| 1 |
Influence of pressure on donor bound exciton states in wurtzite InGaN/GaN quantum dot nanowire heterostructures
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期刊论文 |
Min Zhang;Jun-jie Shi |
| 2 |
Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?
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期刊论文 |
Ruge Quhe;Xiyou Peng;Yuanyuan Pan;Meng Ye;Yangyang Wang;Han Zhang;Shenyan Feng;Qiaoxuan Zhang;Junjie Shi;Jinbo Yang;Dapeng Yu;Ming Lei;Jing Lu |
| 3 |
Breakthrough of the p-type doping bottleneck in ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer doped with NX or AgZn
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期刊论文 |
Xin-He Jiang;Jun-Jie Shi;Min Zhang;Hong-Xia Zhong;Pu Huang;Yi-Min Ding;Xiong Cao;Meng Wu;Zhimin Liao |
| 4 |
Reduction of the Mg acceptor activation energy in GaN, AlN, Al0.83Ga0.17N and MgGa d-doping (AlN)5/(GaN)1: the strain effect
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期刊论文 |
Xin-He Jiang;Jun-Jie Shi;Min Zhang;Hong-Xia Zhong;Pu Huang;Yi-Min Ding;Ying-Ping He;Xiong Cao |
| 5 |
Origin of the wide band gap from 0.6 to 2.3 eV in photovoltaic material InN: quantum confinement from surface nanostructure
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期刊论文 |
Pu Huang;Jun-jie Shi;Ping Wang;Min Zhang;Yi-min Ding;Meng Wu;Jing Lu;Xin-qiang Wang |
| 6 |
Enhancement of hole mobility in InSe monolayer via InSe and black phosphorus heterostructure
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期刊论文 |
Yi-min Ding;Jun-jie Shi;Congxin Xia;Min Zhang;Juan Du;Pu Huang;Meng Wu;Hui Wang;Yu-lang Cen;Shu-hang Pan |
| 7 |
Origin of 3.45 eV Emission Line and Yellow Luminescence Band in GaN Nanowires: Surface Microwire and Defect
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期刊论文 |
Pu Huang;Hua Zong;Jun-jie Shi;Min Zhang;Xin-he Jiang;Hong-xia Zhong;Yi-min Ding;Ying-ping He;Jing Lu;Xiao-dong Hu |
| 8 |
Electronic, photocatalytic and piezoelectric properties of n=3 DionJacobson-type perovskite monolayer A’[A2B3O10]
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期刊论文 |
Yi-min Ding;Jun-jie Shi;Min Zhang;Meng Wu;Hui Wang;Yu-lang Cen;Wen-hui Guo;Shu-hang Pan |
| 9 |
固体量子场论
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专著 |
史俊杰;刘自信;刘玉芳 |
| 10 |
Improving p-type doping efficiency in Al0.83Ga0.17N alloy substituted by nanoscale (AlN)5/(GaN)1 superlattice with MgGa-ON d-codoping: Role of O-atom in GaN monolayer
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期刊论文 |
Hong-xia Zhong;Jun-jie Shi;Min Zhang;Xin-he Jiang;Pu Huang;Yi-min Ding |
| 11 |
The strain induced band gap modulation from narrow gap semiconductor to half-metal on Ti2CrGe: A first principles study
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期刊论文 |
Jia Li;Zhidong Zhang;Zunming Lu;Hongxian Xie;Wei Fang;Shaomin Li;Chunyong Liang;Fuxing Yin |
| 12 |
Quasiparticle Band Gaps, Excitonic Effects, and Anisotropic Optical Properties of Monolayer Distorted 1-T Diamond-Chain Structure ReS2 and ReSe2
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期刊论文 |
Hong-Xia Zhong;Shiyuan Gao;Jun-Jie Shi;Li Yang |
| 13 |
K-L crossover transition in the conduction band of monolayer MoS2 under hydrostatic pressure
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期刊论文 |
Lei Fu;Yi Wan;Ning Tang;Yi-min Ding;Jing Gao;Jiachen Yu;Hongming Guan;Kun Zhang;Weiying Wang;Caifeng Zhang;Jun-jie Shi;Xiang Wu;Su-Fei Shi;Weikun Ge;Lun Dai;Bo Shen |
| 14 |
Many-Body Effect and Device Performance Limit of Monolayer InSe
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期刊论文 |
Yangyang Wang;Ruixiang Fei;Ruge Quhe;Jingzhen Li;Han Zhang;Xiuying Zhang;Bowen Shi;Lin Xiao;Zhigang Song;Jinbo Yang;Junjie Shi;Feng Pan;Jing Lu |
| 15 |
Improvement of n-type conductivity in hexagonal boron nitride monolayers by doping, strain and adsorption
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期刊论文 |
Yi-min Ding;Jun-jie Shi;Min Zhang;Xin-he Jiang;Hong-xia Zhong;Pu Huang;Meng Wu;Xiong Cao |
| 16 |
Modulation of electronic and magnetic properties in InSe nanoribbons: edge effect
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期刊论文 |
Meng Wu;Jun-jie Shi;Min Zhang;Yi-min Ding;Hui Wang;Yu-lang Cen;Wen-hui Guo;Shu-hang Pan;Yao-hui Zhu |
| 17 |
Tuning the electronic and optical properties of hexagonal boron-nitride nanosheet by inserting graphene quantum dots
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期刊论文 |
Yi-Min Ding;Jun-Jie Shi;Min Zhang;Meng Wu;Hui Wang;Yu-Lang Cen;Shu-Hang Pan;Wen-Hui Guo |
| 18 |
Silicene on substrates: A theoretical perspective
