| 1 |
Research Progress on Luminous Properties of Si-based Ge Epitaxieal Films
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期刊论文 |
HUANG Shihao, LI Cheng, CHEN Chengzhao, ZHENG Yua| |
| 2 |
The influence of Ge content on thermal stability of NiSiGe and their contact properties with SiGe epilayer
|
会议论文 |
Mengrao Tang, Wei Huang, Cheng Li, Hongkai Lai,|Songyan Chen| |
| 3 |
Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
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期刊论文 |
Zhi Liu|Buwen Cheng|Weixuan Hu|Shaojian Su|Chuanbo Li|Qiming Wang| |
| 4 |
Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics
|
期刊论文 |
Lu Wei-Fang, Li Cheng, Huang Shi-Hao, Lin Guang-Y|Chen Song-Yan| |
| 5 |
A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on Si1？xGex Epilayers on Si Substrates
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期刊论文 |
Mengrao Tang|Cheng Li|Zheng Wu|Guanzhou Liu|Wei Huang|Hongkai Lai|Songyan Chen| |
| 6 |
<span lang="EN-US" style="font-family: "Times New Roman"; font-size: 12pt; mso-fareast-font-family: 楷体_GB2312; mso-ansi-language: EN-US; mso-fareast-language: ZH-CN; mso-bidi-language: AR-SA"> Room-temperature d
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期刊论文 |
Hu Wei-Xuan|Cheng Bu-Wen|Xue Chun-Lai, Zhang Guang-Ze, Su Shao-Jian|Zuo Yu-Hua, and Wang Qi-Ming| |
| 7 |
Enhanced photoluminescence and electroluminescence of multilayer GeSi islands on Si(001) substrates by phosphorus-doping
|
期刊论文 |
Weixuan Hu|Shaojian Su|Chong Li|Chuanbo Li|Chunlai Xue|Yaming Li|Yuhua Zuo|Buwen Cheng|Qiming Wang| |
| 8 |
Lattice constant deviation from Vegard';s law in GeSn alloys
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期刊论文 |
Su Shao-Jian|Cheng Bu-Wen|Xue Chun-Lai|Zhang Dong-Liang|Zhang Guang-Ze|Wang Qi-Ming| |
| 9 |
Epitaxial Growth and Applications of GeSn alloys
|
会议论文 |
Buwen Cheng|Shaojian Su, Wei Wang, Chunlai Xue|Guangze Zhang, Dongliang Zhang, Qiming Wang, Genquan Han,|Lanxiang Wang, Xiao Gong, Yee-Chia Yeo| |
| 10 |
Epitaxial growth and thermal stability of Ge1-xSnx alloys on Ge-buffered Si(001) substrates
|
期刊论文 |
S.J. Su, W. Wang|B.W. Cheng|G.Z. Zhang, W.X. Hu, C.L. Xue, Y.H. Zuo, Q.M.Wang | |
| 11 |
Growth of GeSn alloys on Silicon substrate
|
会议论文 |
Buwen Cheng, Shaojian Su, Wei Wang, Guangze Zhang| |
| 12 |
Analysis of tensile strain enhancement in Ge nano-belts on an insulator surrounded by dielectrics
|
期刊论文 |
Lu Wei-Fang, Li Cheng, Huang Shi-Hao, Lin Guang-Y|Chen Song-Yan| |
| 13 |
Growth and Properties of Ultra Thin GeO2 by Rapid Thermal Oxidation
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期刊论文 |
Lu Changbao|Liu Guanzhou|Li Cheng|Lai Hongkai|Chen Songyan| |
| 14 |
Effects of Rapid Thermal Process Temperatures on Strain and Si Concentration Distributions in Ge-on-Insulator Structures Formed by Rapid Melt Growth
