高温SiC DMOS器件电热物理场耦合模型与加固新结构研究
61674026
2016
F0404.半导体电子器件与集成
邓小川
面上项目
教授
电子科技大学
60万元
热可靠性;非箝位感性开关失效;DMOS;雪崩电流;碳化硅;电热耦合模型
2017-01-01到2020-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | A SiC Power MOSFET Loss Model Suitable for High-Frequency Applications | 期刊论文 | Li Xuan;Jiang Junning;Huang Alex Q.;Guo Suxuan;Deng Xiaochuan;Zhang Bo;She Xu |
| 2 | Design, Fabrication and Characterization of Ultra-High Voltage 4H-SiC MOSFET Transistors | 会议论文 | Deng Xiao-Chuan;Tan Ben;Li Jun-Tao;Li Xuan;Zhang Bo |
| 3 | Experimental study and characterization of an ultrahigh-voltage Ni/4H–SiC junction barrier Schottky rectifier with near ideal performances | 期刊论文 | Deng Xiaochuan;Yang Liping;Wen Yi;Li Xuan;Yang Fei;Wu Hao;Cao Houhua;Li Juntao;Chen Wanjun;Zhang Bo |
| 4 | Design and simulation on improving the reliability of gate oxide in SiC CDMOSFET | 期刊论文 | Wen Yi;Zhu Hao;Yang Wenchi;Deng Xiaochuan;Li Xuan;Chen Wanjun;Zhang Bo |
| 5 | A robust and area-efficient guard ring edge termination technique for 4H-SiC power MOSFETs | 期刊论文 | Deng Xiaochuan;Guo Yuanxu;Dai Tianxiang;Li Chengzhan;Chen Ximing;Chen Wanjun;Zhang Yourun;Zhang Bo |
| 6 | 一种沟槽型碳化硅MOSFET器件及其制备方法 | 专利 | 邓小川;杨文驰;柏松;李轩;高蜀峰;张波 |
| 7 | Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges | 期刊论文 | Deng Xiaochuan;Gao Shufeng;Tan Ben;Li Juntao;Li Xuan;Li Chengzhan;Chen Wanjun;Li Zhaoji;Zhang Bo |
| 8 | Switching Loss Model of SiC MOSFET Promoting High Frequency Applications | 会议论文 | Li Xuan;Li Xu;Yang Liping;Huang Alex Q.;Liu Pengkun;Deng Xiaochuan;Zhang Bo |
| 9 | Achieving Zero Switching Loss in Silicon Carbide MOSFET | 期刊论文 | Li Xuan;Li Xu;Liu Pengkun;Guo Suxuan;Zhan Liqi;Huang Alex Q;Deng Xiaochuan;Zhang Bo |
| 10 | 一种沟槽型碳化硅MOSFET器件及其制备方法 | 专利 | 邓小川;高蜀峰;柏松;杨丽萍;李轩;张波 |
| 11 | A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window | 期刊论文 | Deng Xiaochuan;Li Lijun;Wu Jia;Li Chengzhan;Chen Wanjun;Li Juntao;Li Zhaoji;Zhang Bo |
| 12 | Investigation and Failure Mode of Asymmetric and Double Trench SiC mosfets Under Avalanche Conditions | 期刊论文 | Xiaochuan Deng;Hao Zhu;Xuan Li;Xing Tong;Shufeng Gao;Yi Wen;Song Bai;Wanjun Chen;Kun Zhou;Bo Zhang |
| 13 | SiC Trench MOSFET With Integrated Self-Assembled Three-Level Protection Schottky Barrier Diode | 期刊论文 | Li Xuan;Tong Xing;Huang Alex Q.;Tao Hong;Zhou Kun;Jiang Yifan;Jiang Junning;Deng Xiaochuan;She Xu;Zhang Bo;Zhang Yourun;Tian Qi |
| 14 | Impact of Termination Region on Switching Loss for SiC MOSFET | 期刊论文 | Li Xuan;Tan Ben;Huang Alex Q.;Zhang Bo;Zhang Yumeng;Deng Xiaochuan;Li Zhaoji;She Xu;Wang Fangzhou;Huang Xing |
| 15 | 槽栅型碳化硅MOSFET器件及制备方法 | 专利 | 邓小川;万淑燕;柏松;李轩;高蜀峰;张波 |
| 16 | 高电流密度SiC电力电子器件关键技术及应用 | 奖励 | 刘新宇;柏松;刘可安;张波;邓小川;白云;黄润华;李诚瞻;汤益丹;王盛凯 |
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