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期刊论文 |
Zhong Hong-Xia;Quhe Ru-Ge;Wang Yang-Yang;Shi Jun-Jie;Lu Jing |
| 19 |
Anomalous Pressure Characteristics of Defects in Hexagonal Boron Nitride Flakes
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期刊论文 |
Yongzhou Xue;Hui Wang;Qinghai Tan;Jun Zhang;Tongjun Yu;Kun Ding;Desheng Jiang;Xiuming Dou;Junjie Shi;Bao-quan Sun |
| 20 |
Modulation of electronic and optical properties of ZnO by inserting an ultrathin ZnX (X = S, Se and Te) layer to form short-period (ZnO)(5)/(ZnX)(1) superlattice
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期刊论文 |
Jiang Xin-he;Shi Jun-jie;Zhang Min;Zhong Hong-xia;Huang Pu;Ding Yi-min;Cao Xiong;Wu Meng |
| 21 |
Spin-accumulation capacitance and its application to magnetoimpedance
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期刊论文 |
Zhu Yao-Hui;Zhang Xiao-Xue;Liu Jian;He Pei-Song |
| 22 |
Electric field modulation of electronic structures in InSe and black phosphorus heterostructure
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期刊论文 |
Yi-min Ding;Jun-jie Shi;Min Zhang;Congxin Xia;Meng Wu;Hui Wang;Yu-lang Cen;Shu-hang Pan |
| 23 |
Magnetic engineering in InSe/black-phosphorus heterostructure by transition-metal-atom Sc-Zn doping in the van der Waals gap
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期刊论文 |
Yi-min Ding;Jun-jie Shi;Min Zhang;Yao-hui Zhu;Meng Wu;Hui Wang;Yu-lang Cen;Wen-hui Guo;Shu-hang Pan |
| 24 |
Modeling the curvature and interface shear stress of GaN-sapphire system
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期刊论文 |
Jia Li;Junjie Shi;Jiejun Wu;Huizhao Liu |
| 25 |
Electronic Structure and Optical Property of GaN-based Alloys and Nano-materials
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专著 |
Zhang Min;Shi Jun-jie |
| 26 |
Monolayer Phosphorene−Metal Contacts
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期刊论文 |
Yuanyuan Pan;Yangyang Wang;Meng Ye;Ruge Quhe;Hongxia Zhong;Zhigang Song;Xiyou Peng;Dapeng Yu;Jinbo Yang;Junjie Shi;Jing Lu |
| 27 |
Reducing Mg Acceptor Activation-Energy in Al0.83Ga0.17N Disorder Alloy Substituted by Nanoscale (AlN)5/(GaN)1 Superlattice Using MgGa d-Doping: Mg Local-Structure Effect
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期刊论文 |
Hong-xia Zhong;Jun-jie Shi;Min Zhang;Xin-he Jiang;Pu Huang;Yi-min Ding |
| 28 |
Anomalous Light Emission and Wide Photoluminescence Spectra in Graphene Quantum Dot: Quantum Confinement from Edge Microstructure
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期刊论文 |
Huang Pu;Shi Jun-jie;Zhang Min;Jiang Xin-he;Zhong Hong-xia;Ding Yi-min;Cao Xiong;Wu Meng;Lut Jing |
| 29 |
Promising photovoltaic and solid-state-lighting materials: two-dimensional Ruddlesden–Popper type lead-free halide double perovskites Csn+1Inn/2Sbn/2I3n+1 (n = 3) and Csn+1Inn/2Sbn/2Cl3n+1/Csm+1Cum/2Bim/2Cl3m+1 (n = 3,m = 1)
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期刊论文 |
Meng Wu;Jun-jie Shi;Min Zhang;Yu-lang Cen;Wen-hui Guo;Yao-hui Zhu |
| 30 |
An alternative to the spin-coupled interface resistance for describing heat generation
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期刊论文 |
Zhang Xiao-Xue;Zhu Yao-Hui;He Pei-Song;Li Bao-He |
| 31 |
Two-dimensional n-InSe/p-GeSe(SnS) van der Waals heterojunctions: High carrier mobility and broadband performance
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期刊论文 |
Cong-xin Xia;Juan Du;Xiao-wei Huang;Wen-bo Xiao;Wen-qi Xiong;Tian-xing Wang;Zhong-ming Wei;Yu Jia;Jun-jie Shi;Jing-bo Li |
| 32 |
Many-body Effect, Carrier Mobility, and Device Performance of Hexagonal Arsenene and Antimonene
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期刊论文 |
Wang Yangyang;Huang Pu;Ye Meng;Quhe Ruge;Pan Yuanyuan;Zhang Han;Zhong Hongxia;Shi Junjie;Lu Jing |
| 33 |
Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap
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期刊论文 |
Hui Wang;Jun-jieShi;Pu Huang;Yi-min Ding;Meng Wu;Yu-lang Cen;Tongjun Yu |
| 34 |
Influence of temperature and internal electric field on light emission in wurtzite GaN/AlGaN nanowire heterostructures
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期刊论文 |
Zhang M.;Shi J. J. |
| 35 |
Interfacial Properties of Monolayer and Bilayer MoS2 Contacts with Metals: Beyond the Energy Band Calculations
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期刊论文 |
Hongxia Zhong;Ruge Quhe;Yangyang Wang;Zeyuan Ni;Meng Ye;Zhigang Song;Yuanyuan Pan;Jinbo Yang;Li Yang;Lei Ming;Junjie Shi;Jing Lu |
| 36 |
Does p-type ohmic contact exist in WSe2-metal interfaces?