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期刊论文 |
Zuo, Y. H.|Li, C. B.|Wang, Q. M.|Cheng, B. W.| |
| 15 |
Epitaxy of Si-based Ge materialis with UHV/CVD and modulation of Schottky barrier height in metal/n-Ge contacts
|
会议论文 |
Cheng Li*|Chengzhao Chen, Zheng Wu, Yuanyu Zheng, Shhao Hua|Songyan Chen| |
| 16 |
Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate
|
期刊论文 |
Dongfeng Qi, Hanhui Liu, Songyan Chen, Cheng Li,| |
| 17 |
The contributions of composition and strain to the phonon shift in Ge1-xSnx alloys
|
期刊论文 |
S.J. Su, W. Wang|B.W. Cheng|W.X. Hu, G.Z. Zhang, C.L. Xue, Y.H. Zuo, Q.M. Wang| |
| 18 |
Si基Ge异质结构发光器件的研究进展
|
期刊论文 |
刘智|李传波|薛春来|成步文| |
| 19 |
A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission
|
期刊论文 |
Shihao Huang, Weifang Lu, Cheng Li,* Wei Huang, H|Songyan Chen| |
| 20 |
High-Bandwidth and High-Responsivity Top-Illuminated Germanium Photodiodes for Optical Interconnection
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期刊论文 |
Li, Chong|Xue, Chunlai|Liu, Zhi|Cheng, Buwen|Li, Chuanbo|Wang, Qiming| |
| 21 |
<span style="font-family: ;" Times="" New="" Roman?,?serif?;font-size:12pt;?="">Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature</span>
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期刊论文 |
He Chao, Liu Zhi, Zhang Xu|Huang Wen-Qi, Xue Chun-Lai|Cheng Bu-Wen| |
| 22 |
Epitaxy of Ge on offcut Si substrate for growth of In0.01Ga0.99As
|
会议论文 |
Weixuan Hu, Buwen Cheng, Chunlai Xue, Shaojian Su| |
| 23 |
Germanium-Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 degrees C Si2H6 Passivation
|
期刊论文 |
Zhang, Zheng|Tok, Eng Soon|Antoniadis, Dimitri|Yeo, Yee-Chia| |
| 24 |
Ge/Si quantum dots thin film solar cells
|
期刊论文 |
Liu, Zhi|Zhou, Tianwei|Li, Leliang|Zuo, Yuhua|He, Chao|Li, Chuanbo|Xue, Chunlai|Cheng, Buwen|Wang, Qiming| |
| 25 |
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge nt/p Diode Achieved by Implantation and Excimer Laser Annealing
|
期刊论文 |
Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Gu|Songyan Chen| |
| 26 |
Wet thermal annealing effect on TaN/HfO2/Ge metal-oxide-semiconductor capacitors with and without a GeO2 passivation layer
|
期刊论文 |
Li Cheng|Lu Chang-Bao|Tang Rui-Fan|Tang Meng-Rao|Wu Zheng|Yang Xu|Huang Wei|Lai Hong-Kai|Chen Song-Yan| |
| 27 |
Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
|
期刊论文 |
Hung-Pin Hsu,1 Pong-Hong Yang,1 Jeng-Kuang Huang,|Kwong-Kau Tiong4| |
| 28 |
Ge Nanodots Orgnization on Si Substrates Patterned by ECL Method
|
期刊论文 |
LI Yang-juan, HUANG Kai, LAI Hong-kai, LI Cheng| |
| 29 |
Enhanced thermal stability of Au@Pt nanoparticles by tuning shell thickness: Insights from atomistic simulations
|
期刊论文 |
Yu-Hua Wen|Rao Huang|Cheng Li|Zi-Zhong Zhu Shi-Gang Sun| |
| 30 |
Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
|
期刊论文 |
