SiC槽栅型功率器件可靠性研究与器件结构设计
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | New power MOSFET with beyond-1D-limit RSP-BV trade-off and superior reverse recovery characteristics | 期刊论文 | Meng Zhang;Baikui Li;Jin Wei |
2 | 一种具有栅介质保护区的新型碳化硅平面 型IGBT | 专利 | 张蒙;李腾;黄艺;张亚民;孟宪伟;温茜;郭春生;冯士维 |
3 | Investigation of electrical contacts to p-grid in SiC power devices based on charge storage effect and dynamic degradation | 期刊论文 | Meng Zhang;Baikui Li;Mengyuan Hua;Jin Wei |
4 | A new SiC planar-gate IGBT for injection enhancement effect and low oxide field | 期刊论文 | Meng Zhang;Baikui Li;Zheyang Zheng;Xi Tang;Jin Wei |
5 | Exploring SiC planar IGBTs towards enhanced conductivity modulation comparable to SiC trench IGBTs | 期刊论文 | Meng Zhang;Baikui Li;Jin Wei |