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期刊论文 |
Yangyang Wang;Ruo Xi Yang;Ruge Quhe;Hongxia Zhong;Linxiao Cong;Meng Ye;Zeyuan Ni;Zhigang Song;Jinbo Yang;Junjie Shi;Ju Li;Jing Lu |
| 37 |
Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m/(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation
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期刊论文 |
Xin-he Jiang;Jun-jie Shi;Min Zhang;Hong-xia Zhong;Pu Huang;Yi-min Ding;Tong-jun Yu;Bo Shen;Jing Lu;Xihua Wang |
| 38 |
Two-dimensional g-C3N4/InSe heterostructure as a novel visible-light photocatalyst for overall water splitting: a first-principles study
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期刊论文 |
Yong He;Min Zhang;Jun-Jie Shi;Yao-Hui Zhu;Yu-Lang Cen;Meng Wu;Wen-Hui Guo;Yi-Min Ding |
| 39 |
Band Gap Opening of Graphene by Forming Heterojunctions with the 2D Carbonitrides Nitrogenated Holey Graphene, g-C3N4, and g-CN: Electric Field Effect
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期刊论文 |
Cao Xiong;Shi Jun-jie;Zhang Min;Jiang Xin-he;Zhong Hong-xia;Huang Pu;Ding Yi-min;Wu Meng |
| 40 |
Improvement of p-type conductivity in Al-rich AlGaN substituted by Mg-Ga delta-doping (AlN)(m)/(GaN)(n) (m >= n) superlattice
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期刊论文 |
Jiang Xin-he;Shi Jun-jie;Zhang Min;Zhong Hong-xia;Huang Pu;Ding Yi-min;Wu Meng;Cao Xiong;Rong Xin;Wang Xinqiang |
| 41 |
Origin of Wide and Asymmetric Blue Luminescence Band in AlN Nanowires: VN, VAl, ON and 3ON-VAl Surface Defects
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期刊论文 |
Yi-min Ding;Jun-jie Shi;Min Zhang;Xin-he Jiang;Hong-xia Zhong;Pu Huang;Ying-ping He;Xiong Cao |
| 42 |
Performance Upper Limit of sub-10 nm Monolayer MoS2 Transistors
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期刊论文 |
Ni Zeyuan;Ye Meng;Ma Jianhua;Wang Yangyang;Quhe Ruge;Zheng Jiaxin;Dai Lun;Yu Dapeng;Shi Junjie;Yang Jinbo;Watanabe Satoshi;Lu Jing |
| 43 |
Enhancement of photoluminescence and hole mobility in 1- to 5-layer InSe due to the top valence-band inversion: strain effect
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期刊论文 |
Meng Wu;Jun-jie Shi;Min Zhang;Yi-min Ding;Hui Wang;Yu-lang Cen;Jing Lu |
| 44 |
High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure
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期刊论文 |
Rong Xin;Wang Xinqiang;Ivanov Sergey V.;Jiang Xinhe;Chen Guang;Wang Ping;Wang Weiying;He Chenguang;Wang Tao;Schulz Tobias;Albrecht Martin;Jmerik Valentin N.;Toropov Alexey A.;Ratnikov Viacheslav V.;Kozlovsky Vladimir I.;Martovitsky Victor P.;Jin Peng;Xu Fujun;Yang Xuelin;Qin Zhixin;Ge Weikun;Shi Junjie;Shen Bo |
| 45 |
Mechanisms of Spin-Dependent Heat Generation in Spin Valves
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期刊论文 |
Zhang Xiao-Xue;Zhu Yao-Hui;He Pei-Song;Li Bao-He |
