二次外延AlGaN势垒层的增强型p-gate GaN HEMT新结构研究

61904207
2019
F0404.半导体电子器件与集成
何亮
青年科学基金项目
其他副高级工程师
工业和信息化部电子第五研究所
26万元
氮化镓;p型栅;二次外延;增强型;HEMT
2020-01-01到2022-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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重置
序号 标题 类型 作者
1 Quasi-vertical diamond temperature sensor by using Schottky-pn junction structure diode 期刊论文 W. Xie;Liang He;Y. Ni;G. Li;Q. Wang;S. Cheng;L. Li
2 Correlating Device Behaviors with Semiconductor Lattice Damage at MOS Interface by Comparing Plasma-etching and Regrown Recessed-gate Al2O3/GaN MOS-FETs 期刊论文 Liang He;Liuan Li;Fan Yang;Yue Zheng;Jialin Zhang;Taotao Que;Zhenxing Liu;Jinwei Zhang;Qianshu Wu;Yang Liu
3 氮化镓基互补型逻辑电路研究进展及挑战 期刊论文 张彤;刘树强;何亮;成绍恒;李柳暗;敖金平
4 METHOD AND APPARATUS FOR FAULT ISOLATION, COMPUTER DEVICE, MEDIUM AND PROGRAM PRODUCT 专利 Chao Pang;Yiqiang Ni;Shizheng Yang;Xuanlong Chen;Liang He;Zhixin Zhang;Yufeng Liu
5 ENHANCEMENT-MODE SEMICONDUCTOR DEVICE AND PREPARATION METHOD THEREFOR 专利 Yang Liu;Liang He
6 Vertical GaN Schottky barrier diodes with area-selectively deposited p-NiO guard ring termination structure 期刊论文 J. Zhou;Liang He;X. Li;T. Pu;L. Li;J.Ao
7 Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator 期刊论文 T. Pu;S. Liu;X. Li;T. Wang;J. Du;L. Li;Liang He;X. Liu;J. Ao
8 A review of selective area grown recess structure for insulated-gate E-mode GaN transistors 期刊论文 Liang He;Fan Yang;Yao Yao;Yue Zheng;Jialin Zhang;Liuan Li;Zhiyuan He;Yiqiang Ni;Xin Gu;Yang Liu
9 失效点的定位方法、装置、计算机设备、介质和程序产品 专利 庞超;倪毅强;杨施政;陈选龙;何亮;张志鑫;刘宇锋
10 Threshold Voltage Engineering in Al2O3/AlGaN/GaN MISHEMTs with Thin Barrier Layer: MIS-gate Charge Control and High Threshold Voltage Achievement 会议论文 Liang He;Liuan Li;Jialin Zhang;Yiqiang Ni;Jinwei Zhang;Zhenxing Liu;Qianshu Wu;Yang Liu
11 Charge Control in Schottky-Type p-GaN Gate HEMTs With Partially and Fully Depleted p-GaN Conditions 期刊论文 Qianshu Wu;Jia Chen;Liang He;Jinwei Zhang;Qiuling Qiu;Chenliang Feng;Liuan Li;Taotao Que;Zhenxing Liu;Zhisheng Wu;Zhiyuan He;Yang Liu
12 一种具有高可靠性的氮化物器件及其制备方法 专利 刘扬;何亮
13 一种Ⅲ族氮化物的增强型HEMT的制备方法 专利 刘扬;张津玮;何亮
14 封装器件的失效定位方法 专利 倪毅强;石高明;张志鑫;杨施政;何亮
15 集成电路失效点的定位方法 专利 倪毅强;庞超;杨施政;陈选龙;何亮;张志鑫;刘宇锋
16 芯片去层调节装置及制样方法 专利 刘加豪;杨施政;杜伟平;倪毅强;何亮;张志鑫;肖慧;赵振博
17 Impact of dislocation pits on device performances and interface quality degradation for E-mode recessed-gate Al2O3/GaN MOSFETs 期刊论文 Liang He;Liuan Li;Taotao Que;Jinwei Zhang;Chenliang Feng;Zhenxing Liu;Qianshu Wu;Jia Chen;Qiuling Qiu;Yapeng Wang;Chenglang Li;Qi Zhang;Yang Liu
18 Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiNx gate dielectric 期刊论文 Yawen Zhao;Liuan Li;Taotao Que;Qiuling Qiu;Liang He;Zhenxing Liu;Jinwei Zhang;Qianshu Wu;Jia Chen;Zhisheng Wu;Yang Liu
19 Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor 期刊论文 Liang He;Y. Ni;L. Li;Z. He;X. Li;T. Pu;J. Ao
20 Design of normally-off p-GaN/AlGaN/GaN Heterojunction Field-Effect Transistors with re-grown AlGaN barrier 期刊论文 X. Han;W. Lin;Q. Wang;S. Cheng;Liang He;L. Li
21 一种增强型半导体器件及其制备方法 专利 刘扬;何亮
22 电子元器件寿命预测方法、装置、计算机设备和存储介质 专利 刘树强;何亮;余思达;蔡金宝
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