基于二元金属氧化物的自整流阻变存储器及其物理机制研究
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | 阻变存储器无源高密度交叉阵列研究进展 | 期刊论文 | 李晓燕;李颖弢;高晓平;陈传兵;韩根亮 |
2 | Stable resistive switching characteristics of ZrO2-based memory device with low-cost | 期刊论文 | Fu Liping;Li Yingtao;Han Genliang;Gao Xiaoping;Chen Chuanbing;Yuan Peng |
3 | Improved Resistive Switching Uniformity of SiO2 Electrolyte-Based Resistive Random Access Memory Device With Cu Oxidizable Electrode | 期刊论文 | Li Yingtao;Yin Lujie;Wu Zewei;Li Xiaoyan;Song Xiaoqiang;Gao Xiaoping;Fu Liping |
4 | Impact of resistive switching parameters on resistive random access memory crossbar arrays | 期刊论文 | Fu Liping;Chen Sikai;Wu Zewei;Li Xiaoyan;You Mingyang;Fan Xiaolong;Gao Xiaoping;Li Yingtao |
5 | Resistive switching behaviors mediated by grain boundaries in one longitudinal Al/MoS2&PVP/ITO device | 期刊论文 | Bai Na;Xu Min;Hu Cong;Ma Yaodong;Wang Qi;He Deyan;Qi Jing;Li Yingtao |
6 | Self-compliance multilevel storage characteristic in HfO2-based device | 期刊论文 | Gao Xiao-Ping;Fu Li-Ping;Chen Chuan-Bing;Yuan Peng;Li Ying-Tao |