【10974165】氮化物半导体非对称耦合微纳结构光学性质研究国家自然基金项目

氮化物半导体非对称耦合微纳结构光学性质研究

项目批准号： 10974165

批准年份： 2009

学科分类： A2206.微纳光学与光子学

项目负责人：张保平

资助类别：面上项目

负责人职称：教授

依托单位：厦门大学

资助金额： 44万元

关键词：氮化镓;微纳结构;宽禁带半导体

起止时间： 2010-01-01到2012-12-31

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序号	标题	类型	作者
1	Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector	期刊论文	L. E. Cai\|B. P. Zhang\|J. Y. Zhang\|C. M. Wu\|F. Jiang\|X. L. Hu\|M. Chen\|Q. M. Wang\|
2	Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes	期刊论文	W. J. Liu\|B. P. Zhang\|X. L. Hu\|J. Y. Zhang\|G. E. Weng\|X. Q. Lv\|H. J. Huang\|M. Chen\|X. M. Cai\|L. Y. Ying\|
3	Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique	期刊论文	J. Y. Zhang\|W. J. Liu\|M. Chen\|X. L. Hu\|X. Q. Lv\|L. Y. Ying\|B. P. Zhang\|
4	Investigation of InGaN p-i-n Homojunction and Heterojunction Solar Cells	期刊论文	X .M. Cai\|Y. Wang\|B. H. Chen\|M. M. Liang\|W. J. Liu\|J. Y. Zhang\|X. Q. Lv\|L. Y. Ying\|B. P. Zhang\|
5	Dependence of the Property of InGaN p-i-n Solar Cells on the Light Concentration and Temperature	期刊论文	X .M. Cai\|B. P. Zhang\| S. W. Zeng\|X. Li\|J. Y. Zhang\|S. Lin\|A. K. Ling\|M. Chen\|W. J. Liu\|S. X. Wu\|
6	Optical properties of ZnO/MgZnO quantum wells with graded thickness	期刊论文	X. Q. Lv\|J. Y. Zhang\|W. J. Liu\|X. L. Hu\|M. Chen\|B. P. Zhang\|
7	Fabrication and Characterization of High-Quality Factor GaN-Based Resonant-Cavity Blue Light-Emitting Diodes	期刊论文	X. L. Hu\|B. P. Zhang\|W. J. Liu\|G. E. Weng\|J. Y. Zhang\|X. Q. Lv\|M. M. Liang\|M. Chen\|H. J. Huang\|L. Y. Ying\|
8	Efficient hole transport in asymmetric coupled InGaN multiple quantum wells	期刊论文	J. Y. Zhang\|L. E. Cai\|B. P. Zhang\|X. L. Hu\|F. Jiang\|J. Z. Yu\|Q. M. Wang\|
9	Preparation and properties of Ni/InGaN/GaN Schottky barrier photovoltaic cells	期刊论文	S. Lin\|B. P. Zhang\|S. W. Zeng\|X. M. Cai\|J. Y. Zhang\|S. X. Wu\|A. K. Ling\|G. E. Weng\|
10	Fabrication of vertical-structured GaN-based light-emitting diodes using auto-split laser lift-off technique	期刊论文	M. Chen\|X. Q. Lv\|L. Y. Ying\|Z. R. Qiu\|B. P. Zhang\|L. J. Liu\|L. E. Cai\|J. Y. Zhang\|L. Sun\|M. M. Liang\|X. L. Hu\|X. M. Cai\|F. Jiang\|
11	Simulation of doping levels and deep levels in InGaN-based single-junction solar cell	期刊论文	S. Lin\|S. W. Zeng\|X .M. Cai\|J. Y. Zhang\|S. X. Wu\|L. Sun\|B. P. Zhang\|
12	电注入高Q值氮化物谐振腔器件的研制	会议论文	胡晓龙\|刘文杰\|张江勇\|应磊莹\|吕雪芹\|张保平\|
13	蓝绿光VCSEL与RCLED研究	会议论文	张保平\|张江勇\|胡晓龙\|蔡丽娥\|刘文杰\|陈明\|王启明\|
14	Fabrication and Operation of InGaN Quantum-well Optical Devices	会议论文	B. P. Zhang\|
15	The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses	期刊论文	X. L. Hu\|J. Y. Zhang\|S. J. Zhi\|L. W. Jie\|B. P. Zhang\|
16	Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers	期刊论文	X. M. Cai\|Y. Wang\|Z. D. Li\|X. Q. Lv\|J. Y. Zhang\|L. Y. Ying\|B. P. Zhang\|
17	Resonant-cavity blue light-emitting diodes fabricated by two-step substrate transfer technique	期刊论文	X. L. Hu\|J. Y. Zhang\|W. J. Liu\|M. Chen\|B. P. Zhang\|B. S. Xu\|Q. M. Wang\|
18	Effect of laserpulse width on the laser lift-off process of GaN films	期刊论文	M. Chen\|J. Y. Zhang\|X. Q. Lv\| L. Y. Ying\|B. P. Zhang\|
19	High-reflectivity AlN/GaN distributed Bragg reflectors grown on sapphire substrates by MOCVD	期刊论文	C. M. Wu\|B. P. Zhang\|J. Z. Shang\|L. E. Cai\|J. Y. Zhang\|J. Z. Yu\|Q. M. Wang\|
20	Formation of high reflective Ni/Ag/Ti/Au contact on p-GaN	期刊论文	F. Jiang\|L. E. Cai\|J. Y. Zhang\|B. P. Zhang\|
21	电注入高Q值氮化物谐振腔器件的研制	会议论文	胡晓龙\|刘文杰\|张江勇\|应磊莹\|吕雪芹\|张保平\|

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