhari Alam;Zhang Yongchun
38 Comparative passivation effect of ALD-driven HfO2 and Al2O3 buffer layers on the interface chemistry and electrical characteristics of Dy-based gate dielectrics 期刊论文 D. Wang;G. He;L. Hao;J. Gao;M. Zhang
39 Interface chemistry and electronic structure of ALD-derived HfAlO/Ge gate stacks revealed by X-ray photoelectron spectroscopy 期刊论文 He Gang;Jiang shanshan;Li Wendong;Zheng Changyong;He Huaxin;Li Jing;Sun Zhaoqi;Liu Yanmei;Liu Mao
40 Modulation of the microstructure, optical, and electrical properties of HfYO gate dielectrics by annealing temperature 期刊论文 Liang Shuang;He Gang;Zhu Li;Zheng Changyong;Gao Juan;Wang Die;Zhang Chong;Liu Mao
41 Solution-processed HfGdO gate dielectric thin films for CMOS application: Effect of annealing temperature 期刊论文 Li Wendong;He Gang;Zheng Changyong;Liang Shuang;Zhu Li;Jiang Shanshan
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