InGaN基量子点/量子阱复合结构的外延生长及光学性质的研究

61504090
2015
F0401.半导体材料
卢太平
青年科学基金项目
讲师
太原理工大学
20万元
有机金属化学气相沉积;发光二极管;铟镓氮;量子阱;量子点
2016-01-01到2018-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 一种高发光效率氮化镓基LED外延片的制备方法 专利 卢太平;朱亚丹;许并社
2 Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode 期刊论文 Dong Hailiang;Sun Jing;Ma Shufang;Liang Jian;Lu Taiping;Jia Zhigang;Liu Xuguang;Xu Bingshe
3 Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells 期刊论文 Dong Hailiang;Sun Jing;Ma Shufang;Liang Jian;Lu Taiping;Liu Xuguang;Xu Bingshe
4 Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode 期刊论文 Dan Han;Shufang Ma;Zhigang Jia;Wei Jia;Peizhi Liu;Hailiang Dong;Lin Shang;Aiqin Zhang;Guangmei Zhai;Xuemin Li;Xuguang Liu;Bingshe Xu
5 一种GaN基LED外延结构及其制备方法 专利 卢太平;朱亚丹;赵广洲;许并社
6 Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property 期刊论文 Hailiang Dong;Jing Sun;Shufang Ma;Jiang Liang;Zhigang Jia;Xuguang Liu;Bingshe Xu
7 Enhancement of carrier localization effect and internal quantum efficiency through In-rich InGaN quantum dots 期刊论文 Jianjie Liu;Zhigang Jia;Shufang Ma;Hailiang Dong;Guangmei Zhai;Bingshe Xu
8 Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers 期刊论文 Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe
9 The morphologies and optical properties of three-dimensional GaN nano-cone arrays 期刊论文 Wang Haotian;Zhai Guangmei;Shang Lin;Ma Shufang;Jia Wei;Jia Zhigang;Liang Jian;Li Xuemin;Xu Bingshe
10 GaN衬底的腐蚀程度对ZnO纳米棒阵列光学性能的调控 期刊论文 庞泽鹏;梅伏洪;乔建东;尚林;余春燕;许并社
11 一种高发光效率氮化镓基LED外延片的制备方法 专利 卢太平;朱亚丹;赵广洲;许并社
12 三维生长温度对非故意掺杂GaN外延层性能的影响 期刊论文 李小杜;尚林;朱亚丹;贾志刚;梅伏洪;翟光美;李学敏;许并社
13 Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N-2/H-2 mixture gas 期刊论文 Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe
14 TMIn流量对GaN基蓝光LED外延薄膜的影响 期刊论文 李天保;赵广洲;尚林;董海亮;贾伟;余春燕
15 中高温GaN插入层厚度对蓝光LED光电性能的影响 期刊论文 刘青明;卢太平;朱亚丹;韩丹;董海亮;尚林;赵广洲;赵晨;周小润;翟光美;贾志刚;梁建;马淑芳;薛晋波;李学敏;许并社
16 Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer 期刊论文 GuangyunTong;Wei Jia;Teng Fang;Hailiang Dong;Tianbao Li;Zhigang Jia;Bingshe Xu
17 Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N-2/H-2-Grown GaN Barrier 期刊论文 Zhou Xiaorun;Lu Taiping;Zhu Yadan;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Yang Yongzhen;Chen Yongkang;Xu Bingshe
18 一种高发光效率氮化镓基LED外延片的制备方法 专利 卢太平;朱亚丹;周小润;许并社
19 一种GaN基绿光LED外延结构及其制备方法 专利 卢太平;朱亚丹;许并社
20 Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells 期刊论文 Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe
21 Effects of GaxZn1−xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes 期刊论文 Rui Li;Chunyan Yu;Hailiang Dong;Wei Jia;Tianbo Li;Zhuxiang Zhang;Bingshe Xu
22 Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip 期刊论文 Dan Han;Shufang Ma;Zhigang Jia;Peizhi Liu;Wei Jia;Hailiang Dong;Lin Shang;Guangmei Zhai;Bingshe Xu
23 Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips 期刊论文 Dan Han;Shufang Ma;Zhigang Jia;Peizhi Liu;Wei Jia;Lin Shang;Guangmei Zhai;Bingshe Xu
24 Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells 期刊论文 Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe
25 非故意掺杂GaN层厚度对蓝光LED波长均匀性的影响 期刊论文 李天保;赵广洲;卢太平;朱亚丹;周小润;董海亮;尚林;贾伟;余春燕;许并社
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