半超结场终止型IGBT的静态动态解析模型及优化方法的研究

51607026
2016
E0706.电力电子学
黄海猛
青年科学基金项目
讲师
电子科技大学
21万元
优化设计;场终止;解析模型;绝缘栅双极型晶体管;半超结
2017-01-01到2019-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
查看更多信息请先登录或注册
查看更多信息请先登录或注册
查看更多信息请先登录或注册
重置
序号 标题 类型 作者
1 Study on SrTiO3 film for the application of power devices 期刊论文 Lin Jingjie;Cheng Junji;Li Ping;Chen Weizhen;Huang Haimeng
2 一种基于结终端的RC-IGBT器件 专利 黄海猛;刘远成;胡浩
3 Simulation Study of a Low ON-State Voltage and Saturation Current TCIGBT With Diodes 期刊论文 Huang Jun;Huang Haimeng;Chen Xingbi
4 A Novel Double-RESURF SOI Lateral TIGBT With Self-Biased nMOS for Improved V-CE(sat)-E-off Tradeoff Relationship 期刊论文 Hu Huan;Huang Haimeng;Chen Xing Bi
5 Analytical Models of Breakdown Voltage and Specific On-Resistance for Vertical GaN Unipolar Devices 期刊论文 Haimeng Huang;Jun Huang;Huan Hu;Junji Cheng;Bo Yi
6 A low On-state Voltage TIGBT with Planar GateSelf-biased pMOS 会议论文 Ping Li;Haimeng Huang;Xingbi Chen
7 The Oppositely Doped Islands IGBT Achieving Ultralow Turn Off Loss 期刊论文 Chen Weizhen;Cheng Junji;Huang Haimeng;Zhang Bingke;Chen Xing Bi
8 Simulation Study of a Low ON-State Voltage Superjunction IGBT With Self-Biased PMOS 期刊论文 Huang Jun;Huang Haimeng;Chen Xing Bi
9 Simulation Study of a Low Switching Loss FD-IGBT With High dI/dt and dV/dt Controllability 期刊论文 Huang Jun;Huang Haimeng;Lyu Xinjiang;Chen Xing Bi
10 A unified model for vertical doped and polarized superjunction GaN devices 期刊论文 Haimeng Huang;Junji Cheng;Bo Yi;Weijia Zhang;Wai Tung Ng
11 A TCAD Study on Lateral Power MOSFET With Dual Conduction Paths and High-k Passivation 期刊论文 Junji Cheng;Haimeng Huang;Bo Yi;Weijia Zhang;Wai Tung Ng
12 Study of the SOI LDMOS With Low Conduction Loss and Less Gate Charge 期刊论文 Guo Songnan;Huang Haimeng;Chen Xing Bi
13 An improved SOI trench LDMOST with double vertical high-k insulator pillars 期刊论文 Huan Li;Haimeng Huang;Xingbi Chen
查看更多信息请先登录或注册

相关项目

趋势报告

经验分享