极化电场对III-V族氮化物半导体发光二极管载流子输运及器件内量子效率影响的研究

51502074
2015
E0207.无机非金属半导体与信息功能材料
张紫辉
青年科学基金项目
教授
河北工业大学
20万元
极化电场;异质外延;发光二极管;III-V族半导体材料;内量子效率
2016-01-01到2018-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 提高AlGaN基深紫外发光二极管空穴注入效率若干途径的研究 期刊论文 田康凯;楚春双;毕文刚;张勇辉;张紫辉
2 On the AlxGa1-xNAlyGa1-yNAlxGa1-xN (xy) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes 期刊论文 Chu Chunshuang;Tian Kangkai;Fang Mengqian;Zhang Yonghui;Li Luping;Bi Wengang;Zhang Zi-Hui
3 Structural design and optimization of deep ultraviolet light-emitting diodes with AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer 期刊论文 Chunshuang Chu;Kangkai Tian;Mengqian Fang;Yonghui Zhang;Songhan Zao;Wengang Bi;Zi-Hui Zhang
4 一种LED的芯片结构及其制备方法 专利 张紫辉;张勇辉;毕文刚;徐庶;耿翀
5 Versatile nanosphere lithography technique combining multiple-exposure nanosphere lens lithography and nanosphere template lithography 期刊论文 Yonghui Zhang;Zihui Zhang;Chong Geng;Shu Xu;Tongbo Wei;Wen'gang Bi
6 On the internal quantum efficiency for InGaN/GaN light-emitting diodes grown on insulating substrates 期刊论文 Zhang Zi-Hui;Zhang Yonghui;Bi Wen Gang;Hilmi Volkan Demir;Sun Xiao Wei
7 Manipulation of Si doping concentration for modification of the electric field and carrier injection for AlGaN-based deep ultraviolet light-emitting diodes 期刊论文 Mengqian Fang;Kangkai Tian;Chunshuang Chu;Yonghui Zhang;Zi-Hui Zhang;Wengang Bi
8 A charge inverter for III-nitride light-emitting diodes 期刊论文 Zhang Zi-Hui;Zhang Yonghui;Bi Wen Gang;Geng Chong;Xu Shu;Hilmi Volkan Demir;Sun Xiao Wei
9 On the electric-field reservoir for III-nitride based deep ultraviolet light-emitting diodes 期刊论文 Zhang Zi-Hui;Li Luping;Zhang Yonghui;Xu Fujun;Shi Qiang;Shen Bo;Bi Wengang
10 GaN/InxGa1-xN型最后一个量子势垒对发光二极管内量子效率的影响 期刊论文 时强;李路平;张勇辉;张紫辉;毕文刚
11 Hole Accelerator for III-Nitride Light-Emitting Diodes 专著 Zhang Zi-Hui;Zhang Yonghui;Sun Xiaowei;Bi Wengang
12 On the carrier transport for InGaN/GaN core-shell nanorod green light-emitting diodes 期刊论文 Jianquan Kou;Sung-Wen Huang Chen;Jiamang Che;Hua Shao;Chunshuang Chu;Kangkai Tian;Yonghui Zhang;Wengang Bi;Zi-Hui Zhang;Hao-Chung Kuo
13 Enhancing both TM- and TE-polarized light extraction efficiency of AlGaN-based deep ultraviolet light-emitting diode via air cavity extractor with vertical sidewall 期刊论文 Yonghui Zhang;Yuxin Zheng;Ruilin Meng;Ce Sun;Kangkai Tian;Chong Geng;Zi-Hui Zhang;Guoxu Liu;Wengang Bi
14 On the hole accelerator for III-nitride light-emitting diodes 期刊论文 Zhang Zi-Hui;Zhang Yonghui;Bi Wen Gang;Geng Chong;Xu Shu;Hilmi Volkan Demir;Sun Xiao Wei
15 具有P-型欧姆接触层的发光二极管外延结构 专利 张紫辉;张勇辉;毕文刚;徐庶;耿翀
16 Establishment of the relationship between the electron energy and the electron for AlGaN based ultraviolet light-emitting diodes 期刊论文 Zi-Hui Zhang;Kangkai Tian;Chunshuang Chu;Mengqian Fang;Yonghui Zhang;Wengang Bi;Hao-Chung Kuo
17 Increasing the hole energy by grading the alloy composition of the p-type electron blocking layer for very high-performance deep ultraviolet light-emitting diodes 期刊论文 Zhang Zi-Hui;Kou Jianquan;Huang Chen Sung-Wen;Che Jiamang;Chu Chunshuang;Tian Kangkai;Zhang Yonghui;Bi Wengang;Kuo Hao-Chung
18 On the polarization effect of the p-EBL/p-AlGaN/p-GaN structure for AlGaN-based deep-ultraviolet light-emitting diodes 期刊论文 Kangkai Tian;Chunshuang Chu;Hua Shao;Jiamang Che;Jianquan Kou;Mengqian Fang;Yonghui Zhang;Wengang Bi;Zi-Hui Zhang
19 一种氮化物发光二极管芯片的制备方法 专利 张紫辉;张勇辉;毕文刚;徐庶;耿翀
