发射极注入增强型IGBT快速关断机理与新结构
51877030
2018
E0706.电力电子学
陈万军
面上项目
教授
电子科技大学
63万元
功率开关器件;快速关断机理;功耗;绝缘栅双极型晶体管;发射极注入增强
2019-01-01到2022-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | A Novel Self-Regulated Potential SOI LIGBT With Low ON-State Voltage and Turn-off Loss | 会议论文 | Yun Xia;Wanjun Chen;Wuhao Gao;Bin Qiao;Chao Liu;Yijun Shi;Yajie Xin;Fangzhou Wang;Yu Shi;Ruize Sun;Qi Zhou;Zhaoji Li;Bo Zhang |
| 2 | A Novel CSTBT with Hole Barrier for High $dV/dt$ Controllability and Low EMI Noise | 会议论文 | Xiaorui Xu;Wanjun Chen;Chao Liu;Yuan Wang;Nan Chen;Fangzhou Wang;Qi Shi;Kenan Zhang;Qi Zhou;Zhaoji Li;Bo Zhang |
| 3 | An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection | 期刊论文 | Wanjun Chen;Xiaorui Xu;Xiyuan Liu;Chao Liu;Yijun Shi;Nan Chen;Fangzhou Wang;Yuan Wang;Kenan Zhang;Qi Zhou;Zhaoji Li;Bo Zhang |
| 4 | 一种MOS栅控晶闸管及其制造方法 | 专利 | 陈万军;张舒逸;刘超;张波 |
| 5 | Voltage Coupling Enhancement for Transient Gate Overvoltage Suppression of Insulated Gate Trigger Thyristor in Ultrahigh di/dt Pulse Applications | 期刊论文 | Chao Liu;Wanjun Chen;Ruize Sun;Xiaorui Xu;Zhou Qijun;Rongwei Yuan;Zhaoji Li;Bo Zhang |
| 6 | Experimentally Demonstrating Fast Neutron Irradiation Effect on High-di/dt Switching Characteristics of Insulated Gate Triggered Thyristor for Pulse Power | 会议论文 | Chao Liu;Chao Yang;Wanjun Chen;Ruize Sun;Xiaorui Xu;Yun Xia;Yajie Xin;Zhaoji Li;Bo Zhang |
| 7 | Modeling the Influence of Acceptor-type Trap on the 2DEG Density for GaN MIS-HEMT | 期刊论文 | Yijun Shi;Wanjun Chen;Ruize Sun;Chao Liu;Yajie Xin;Yun Xia;Fangzhou Wang;Xiaorui Xu;Xiaochuan Deng;Tangsheng Chen;Bo Zhang |
| 8 | Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature | 期刊论文 | Yajie Xin;Wanjun Chen;Ruize Sun;Xiaochuan Deng;Zhaoji Li;Bo Zhang |
| 9 | A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High-di/dt Characteristics | 期刊论文 | Chao Liu;Wanjun Chen;Yijun Shi;Hong Tao;Qijun Zhou;Huiling Zuo;Bin Qiao;Yun Xia;Ziyan Xiao;Wuhao Gao;Nan Chen;Xiaorui Xu;Qi Zhou;Zhaoji Li;Bo Zhang |
| 10 | Temperature Dependence of Pulsed Power Performance of Insulated Gate Trigger Thyristor | 期刊论文 | Ruize Sun;Chao Liu;Wanjun Chen;Zheng Cheng;Zhaoji Li;Bo Zhang |
| 11 | An Ultralow Loss Reverse-Conducting LIGBT With Embedded P-P-N Diode in Oxide Trench | 期刊论文 | Yun Xia;Wanjun Chen;Chao Liu;Ruize Sun;Zhaoji Li;Bo Zhang |
| 12 | 一种具有低EMI噪声的槽栅双极型晶体管 | 专利 | 陈万军;许晓锐;王方洲;刘超;张波 |
| 13 | Design and Experimental Verification of an Efficient SSCB Based on CS-MCT | 期刊论文 | Xu Xiaorui;Chen Wanjun;Tao Hong;Zhou Qi;Li Zhaoji;Zhang Bo |
| 14 | An Efficient and Reliable Solid-State Circuit Breaker Based on Mixture Device | 期刊论文 | Xiaorui Xu;Wanjun Chen;Chao Liu;Ruize Sun;Zhaoji Li;Bo Zhang |
