无铅铁电薄膜场效应晶体管的保持性能

60876054
2008
F0404.半导体电子器件与集成
唐明华
面上项目
教授
湘潭大学
35万元
铋层钙钛矿铁电薄膜;印记失效;失效机制;铁电薄膜场效应晶体管;保持性能
2009-01-01到2011-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 Capacitance-voltage and retention characteristics of Pt/SrBi2Ta2O9/HfO2/Si structures with various buffer layer thickness 期刊论文 唐明华|
2 Ferroelectric properties and leakage behavior in poly (vinylidene fluoride-trifluoroethylene) ferroelectric thin films with additive diethyl phthalate 期刊论文 唐明华|
3 Impact of HfTaO buffer layer on data retention characteristics of ferroelectric-gate FET for nonvolatile memory applications 期刊论文 唐明华|
4 一种深亚微米SRAM 6T存储单元的设计方法 期刊论文 蒋波|张新川|王勇|唐明华|
5 Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications 期刊论文 唐明华|
6 Sixteen resistive states of a tunnel junction with a composite barrier 期刊论文 唐明华|
7 Effect of the abnormal electric field induced by the passive layer on imprint failures of ferroelectric capacitors 期刊论文 唐明华|
8 The influence of field-dependent carrier mobility and permittivity on space-charge-limited leakage current characteristics in high dielectric constant and ferroelectric thin films 会议论文 唐明华|
9 Simulation of electric displacement hysteresis and strain butterfly loops in perovskite ferroelectric films 期刊论文 唐明华|
10 Transient effects of graded-channel partially depleted SOI nMOSFET 会议论文 唐明华|
11 Magnetoelectric effect in ferromagnetic-ferroelectric tunneling junctions 期刊论文 唐明华|
12 The giant dielectric tunability effect in bulk La2NiMnO6 around room temperature 期刊论文 唐明华|
13 铁电薄膜及铁电存储器的研究进展 期刊论文 唐明华|
14 Evaluation of capacitance-voltage characteristic and memory window of metal-ferroelectric-insulator-silicon capacitors 期刊论文 唐明华|
15 The giant dielectric tunability effect in bulk Y2NiMnO6 around room temperature 期刊论文 唐明华|
16 一种新型深亚微米电流灵敏放大器的设计 期刊论文 唐明华|蒋波|王勇|张新川|
17 Space-charge-limited leakage current in high dielectric constant and ferroelectric thin films considering the field-dependent permittivity 期刊论文 唐明华|
18 Large memory window and good retention characteristics of ferroelectric-gate field effect transistor with Pt/Bi3.4Ce0.6Ti3O12/CeO2/Si structure 期刊论文 唐明华|
19 Electrical properties and X-ray photoelectron spectroscopy studies of Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin films 期刊论文 唐明华|
20 The electronic conduction mechanism in magnesium-doped Ba0.4Sr0.6TiO3 thin films for varactor application 期刊论文 唐明华|
21 Polarization loss and leakage current reduction in Au/Bi3.15Nd0.85Ti3O12/Pt capacitors induced by electron radiation 期刊论文 唐明华|
22 Effects of applied bias voltage in tunnel junctions with ferroelectric barrier 期刊论文 唐明华|
23 A novel methodology of layout design by applying euler path 会议论文 唐明华|
24 The influence of ferroelectric-electrode interface layer on the electrical characteristics of negative-capacitance ferroelectric double-gate field-effect transistors 期刊论文 唐明华|
25 The fabrication of La-substituted bismuth titanate nanofibers by electrospinning 期刊论文 唐明华|
26 Doping concentration and thickness effects in ferroelectric thin films 期刊论文 唐明华|
27 Influence of the ferroelectric-electrode interface on the characteristics of MFIS-FETs 期刊论文 唐明华|
28 Bipolar and unipolar resistive switching behaviors of sol-gel derived SrTiO3 thin films with different compliance currents 期刊论文 唐明华|
29 Frequency-dependent electrical properties in Bi(Zn0.5Ti0.5)O3 doped Pb(Zr0.4Ti0.6)O3 thin film 期刊论文 唐明华|
30 Top electrode-dependent resistance switching behavior of ZnO thin films deposited on Pt/Ti/SiO2/Si substrate 期刊论文 唐明华|
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