20 On the light extraction efficiency for III-nitride based light emitting diodes 专著 Zi-Hui Zhang;Yonghui Zhang;Sung-Wen Chen Huang;Wengang Bi;Hao-Chung Kuo
21 一种基于h-BN隧穿结为空穴注入层的发光二极管外延结构 专利 张紫辉;李路平;田康凯;楚春双;张勇辉;毕文刚
22 具有电子能量调节层的发光二极管外延结构 专利 张紫辉;张勇辉;毕文刚;徐庶;耿翀
23 Advanced Progress on the External Quantum Efficiency for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes 期刊论文 Chunshuang Chu;Kangkai Tian;Yonghui Zhang;Wengang Bi;Zi-Hui Zhang
24 Nearly efficiency-droop-free AlGaN based ultraviolet light-emitting diodes with a specifically designed superlattice p-type electron blocking layer for high Mg doping efficiency 期刊论文 Zi-Hui Zhang;Sung-Wen Huang Chen;Chunshuang Chu;Kangkai Tian;Mengqian Fang;Yonghui Zhang;Wengang Bi;Hao-Chung Kuo
25 On the importance of the polarity for GaN/InGaN last quantum barriers in III-nitride based light-emitting diodes 期刊论文 Zhang Zi-Hui;Zhang Yonghui;Li Hongjian;Xu Shu;Geng Chong;Bi Wen Gang
26 On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes 期刊论文 Li Luping;Zhang Yonghui;Xu Shu;Bi Wengang;Zhang Zi-Hui;Kuo Hao-Chung
27 Numerical Investigations on the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-Nitride UV Light-Emitting Diodes 期刊论文 Li Luping;Zhang Yonghui;Tian Kangkai;Chu Chunshuang;Fang Mengqian;Meng Ruilin;Shi Qiang;Zhang Zi-Hui;Bi Wengang
28 Hole Transport Manipulation To Improve the Hole Injection for Deep Ultraviolet Light-Emitting Diodes 期刊论文 Zhang Zi-Hui;Chen Huang Sung-Wen;Zhang Yonghui;Li Luping;Wang Sheng-Wen;Tian Kangkai;Chu Chunshuang;Fang Mengqian;Kuo Hao-Chung;Bi Wengang
29 Investigations on AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes With Si-Doped Quantum Barriers of Different Doping Concentrations 期刊论文 Tian Kangkai;Chen Qian;Chu Chunshuang;Fang Mengqian;Li Luping;Zhang Yonghui;Bi Wengang;Chen Changqing;Zhang Zi-Hui;Dai Jiangnan
30 具有超晶格隧穿结的发光二极管外延结构及其制备方法 专利 张紫辉;田康凯;楚春双;方梦倩;李路平;张勇辉
31 Influence of an Insulator Layer on the Charge Transport in a Metal/Insulator/n-AlGaN Structure 期刊论文 Shao Hua;Che Jiamang;Kou Jianquan;Chu Chunshuang;Tian Kangkai;Fang Mengqian;Zhang Yonghui;Bi Wengang;Zhang Zi-Hui
32 Internal quantum efficiency for III-nitride based blue light-emitting diodes 专著 Zhang Zi-Hui;Zhang Yonghui;Hilmi Volkan Demir;Sun Xiaowei
33 UVA light-emitting diode grown on Si substrate with enhanced electron and hole injections 期刊论文 Zhang Zi-Hui;Chu Chunshuang;Chiu Ching Hsueh;Lu Tien Chang;Li Luping;Zhang Yonghui;Tian Kangkai;Fang Mengqian;Sun Qian;Kuo Hao-Chung;Bi Wengang
34 Effects of inclined sidewall structure with bottom metal air cavity on the light extraction efficiency for AlGaN-based deep ultraviolet light-emitting diodes 期刊论文 Yonghui Zhang;Ruilin Meng;Zi-Hui Zhang;Qiang Shi;Luping Li;Guoxu Liu;Wengang Bi
35 具有空穴能量调节层的发光二极管外延结构 专利 张紫辉;张勇辉;毕文刚;徐庶;耿翀
36 A dielectric-controlling tunnel junction for III-nitride light-emitting diodes 期刊论文 Luping Li;Yonghui Zhang;Qiang Shi;Kangkai Tian;Chunshuang Chu;Mengqian Fang;Ruiling Meng;Zi-Hui Zhang;Wengang Bi
37 Deep ultraviolet LEDs – understanding the low external quantum efficiency 专著 Zi-Hui Zhang;Chunshuang Chu;Kangkai Tian;Yonghui Zhang
38 On the p-AlGaN/n-AlGaN/p-AlGaN current spreading layer for AlGaN-based deep ultraviolet light-emitting diodes 期刊论文 Jiamang Che;Chunshuang Chu;Kangkai Tian;Jianquan Kou;Hua Shao;Yonghui Zhang;Wengang Bi;Zi-Hui Zhang
39 一种深紫外半导体发光二极管及其制备方法 专利 张勇辉;张紫辉;徐庶;耿翀;毕文刚;花中秋
40 具有双层微纳米阵列结构的LED图形化衬底的制作方法 专利 张勇辉;毕文刚;张紫辉;徐庶;耿翀
41 具有低折射率微纳结构层的LED图形化衬底的制备方法 专利 张勇辉;毕文刚;张紫辉;徐庶;耿翀
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