绝缘体上锗(GOI)纳米带应变调控机理及其MOSFET研究
61474094
2014
F0403.半导体光电子器件与集成
李成
面上项目
教授
厦门大学
85万元
MOS器件;迁移率;绝缘体上锗;应变锗
2015-01-01到2018-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Thermal annealing and magnetic anisotropy of NiFe thin films on n(+)-Si for spintronic device applications | 期刊论文 | Lu Q. H.;Huang R.;Wang L. S.;Wu Z. G.;Li C.;Luo Q.;Zuo S. Y.;Li J.;Peng D. L.;Han G. L.;Yan P. X. |
| 2 | Impacts of Dislocations on the Anisotropic Etching of Ge/Si for Suspended Ge Membrane | 期刊论文 | Chen Chaowen;Lin Guangyang;Lan Xiaoling;Chen Ningli;Li Cheng;Chen Songyan;Huang Wei;Lai Hongkai |
| 3 | Strain evolution of SiGe-on-insulator fabricated by germanium condensation method with over-oxidation | 期刊论文 | Lin Guangyang;Lan Xiaoling;Chen Ningli;Li Cheng;Huang Donglin;Chen Songyan;Huang Wei;Xu Jianfang;Lai Hongkai |
| 4 | 一种Ge组分及带宽可调控的SiGe纳米带的制备方法 | 专利 | 李成;卢卫芳;黄诗浩;林光杨;陈松岩 |
| 5 | Strong electroluminescence from direct band and defects in Ge n plus /p shallow junctions at room temperature | 期刊论文 | Lin Guangyang;Wang Chen;Li Cheng;Chen Chaowen;Huang Zhiwei;Huang Wei;Chen Songyan;Lai Hongkai;Jin Chunyan;Sun Jiaming |
| 6 | Modulation of WNx/Ge Schottky barrier height by varying N composition of tungsten nitride | 期刊论文 | Wei Jiang-Bin; Chi Xiao-Wei; Lu Chao; Wang Chen; Lin Guang-Yang; Wu Huan-Da; Huang Wei; Li Cheng; Chen Song-Yan; Liu Chun-Li |
| 7 | 硅基锗薄膜选区外延生长研究 | 期刊论文 | 汪建元;王尘;李成;陈松岩 |
| 8 | Low dark current broadband 360-1650 nm ITO/Ag/n-Si Schottky photodetectors | 期刊论文 | Huang Zhiwei;Mao Yichen;Lin Guangyang;Yi Xiaohui;Chang Ailing;Li Cheng;Chen Songyan;Huang Wei;Wang Jianyuan |
| 9 | Low-dark-current, high-responsivity indium-doped tin oxide/Au/n-Ge Schottky photodetectors for broadband 800-1650 nm detection | 期刊论文 | Huang Zhiwei;Mao Yichen;Chang Ailing;Hong Haiyang;Li Cheng;Chen Songyan;Huang Wei;Wang Jianyuan |
| 10 | Low-temperature formation of GeSn nanocrystallite thin films by sputtering Ge on self-assembled Sn nanodots on SiO2/Si substrate | 期刊论文 | Chen Ningli;Lin Guangyang;Zhang Lu;Li Cheng;Chen Songyan;Huang Wei;Xu Jianfang;Wang Jianyuan |
| 11 | Strong room temperature electroluminescence from lateral p-SiGe/i-Ge/n-SiGe heterojunction diodes on silicon-on-insulator substrate | 期刊论文 | Lin Guangyang;Yi Xiaohui;Li Cheng;Chen Ningli;Zhang Lu;Chen Songyan;Huang Wei;Wang Jianyuan;Xiong Xihuan;Sun Jiaming |
| 12 | Resistive switching properties of polycrystalline HfOi(x)N(y) films by plasma-enhanced atomic layer deposition | 期刊论文 | Yu Jue;Huang Wei;Lu Chao;Lin Guangyang;Li Cheng;Chen Songyan;Wang Jianyuan;Xu Jianfang;Liu Chunli;Lai Hongkai |
| 13 | Self-compliance Pt/HfO2/Ti/Si one-diode-one-resistor resistive random access memory device and its low temperature characteristics | 期刊论文 | Lu Chao;Yu Jue;Chi Xiao-Wei;Lin Guang-Yang;Lan Xiao-Ling;Huang Wei;Wang Jian-Yuan;Xu Jian-Fang;Wang Chen;Li Cheng;Chen Song-Yan;Liu Chunli;Lai Hong-Kai |
