三维单片集成SRAM重离子单粒子效应研究
11905287
2019
A3001.粒子束与物质相互作用
刘凡宇
青年科学基金项目
副研究员
中国科学院微电子研究所
24万元
三维单片集成;单粒子效应;抗辐射加固;6管SRAM单元;单粒子翻转
2020-01-01到2022-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Impact of back-gate bias on single event upset in monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology | 会议论文 | Jun-Jun Zhang Fanyu Liu;Fanyu Liu;Bo Li;Yang Huang;Jin-Xing Cheng;Ying Gao;Can Yang;Xiao-Hui Su;Guo-Qing Wang;Jiajun Luo;Zheng-Sheng Han |
| 2 | Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature | 期刊论文 | Zhang Junjun;Liu Fanyu;Li Bo;Li Binhong;Huang Yang;Yang Can;Wang Guoqing;Wang Rongwei;Luo Jiajun;Han Zhengsheng |
| 3 | 一种三维单片集成电路单粒子效应的仿真方法及装置 | 专利 | 刘凡宇 |
| 4 | 中国科学院青年创新促进会 | 奖励 | 刘凡宇 |
| 5 | Dependence of Temperature and Back-Gate Bias on Single-Event Upset Induced by Heavy Ion in 0.2-u m DSOI CMOS Technology | 期刊论文 | Wang Yuchong;Liu Fanyu;Li Bo;Li Binhong;Huang Yang;Yang Can;Zhang Junjun;Wang Guoqing;Luo Jiajun;Han Zhengsheng;Petrosyants Konstantin O. |
| 6 | Layout-based mitigation of single-event transient for monolithic 3D CMOS integrated circuits | 期刊论文 | Junjun Zhang;Fanyu Liu;Bo Li;Yang Huang;Can Yang;Guoqing Wang;Siyuan Chen;Jinxing Cheng;Qingbo Wang;Ai Yu;Jiajun Luo |
| 7 | Ultra-High-Energy Heavy Ion Induced Single Event Effects of TSV-Based 3D Integrated SOI SRAM circuits | 会议论文 | Junjun Zhang;Fanyu Liu;Bo Li;Jiantou Gao;Peixiong Zhao;Jie Liu;Jiajun Luo |
| 8 | Layout-based mitigation of single-event transient for monolithic 3D CMOS integrated circuits | 会议论文 | Junjun Zhang;Fanyu Liu;Bo Li;Yang Huang;Can Yang;Guoqing Wang;Siyuan Chen;Jinxing Cheng;Qingbo Wang;Ai Yu;Jiajun Luo |
| 9 | 一种单片三维集成器件和单片三维集成电路 | 专利 | 刘凡宇 |
| 10 | 一种层间孔建模方法、扛单粒子效应分析方法及装置 | 专利 | 刘凡宇 |
| 11 | Single Event Induced Crosstalk of Monolithic 3D Circuits Based on a 22 nm FD-SOI Technology | 会议论文 | Junjun Zhang;Fanyu Liu;Bo Li;Yang Huang;Siyuan Chen;Yuchong Wang;Jiajun Luo;Jing Wan |
| 12 | Comparison of Total Ionizing Dose Effects in SOI FinFETs Between Room and High Temperature | 期刊论文 | Zhang Xu;Liu Fanyu;Li Bo;Yang Can;Huang Yang;Lu Peng;Chen Siyuan;Cheng Jinxing;Wang Qingbo;Yu Ai;Zhang TieXin;Zheng Zhongshan;Zhang Qingzhu;Yin Huaxiang;Luo Jiajun |
| 13 | Single event upset for monolithic 3-D integrated 6T SRAM based on a 22 nm FD-SOI technology: Effects of channel size and temperature | 会议论文 | Junjun Zhang;Fanyu Liu;Bo Li;Binhong Li;Yang Huang;Can Yang;Guoqing Wang;Rongwei Wang;Jiajun Luo;Zhengsheng Han |
| 14 | A current model for FOI FinFETs with back-gate bias modulation | 期刊论文 | Liu Fanyu;Zhang Xu;Zhang Fengyu;Li Bo;Li Binhong;Huang Yang;Wang Guoqing;Chen Siyuan;Zhang Qingzhu;Yin Huaxiang;Luo Jiajun;Han Zhengsheng;Guo Yufeng;Sorin Cristoloveanu |
| 15 | Pseudo-MOSFET transient behavior: Experiments, model, substrate and temperature effect | 期刊论文 | Zhang X.;Liu F. Y.;Li B.;Li B. H.;Luo J. J.;Han Z. S.;Arsalan M.;Wan J.;Cristoloveanu S. |
| 16 | 基于TSV转接板的3D SRAM单粒子多位翻转效应 | 期刊论文 | 王荣伟;范国芳;李博;刘凡宇 |
| 17 | 单粒子翻转截面测试方法、装置、电子设备及存储介质 | 专利 | 刘凡宇 |
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