忆阻现象中一些基础物理问题的研究

11174135
2011
A2014.凝聚态物理新兴与交叉领域
夏奕东
面上项目
教授
南京大学
74万元
忆阻;电荷诱导相变;微结构演化;突触学习功能;弛豫
2012-01-01到2015-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 The chemically driven phase transformation in a memristive abacus capable of calculating decimal fractions 期刊论文 Yin, Qiaonan|Yin, Jiang|Sun, Litao|Liu, Zhiguo|
2 Memristive learning and memory functions in polyvinyl alcohol polymer memristors 期刊论文 Xu, B|Wang, SD|Yin, J|Liu, ZG|
3 Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO3/La0.67Sr0.33MnO3 heterostructure 期刊论文 Yin, Qiaonan|Xia, Yidong|Yin, Jiang|Liu, Zhiguo|
4 TixSb2Te Thin Films for Phase Change Memory Applications 期刊论文 Xu, HN|Xia, YD|Yin, J|Liu, ZG|
5 High-k-rare-earth-oxide Eu2O3 films for transparent resistive random access memory (RRAM) devices 期刊论文 Zhang, Weifeng|Yin, Jiang|Xia, Yidong|Liu, Zhiguo|
6 Cathode bubbles induced by moisture electrolysis in TiO2？x-based resistive switching cells 期刊论文 Yidong Xia|Bo Xu|Jiang Yin|Zhiguo Liu|
7 Conduction mechanism of resistance switching in fully transparent MgO-based memory devices 期刊论文 Jiang Yin|Yidong Xia|Weifeng Zhang|Zhiguo Liu|
8 TixSb2Te Thin Films for Phase Change Memory Applications 期刊论文 Xu Han-Ni|Xia Yi-Dong|Yin Jiang|Liu Zhi-Guo|
9 Bipolar resistance switching in the fully transparent BaSnO3-based memory device 期刊论文 Zhao, GF|Zhang, WF|Xia, YD|Liu, ZG|
10 Conduction mechanism of resistance switching in fully transparent MgO-based memory devices 期刊论文 Yin, Jiang|Xia, Yidong|Zhang, Weifeng|Liu, Zhiguo|
11 Large electrocaloric effect in Ba(Ti1-xSnx)O-3 ceramics over a broad temperature region 期刊论文 Xu, B.|Xia, Y. D.|Yin, J.|Liu, Z. G.|
12 Heating power lowering by down-scaling the cell dimensions in nanoscale filamentary resistive switching devices 期刊论文 Yidong Xia|Bo Xu|Jiang Yin|Zhiguo Liu|
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