基于低频噪声分析的电荷陷阱存储器可靠性研究
61306106
2013
F0404.半导体电子器件与集成
杨潇楠
青年科学基金项目
副教授
郑州大学
25万元
可靠性;电荷俘获存储器;低频噪声
2014-01-01到2016-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Gate Bias Dependence of Complex Random Telegraph Noise Behavior in 65nm NOR Flash Memory | 期刊论文 | Zongliang Huo|Lei Jin|Dandan Jiang|Ming Liu| |
| 2 | HIGH-THROUGHPUT AND LABEL-FREE PARASITEMIA QUANTIFICATION AND STAGE DETERMINATION FOR PLASMODIUM FALCIPARUM-INFECTED RED BLOOD CELLS | 会议论文 | Gihoon Choi|Jun Miao|Liwang Cui|Weihua Guan| |
| 3 | PROGRAM CHARGE EFFECT ON RANDOM TELEGRAPH NOISE BEHAVIOR IN MULTI-LEVEL FLOATING GATE FLASH MEMORY | 会议论文 | Zhongyong Wang|Dandan Jiang|Yan Wang|Ming Liu| |
| 4 | A Study of P/E Cycling Impaction on Drain Disturb for 65nm NOR Flash Memories by Low Frequency Noise Analyze | 期刊论文 | Xiaonan Yang|Zongliang Huo|Zongyong Wang|Ming Liu| |
| 5 | Threshold Voltage Dependence of Random Telegraph Noise in 65 nm Floating Gate MLC Memories | 期刊论文 | Wenbing Fan|Yaping Wang|Haoliang Li|Xiaonan Yang| |
| 6 | Extraction of Position and Energy Level of Oxide Trap Generating Random Telegraph Noise in 65nm NOR Flash Memory | 期刊论文 | Yan Wang|Dandan Jiang|Wenbing Fan|Ming Liu| |
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