| 14 | Raman scattering study of amorphous GeSn films and their crystallization on Si substrates | 期刊论文 | Zhang Lu;Wang Yisen;Chen Ningli;Lin Guangyang;Li Cheng;Huang Wei;Chen Songyan;Xu Jianfang;Wang Jianyuan |
| 15 | Impacts of ITO interlayer thickness on metal/n-Ge contacts | 期刊论文 | Huang Zhiwei;Mao Yichen;Lin Guangyang;Wang Yisen;Li Cheng;Chen Songyan;Huang Wei;Xu Jianfang |
| 16 | Optical gain from vertical Ge-on-Si resonant-cavity light emitting diodes with dual active regions | 期刊论文 | Lin Guangyang;Wang Jiaqi;Huang Zhiwei;Mao Yichen;Li Cheng;Huang Wei;Chen Songyan;Lai Hongkai;Huang Shihao |
| 17 | An improvement of HfO2/Ge interface by iremote N-2 plasma pretreatment for Ge MOS devices | 期刊论文 | Chi Xiaowei;Lan Xiaoling;Lu Chao;Hong Haiyang;Li Cheng;Chen Songyan;Lai Hongkai;Huang Wei;Xu Jianfang |
| 18 | Room Temperature Electroluminescence from Tensile-Strained Si0.13Ge0.87/Ge Multiple Quantum Wells on a Ge Virtual Substrate | 期刊论文 | Lin Guangyang;Chen Ningli;Zhang Lu;Huang Zhiwei;Huang Wei;Wang Jianyuan;Xu Jianfang;Chen Songyan;Li Cheng |
| 19 | Suppressing the formation of GeOx by doping Sn into Ge to modulate the Schottky barrier height of metal/n-Ge contact | 期刊论文 | Huang Zhiwei;Li Cheng;Lin Guangyang;Lai Shumei;Wang Chen;Huang Wei;Wang Jianyuan;Chen Songyan |
| 20 | TiO2 Nanocrystal/Perovskite Bilayer for High-Performance Photodetectors | 期刊论文 | Yi Xiaohui;Ren Zhenwei;Chen Ningli;Li Cheng;Zhong Xinhua;Yang Shiyong;Wang Jizheng |
| 21 | Amazing diffusion depth of ultra-thin hafnium oxide film grown on n-type silicon by lower temperature atomic layer deposition | 期刊论文 | Lu Qihai;Huang Rong;Lan Xiaoling;Chi Xiaowei;Lu Chao;Li Cheng;Wu Zhiguo;Li Jun;Han Genliang;Yan Pengxun |
| 22 | Crystallization of GeSn thin films deposited on Ge(100) substrate by magnetron sputtering | 期刊论文 | Wang Yisen;Zhang Lu;Huang Zhiwei;Li Cheng;Chen Songyan;Huang Wei;Xu Jianfang;Wang Jianyuan |
| 23 | Simulation of spontaneous emission spectrum of degenerate Ge under large injection level | 期刊论文 | Wang Jian-Yuan;Lin Guang-Yang;Wang Jia-Qi;Li Cheng |
| 24 | Formation of high-Sn content polycrystalline GeSn films by pulsed laser annealing on co-sputtered amorphous GeSn on Ge substrate | 期刊论文 | Zhang Lu;Hong Hai-Yang;Wang Yi-Sen;Li Cheng;Lin Guang-Yang;Chen Song-Yan;Huang Wei;Wang Jian-Yuan |
| 25 | Impacts of excimer laser annealing on Ge epilayer on Si | 期刊论文 | Huang Zhiwei;Mao Yichen;Yi Xiaohui;Lin Guangyang;Li Cheng;Chen Songyan;Huang Wei;Wang Jianyuan |
| 26 | High-Performance Ge p-n Photodiode Achieved With Preannealing and Excimer Laser Annealing | 期刊论文 | Wang Chen;Li Cheng;Wei Jiangbin;Lin Guangyang;Lan Xiaoling;Chi Xiaowei;Lu Chao;Huang Zhiwei;Chen Chaowen;Huang Wei;Lai Hongkai;Chen Songyan |
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