| 15 | 4.5kV Insulated Gate Triggered Thyristor (IGTT) with High $di/dt$ Characteristics for Pulse Power Applications | 会议论文 | Chao Liu;Wanjun Chen;Yijun Shi;Bin Qiao;Qian Jiang;Yun Xia;Qijun Zhou;Xiaorui Xu;Qi Zhou;Zhaoji Li;Bo Zhang |
| 16 | Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect | 期刊论文 | Xiaorui Xu;Wanjun Chen;Shuyi Zhang;Chao Liu;Ruize Sun;Zhaoji Li;Bo Zhang |
| 17 | 一种具备栅极自钳位功能的三维 IGBT 及其制造方法 | 专利 | 陈万军;朱建泽;杨超;汪淳鹏;刘超 |
| 18 | 一种具有寄生二极管的MOS栅控晶闸管及其制造方法 | 专利 | 陈万军;张舒逸;刘超;张波 |
| 19 | 一种压控型发射极关断晶闸管器件及其制造方法 | 专利 | 陈万军;朱建泽;汪淳鹏;杨超;刘超 |
| 20 | An Ultralow Loss N-channel RB-IGBT with P-drift Region | 会议论文 | Xiaorui Xu;Wanjun Chen;Fangzhou Wang;Ruize Sun;Chao Liu;Yun Xia;Yajie Xin;Qi Zhou;Zhaoji Li;Bo Zhang |
| 21 | Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition | 期刊论文 | Wanjun Chen;Yajie Xin;Kemeng Zhang;Cao Deng;Qi Zhou;Xiaochuan Deng;Zhaoji Li;Bo Zhang;Huiling Zuo;Qijun Zhou;Wuhao Gao;Yun Xia;Chao Liu;Hong Tao;Yawei Liu;Yijun Shi |
| 22 | Study on Transient Turn-On Characteristics of Pulse Power Thyristor-Type Devices Under Ultrahigh d$textit{i}$/d$textit{t}$ Condition | 期刊论文 | Chao Liu;Pengcheng Xing;Shuyi Zhang;Wanjun Chen;Ruize Sun;Xiaorui Xu;Yun Xia;Yajie Xin;Yijun Shi;Zhaoji Li;Bo Zhang |
| 23 | Design of an Isolated Circuit Breaker With Robust Interruption Capability for DC Microgrid Protection | 期刊论文 | Xiaorui Xu;Wanjun Chen;Zhang Shuyi;Qi Zhou;Zhaoji Li;Bo Zhang |
| 24 | A Novel Full Tun-on Reverse-Conducting IGBT with Enhanced Carrier Concentration Modulation in Collector Side | 会议论文 | Chao Liu;Guoyun Wu;Meng Wei;Xiaorui Xu;Pengcheng Xing;Ping Zhang;Ruize Sun;Wanjun Chen;Zhaoji Li;Bo Zhang |
| 25 | High Voltage Insulated Gate Trigger Thyristor with High-efficiency injection for fast Turn-on and High Current Pulse | 期刊论文 | Chao Liu;Wanjun Chen;Ruize Sun;Yijun Shi;Qi Zhou;Zhaoji Li;Bo Zhang |
| 26 | A Novel IGBT With Self-Regulated Potential for Extreme Low EMI Noise | 期刊论文 | Xiaorui Xu;Wanjun Chen;Chao Liu;Nan Chen;Fangzhou Wang;Yuan Wang;Kenan Zhang;Yinchang Ma;Zhang Shuyi;Qi Zhou;Zhaoji Li;Bo Zhang |
| 27 | Enhanced Reverse Recovery Performance in Superjunction MOSFET with Reduced Hole-Barrier | 期刊论文 | Yun Xia;Wanjun Chen;Chao Liu;Ruize Sun;Zhaoji Li;Bo Zhang |
| 28 | A High Voltage Superjunction MOSFET with Enhanced Reverse Recovery Performance | 会议论文 | Yun Xia;Wanjun Chen;Ruize Sun;Chao Liu;Zhaoji Li;Bo Zhang |
| 29 | A Novel Thyristor-Based Bidirectional SSCB With Controllable Current Breaking Capability | 期刊论文 | Xiaorui Xu;Wanjun Chen;Chao Liu;Ruize Sun;Fangzhou Wang;Zhaoji Li;Bo Zhang |
| 30 | Evaluation of an Effective DC Solid State Circuit Breaker Based on CS-MCT | 会议论文 | Yuxiao Yang;Wanjun Chen;Hongyang Zhang;Xiaorui Xu;Bo Zhang |
| 31 | 一种具有两种导电模式的超结MOSFET | 专利 | 陈万军;张兴强;夏云 |
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