AlN/GaN 异质结场效应晶体管中与应变分布相关的载流子散射机理研究

61306113
2013
F0405.半导体器件物理
吕元杰
青年科学基金项目
副研究员
中国电子科技集团公司第十三研究所
25万元
场效应晶体管;AlN/GaN异质结;应变分布;散射机理;电子迁移率
2014-01-01到2016-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
查看更多信息请先登录或注册
查看更多信息请先登录或注册
查看更多信息请先登录或注册
重置
序号 标题 类型 作者
1 fT/fmax＞150/210 GHz AlGaN/GaN HFETs with regrown n+-GaN Ohmic contactsby MOCVD 期刊论文 Hongyu Guo|Yulong Fang|Xingye Zhou|Shujun Cai|
2 Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD 期刊论文 Liu Bo(刘波), Yin Jiayun(尹甲运), L？ Yuanjie(吕元杰), Dun|Cai Shujun(蔡树军)|
3 Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors 期刊论文 Xubo Song|Yuangang Wang|Yulong Fang|Zhihong Feng|
4 High-frequency AlGaN/GaN HFETs with fT/fmax of 149/263 GHz for D-band PA applications 期刊论文 Xubo Song|Hongyu Guo|Yulong Fang|Zhihong Feng|
5 Simulation study of GaN-based HFETs with graded AlGaN barrier 期刊论文 Xin Tan|Xubo Song|Jiayun Yin|Shujun Cai|
6 Modified model of gate leakage currents in AlGaN/GaN HEMTs 期刊论文 Xin Tan|Shaobo Dun|Yulong Fang|Shujun Cai|
7 Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistor 期刊论文 Xingye Zhou|Zhaojun Lin|Ziwu Ji|Shujun Cai|
8 Ti/Al Based Ohmic Contact to As-Grown N-Polar GaN 期刊论文 FENG Zhi-Hong(冯志红), WANG Xian-Bin*(王现彬), WANG Li#|
9 The influence of the AlN barrier thickness on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Tingting Han|Jiayun Yin|Bo Liu|Shujun Cai|
10 Improved performance of Scaled AlGaN/GaN HFETs by recessed gate 会议论文 Zhirong Zhang|Xin Tan|Yulong Fang|Zhihong Feng|
11 Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors 期刊论文 Chen Fu|Yuanjie Lv|Zhihong Feng|Chongbiao Luan|
12 Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes 期刊论文 Xubo Song|Shujun Cai|Chongbiao Luan|Zhaojun Lin|
13 Effect of the side-Ohmic contact processing on the polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Yang Ming|Zhou Yang|Lv Yuanjie|Feng Zhihong|
14 Temperature influence on strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors 期刊论文 Yuangang Wang|Peng Xu|Xubo Song|Shujun Cai|
查看更多信息请先登录或注册

相关项目

趋势报告

经验分享