宽带隙功率微波器件陷阱与缺陷原位表征技术及相关退化机理研究
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | Evaluation of the Schottky Contact Degradation on the Temperature Transient Measurements in GaN HEMTs | 期刊论文 | Zheng Xiang;Feng Shiwei;Zhang Yamin;Li Jingwei |
2 | A current-transient method for identifying the spatial positions of traps in GaN-based HEMTs | 期刊论文 | Xiang Zheng;Shiwei Feng;Yamin Zhang |
3 | A voltage-transient methodology for characterizing traps in GaN HEMTs | 期刊论文 | Xiang Zheng;Shiwei Feng;Yifu Gao;Yamin Zhang;Yunpeng Gao;Shijie Pan |
4 | 一种采用源漏短接减少HEMT热阻测量自激振荡的方法和装置 | 专利 | 冯士维;李轩;高一夫;白昆;肖宇轩;张亚民 |
5 | 一种利用瞬态电压响应表征GaNHEMT器件中陷阱参数的方法 | 专利 | 冯士维;郑翔;张亚民;何鑫;李轩;白昆;潘世杰 |
6 | Effect of two-dimensional electron gas on horizontal heat transfer in AlGaN/AlN/GaN heterojunction transistors | 期刊论文 | Zheng Xiang;Feng Shiwei;Zhang Yamin;Jia Yunpeng |
7 | Junction Temperature Measurement Method for SiC Bipolar Junction Transistor Using Base-Collector Voltage Drop at Low Current | 期刊论文 | Bangbing Shi;Shiwei Feng;Yamin Zhang;Kun Bai;Yuxuan Xiao;Lei Shi;Hui Zhu;Chunsheng Guo |