【60601003】面向新型铁电DRAM的关键材料及MFIS界面特性研究国家自然基金项目

面向新型铁电DRAM的关键材料及MFIS界面特性研究

项目批准号： 60601003

批准年份： 2006

学科分类： F0122.物理电子学

项目负责人：谢丹

资助类别：青年科学基金项目

负责人职称：副研究员

依托单位：清华大学

资助金额： 27万元

关键词： Bi4-xNdxTi3O12;FEDRAM;铁电薄膜;MFIS;隔离层

起止时间： 2007-01-01到2009-12-31

中英文摘要
结题摘要
结题报告
项目成果
项目参与人

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序号	标题	类型	作者
1	Structural, ferroelectric, dielectric, and magnetic properties of BiFeO3 / Bi3.15 Nd0.85 Ti3 O 12 multilayer films derived by chemical solution deposition	期刊论文	Zang, Yongyuan\|Ren, Tianling\|Xie, Dan\|Luo, Yafeng\|Liu, Litian\|Han, Xueguang\|
2	铁酸铋/钛酸铋叠层结构电容及其制备方法	专利	谢丹; 任天令; 臧永圆; 刘理天
3	MOCVD制备PZT薄膜技术研究	期刊论文	任天令\|林惠旺\|阮勇\|谢丹\|刘理天\|
4	Comparison of PbZr1-xTixO3 thin films deposited on different substrates by liquid delivery metal organic chemical vapor deposition	期刊论文	Zhang, Mingming\|Ruan, Yong\|Ren, Tianling\|Liu, Litian\|Xie, Dan\|Li, Rui\|
5	M/Bi3.4La0.6Ti3O12/I/Si capacitors for the application in FEDRAM	会议论文	Ren, Tianling\|Liu, Litian\|Xie, Dan\|
6	FABRICATION AND PROPERTIES OF METAL-PZT-METAL CAPACITORS BY LIQUID DELIVERY MOCVD	期刊论文	Ruan, Yong\|Ren, Tian Ling\|Li, Rui\|Han, Xueguang\|Liu, Li Tian\|Xie, Dan\|
7	用于铁电存储器的掺钕钛酸铋铁电薄膜及其低温制备方法	专利	谢丹; 任天令; 薛堪豪; 刘天志; 张志刚; 刘理天
8	Buffer Layer Dependence of B3.15Nd0.85Ti3O12 (BNdT) Based MFIS Capacitor for FeFET Application	会议论文	Ren, Tianling\|Zang, Yongyuan\|Luo, Yafeng\|Song, Rui\|Liu, Litian\|Xie, Dan\|
9	Interface studies and electronic properties of silicon based nd-doped bismuth titanate	期刊论文	Liu, Litian\|Zang, Yongyuan\|Ren, Tianling\|Ruan, Yong\|Xie, Dan\|Xiao, Yehui\|
10	PZT薄膜的MOCVD制备技术	期刊论文	刘理天\|阮勇\|任天令\|林惠旺\|谢丹\|
11	Inducing effect of Pb(Zr0.4Ti0.6)O3 thin film derived by different processes in BiFeO3/Pb(Zr 0.4Ti0.6)O3 multilayer capacitor at room temperature	期刊论文	Liu, Litian\|Dang, Zhimin\|Zang, Yongyuan\|Xie, Dan\|Ren, Tianling\|Luo, Yafeng\|
12	Optical characterization of sr1-xbaxbi4ti4o15 graded thin films	期刊论文	Ren, Tianling\|Liu, Litian\|Zang, Yongyuan\|Xie, Dan\|
13	Nitrogen-rich titanium nitride serving as pt-al diffusion barrier for feram application	期刊论文	Liu, Li-Tian\|Jia, Ze\|Xie, Dan\|Zhang, Ming-Ming\|Xue, Kan-Hao\|Ren, Tian-Ling\|
14	Characterization of Pt/Bi3.15Nd0.85Ti 3O12/HfO2/Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors	期刊论文	Liu, Litian\|Luo, Yafeng\|Ren, Tianling\|Han, Xueguang\|Xie, Dan\|
15	Etching behavior and damage rejuvenation of top electrode and Bi 3:15Nd0:85Ti3O12 films applied in ferroelectric random access memory devices	期刊论文	Xie, Dan\|Xue, Kanhao\|Ren, Tianling\|Liu, Litian\|Yu, Wenkao\|Luo, Yafeng\|
16	Enhanced ferroelectric properties of BiFeO3/Bi 3.15Nd0.85Ti3O12 multilayer capacitors at room temperature applied in dielectric devices	会议论文	Yafeng, Luo\|Ren, Tianling\|Xie, Dan\|Zang, Yongyuan\|Liu, Litian\|
17	Microstructure and dielectric properties of Nd-doped bismuth titanate	期刊论文	Zang, Yongyuan\|Xiao, Yehui\|Ruan, Yong\|Ren, Tianling\|Liu, Litian\|Xie, Dan\|
18	The influence of film thickness and process temperature on c-axis orientation of Bi3TiTaO9 thin films	期刊论文	Ren, Tianling\|Zhang, Zhigang\|Xie, Dan\|Liu, Litian\|
19	Inducing layer dependence of BiFeO3 based multilayer capacitors	会议论文	Song, Rui\|Liu, Litian\|Ren, Tianling\|Zang, Others Yongyuan\|Xie, Dan\|Luo, Yafeng\|
20	控制MOCVD淀积PZT的先驱体溶液配置方法	专利	阮勇; 谢丹; 任天令; 刘理天; 林惠旺

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