GaN功率IC高频容性耦合串扰模型与逆向场解耦新结构

62004030
2020
F0404.半导体电子器件与集成
孙瑞泽
青年科学基金项目
副教授
电子科技大学
24万元
氮化镓;功率集成电路;串扰;逆向场解耦;容性耦合
2021-01-01到2023-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 Optimizing breakdown voltage and on-state resistance by modulating the barrier height along 2DEG channel for power p-GaN HEMTs 期刊论文 Yajie Xin;Wanjun Chen;Ruize Sun;Chao Liu;Yun Xia;Fangzhou Wang;Xiaochuan Deng;Zhaoji Li;Bo Zhang
2 An Ultralow Turn-On GaN Lateral Field-Effect Rectifier With Schottky-MIS Cascode Anode 期刊论文 Fangzhou Wang;Zeheng Wang;Wanjun Chen;Ruize Sun;Wenjun Xu;Yang Wang;Haiqiang Jia;Bo Zhang
3 Degradation Behavior and Mechanism of GaN HEMTs With P-Type Gate in the Third Quadrant Under Repetitive Surge Current Stress 期刊论文 Xiaoming Wang;Wanjun Chen;Ruize Sun;Chao Liu;Yun Xia;Yajie Xin;Xiaorui Xu;Fangzhou Wang;Xinghuan Chen;Yiqiang Chen;Bo Zhang
4 A High Reverse Breakdown Voltage p-GaN Gate HEMT with Field Control Drain 期刊论文 Pengcheng Xing;Fangzhou Wang;Pan Luo;Ruize Sun;Yijun Shi;Xinbing Xu;Yiqiang Chen;Wanjun Chen
5 Reverse Blocking p-GaN Gate HEMTs With Multicolumn p-GaN/Schottky Alternate-Island Drain 期刊论文 Sun Ruize;Luo Pan;Wang Fangzhou;Liu Chao;Xu Wenjun;Wang Yang;Ding Guojian;Yang Haojun;Feng Qi;Chen Wanjun;Zhang Bo
6 Control Methodology and Experimental Demonstration of a 100-W 1-MHz GaN Buck Power Factor Correction (PFC) Converter 会议论文 Ruize Sun;Pengcheng Xing;Lidong Duan;Chao Liu;Wanjun Chen;Bo Zhang
7 一种全氮化镓集成二级关断过流保护电路 专利 孙瑞泽;程峥;罗攀;陈万军;张波
8 Reverse Blocking GaN High Electron Mobility Transistors with Stepped P-GaN Drain 期刊论文 Zhuocheng Wang;Ruize Sun;Zhuo Wang;Bo Zhang
9 On the Abnormal Reduction and Recovery of Dynamic R ON Under UIS Stress in Schottky p-GaN Gate HEMTs 期刊论文 Chao Liu;Xinghuan Chen;Ruize Sun;Jingxue Lai;Wanjun Chen;Yajie Xin;Fangzhou Wang;Xiaoming Wang;Zhaoji Li;Bo Zhang
10 一种具有隔离结构的氮化镓集成电路 专利 孙瑞泽;罗攀;刘超;陈万军
11 Simulation Study of a High Gate-to-Source ESD Robustness Power p-GaN HEMT With Self-Triggered Discharging Channel 期刊论文 Yajie Xin;Wanjun Chen;Ruize Sun;Fangzhou Wang;Xiaochuan Deng;Zhaoji Li;Bo Zhang
12 Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature 期刊论文 Yajie Xin;Wanjun Chen;Ruize Sun;Xiaochuan Deng;Zhaoji Li;Bo Zhang
13 一种逆阻型氮化镓高电子迁移率晶体管 专利 孙瑞泽;罗攀;王方洲;刘超;陈万军
14 一种具有台阶式P型GaN漏极结构的逆阻型HEMT 专利 孙瑞泽;王茁成;罗攀;王方洲;刘超;陈万军
15 Analysis of Energy Loss in GaN E-Mode Devices Under UIS Stresses 期刊论文 Sun Ruize;Lai Jingxue;Liu Chao;Chen Wanjun;Chen Yiqiang;Li Zhaoji;Zhang Bo
16 High-performance Reverse Blocking p-GaN HEMTs with Multi-column p-GaN/Schottky Alternate-island Drain 会议论文 Ruize Sun;Fangzhou Wang;Pan Luo;Wenjun Xu;Yang Wang;Chao Liu;Wanjun Chen;Bo Zhang
17 A low turn-on voltage AlGaN/GaN lateral field-effect rectifier compatible with p-GaN gate HEMT technology 期刊论文 Fangzhou Wang;Wanjun Chen;Zeheng Wang;Yuan Wang;Jingxue Lai;Ruize Sun;Qi Zhou;Bo Zhang
18 Dynamic Trapping Related Hysteresis of Effective Output Capacitance in Overvoltage Transients of GaN E-mode Devices 会议论文 Ruize Sun;Jingxue Lai;Chao Liu;Wanjun Chen;Yiqiang Chen;Xingpeng Liu;Bo Zhang
19 REVERSE BLOCKING GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTOR 专利 Ruize SUN;Wangjun CHEN;Chao LIU;Pan LUO;Fangzhou WANG
20 Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism 期刊论文 Fangzhou Wang;Wanjun Chen;Xiaorui Xu;Ruize Sun;Zeheng Wang;Yun Xia;Yajie Xin;Chao Liu;Qi Zhou;Bo Zhang
21 Experimental Demonstration of an Integrated Bidirectional Gate ESD Protection Structure for p-GaN Power HEMTs 期刊论文 Yajie Xin;Wanjun Chen;Ruize Sun;Fangzhou Wang;Chao Liu;Xiaochuan Deng;Zhaoji Li;Bo Zhang
22 一种应用于集成电路高低压隔离的反向电场耦合隔离结构 专利 孙瑞泽;赖静雪;刘超;陈万军
23 一种GaN功率器件多芯片堆叠封装结构 专利 孙瑞泽;王茁成;潘慈;王晨曦;陈万军;张波
24 Crosstalk Suppression in Monolithic GaN Devices Based on Inverted E-Field Decoupling 期刊论文 Sun Ruize;Lai Jingxue;Chen Wanjun;Liu Chao;Wang Fangzhou;Zhou Jianjun;Li Zhaoji;Zhang Bo
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