随机离散掺杂对纳米CMOS电路影响的快速Pearson IV统计方法及片上抑制技术

61571171
2015
F0118.电路与系统
吕伟锋
面上项目
副教授
杭州电子科技大学
57万元
电路设计建模;电路仿真;电路设计自动化;统计模型
2016-01-01到2019-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 A GaN/InGaN/AlGaN MQW RTD for versatile MVL applications with improved logic stability 期刊论文 Haipeng Zhang;Qiang Zhang;Mi Lin;Weifeng Lü
2 随机栅长变化引起纳米MOSFET失配模型 期刊论文 吕伟锋;王光义;林弥;孙玲玲
3 金属栅功函数变异对纳米MOSFET模拟/射频性能影响的统计分析 期刊论文 薛佳帆;戴良;陈霖凯;吕伟锋
4 Random Dopant Fluctuation-Induced Variability in n-Type Junctionless Dual-Metal Gate FinFETs 期刊论文 Liang Dai;Weifeng Lü;Mi Lin
5 High voltage ingan/gan/algan RTD suitable for esd protection applications of gan/ingan-based devices and ics validated by simulation Results 会议论文 Zhang Haipeng;Geng Lu;Lin Mi;Zhang Zhonghai;Lü Weifeng
6 具有滞回特性RTD开关单元的分析研究与设计 期刊论文 潘文剑;林弥;吕伟锋
7 Impact of work-function variation on analog figures-of-merits for high-k/metal-gate junctionless FinFET and gate-all-around nanowire MOSFET 期刊论文 Wei-Feng Lü;Liang Dai
8 Impact of Correlation on Gate Capacitance Variability Due to Random Dopant Fluctuation and Work-Function Variation in Nanometer Metal-Oxide- Semiconductor-Field-Effect-Transistors 期刊论文 Wei-Feng Lü;Liang Dai;Guang-Yi Wang;Mi Lin
9 Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS 期刊论文 W. F. Lü;L. Dai;Z. F. Zhao;M. Lin
10 Analytical Modeling of Threshold Voltage and Drain-Induced-Barrier-Lowering Variations Due to Gate Length Fluctuation in Nanometer MOSFETs 期刊论文 Lü Weifeng;Wang Guangyi;Lin Mi;Sun Lingling
11 Investigation on gate capacitances fluctuation due to work-function variation in metal-gate FinFETs 会议论文 Wei-Feng LÜ;Mi LIN;Hai-peng ZHANG
12 Degeneration of Line-Edge Roughness-Induced Variability for Dual-Metal Gate Fin Field-Effect Transistors 期刊论文 Liang Dai;Wei-Feng Lü
13 Statistical Modeling of Gate Capacitance Variations induced by random dopants in nanometer MOSFETs Reserving Correlations 期刊论文 LÜ Wei-Feng;WANG Guang-Yi;LIN Mi;SUN Ling-Ling
14 Impact of ferroelectric layer thickness on negative capacitance MOSFETs 会议论文 Wei-Feng LÜ;Liang DAI;Mi LIN;Hai-peng ZHANG
15 Model and Performance for Nanometer MOSFET Device and Current Mirror Circuit Considering Random Dopant Fluctuation 期刊论文 Wei-Feng Lü;Guang-Yi Wang;Mi Lin;Ling-Ling Sun
16 Analysis and Modeling of Drain-Induced Barrier Lowering Variation Induced by Random Dopants in Nanometer MOSFET Channel 期刊论文 Wei-Feng Lü∗;Guang-Yi Wang;Ling-Ling Sun
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