铁电栅场效应晶体管存储器的单粒子效应研究

61274107
2012
F0406.集成电路器件、制造与封装
唐明华
面上项目
教授
湘潭大学
90万元
SPICE建模;抗单粒子加固;单粒子效应;FeFET存储器;辐照损伤机理
2013-01-01到2016-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 A backscatter link frequency algorithm with high stability for passive UHF RFID tags 会议论文 M. H. Tang|L. Yang|C. Li|C. W. Su|
2 Design and Simulation of FeFET-Based Lookup Table 期刊论文 M. H. Tang|Y. Qin|Z. Li|Y. C. Zhou|
3 Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor 期刊论文 H. X. Guo|H. Ding|J. W. Chen|Y. C. Zhou|
4 Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor 期刊论文 Z. Li|Y. G. Xiao|W. L. Zhang|Z. F. Lei|
5 Effects of drain-wall in mitigating N-hit single event transient via 45-nm CMOS process 期刊论文 W. L. Zhang|W. Zhao|H. X. Guo|Z. Li|
6 Radiation hardened by design techniques to mitigating P-hit single event transient 会议论文 M. H. Tang|S. A. Yan|W. L. Zhang|Y. L. Yin|
7 A Si tunnel field-effect transistor model with a high switching current ratio and steep sub-threshold swing 期刊论文 X. Y. Xu|S. E. Liang|X. H. Zhong|J. H. He|
8 Proton radiation damage in SrTiO3 thin film by computer simulation 期刊论文 M. H. Tang|Y. G. Xiao|S. A. Yan|Y. C. Zhou|
9 Impact of total ionizing dose irradiation on Pt/SrBi2Ta2O9/HfTaO/Si memory capacitors 期刊论文 W. L. Zhang|H. Ding|J. W. Chen|Y. C. Zhou|
10 Ionizing radiation effect on metal-ferroelectric-insulator-semiconductor memory capacitors 期刊论文 Y. G. Xiao|W. L. Zhang|Z. F. Lei|Y. C. Zhou|
11 A continuously and widely tunable 5 dB-NF 89.5 dB-Gain 85.5 dB-DR CMOS TV receiver with digitally-assisted calibration for multi-standard DBS applications 期刊论文 X. C. Gu|H. Y. Wang|M. H. Tang|Z. W. Zhuang|
12 Novel Graphene Field Effect Transistor with BNTM Ferroelectric Gate 会议论文 X. D. Wang|S. A. Yan|X. H. Zhong|M. H. Tang|
13 Novel Si ion implantation technology for improving the irradiation responses of SOI pseudo-MOS transistor 期刊论文 H. X. Huang|D. W. Bi|M. H. Tang|Z. X. Zhang|
14 Failure mechanisms of guard-drain in mitigating N-hit single-event transient via 45-nm CMOS process 会议论文 Y. Xiong|M. H. Tang|Z. Li|Y. C. Zhou|
15 La Ion-Doping Effect In TiO2-Based Resistive Switching Memory 会议论文 Y. Z. Zhou|G. Li|S. A. Yan|M. H. Tang|
16 Single event effect in a ferroelectric-gate field-effect transistor under heavy-ion irradiation 期刊论文 H. Ding|J. W. Chen|Z. Li|Y. C. Zhou|
17 Investigation of unique total ionizing dose effects in 0.2 μm partially-depleted silicon-on-insulator technology 期刊论文 H. X. Huang|D. W. Bi|M. H. Tang|Z. X. Zhang|
18 A high-sensitivity ASK demodulator for passive UHF RFID tags with automatic voltage limitation and average voltage detection 会议论文 J. C. Li|L. Cai|J. Li|M. X. Zheng|
19 A new EFT test method for IC’s immunity 会议论文 J. F. Wu|C. M. Wang|C. D. Yu|M. H. Tang|
20 Simulation of FeFET-based basic logic circuits and current sense amplifier 期刊论文 Y. L. Yin|Y. H. Chen|Z. Li|Y. C. Zhou|
21 Surface-potential-based drain current model for long-channel junctionless double-gate MOSFETs 期刊论文 J. Q. Huang|J. C. Li|X. C. Gu|Y. C. Zhou|
22 Trivalent ion-doping effect in TiO2-based resistive switching memory 会议论文 B. W. Zeng|D. L. Xu|Y. Z. Zhou|M. H. Tang|
23 Reconfigurable all-band RF CMOS transceiver for GPS/GLONASS/Galileo/Beidou with digitally-assisted calibration 期刊论文 H. Y. Wang|C. Li|J. F. Wu|M. H. Tang|
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