Zhang, Dongliang|Zhang, Guangze|Xue, Chunlai|Cheng, Buwen| |
| 31 |
Growth of Ge and GeSn on Si substrate
|
会议论文 |
Buwen Cheng| |
| 32 |
Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film
|
期刊论文 |
Dongfeng Qi, Hanhui Liu, Wei Gao, Songyan Chen, C|Jun Li| |
| 33 |
Si基Ge异质结构发光器件的研究进展
|
期刊论文 |
刘智|李传波|薛春来|成步文| |
| 34 |
Design of waveguide integrated Ge-quantum-well electro-absorption modulators
|
期刊论文 |
Hongwei Zhao, Weixuan Hu, Chunlai Xue| Buwen Cheng|Qiming Wang| |
| 35 |
Design of an evanescent-coupled GeSi electro-absorption modulator based on Franz-Keldysh effect
|
期刊论文 |
Li Ya-Ming|Liu Zhi|Xue Chun-Lai|Li Chuan-Bo|Cheng Bu-Wen|Wang Qi-Ming| |
| 36 |
Modulation of Schottky Barrier Height of Metal/TaN/n-Ge Junctions by Varying TaN Thickness
|
期刊论文 |
Zheng Wu|Wei Huang|Cheng Li|Hongkai Lai|Songyan Chen| |
| 37 |
Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge
|
期刊论文 |
Ruan, Yujiao, Chengzhao Chen, Shihao Huang,|Wei Huang, Songyan Chen, Cheng Li, and Jun Li| |
| 38 |
Self-mask fabrication of uniform orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes
|
期刊论文 |
Dongfeng Qi, Hanhui Liu, Wei Gao, Qinqin Sun, Son|Hongkai Lai| |
| 39 |
Texture Evolution and Grain Competition in NiGe Film on Ge(001)
|
期刊论文 |
Wei Huang, Mengrao Tang, Chen Wang, Cheng Li, Jun|Hongkai Lai| |
| 40 |
Thermal stability investigation of SiGe virtual substrate with a thin Ge buffer layer grown on Si substrate
|
期刊论文 |
Dongfeng Qi, Hanhui Liu, Songyan Chen, Cheng Li,| |
| 41 |
The impact of polishing on germanium-on-insulator substrates
|
期刊论文 |
Wang, Lin, Ruan Yujiao, Chen Songyan, Li Cheng, L|Huang Wei| |
| 42 |
Ge-on-Si for Si-based integrated materials and photonic devices
|
期刊论文 |
Weixuan HU|Buwen CHENG|Chunlai XUE|Shaojian SU|Haiyun XUE|Yuhua ZUO|Qiming WANG| |
| 43 |
Improvement of performance of Si-based Ge PIN photodetectors with Al/TaN electrode for n-type Ge contacts
|
期刊论文 |
Wu Zheng|Wang Chen|Yan Guang-Ming|Li Cheng|Huang Wei Lai Hong-Kai|Chen Song-Yan| |
| 44 |
Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate
|
期刊论文 |
CHEN Li-qun, CHEN Yang-hua,|LI Cheng| |
| 45 |
Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer
|
期刊论文 |
Ruifan Tang, Kai Huang*, Hongkai Lai*, Cheng Li,|Junyong Kang| |
| 46 |
Formation of rippled surface morphology during Si/Si(100) epitaxy by ultrahigh vacuum chemical vapour deposition
|
期刊论文 |
Hu Wei-Xuan|Cheng Bu-Wen| Xue Chun-Lai, Su Shao-Jian, and Wang Qi-Ming| |
| 47 |
Germanium-tin n+/p junction formed using phosphorus ion implant and 400 °C rapid thermal anneal
|
期刊论文 |
C. Xue|B. Cheng|G. Han|Y.-C. Yeo| |
| 48 |
Influence of Implantation Damages and Intrinsic Dislocations on Phosphorus Diffusion in Ge
|
期刊论文 |
Ruan, Yujiao, Chengzhao Chen, Shihao Huang, Wei H|Jun Li| |
| 49 |
Room temperature photoluminescence from tensile-strained germanium-on-insulator fabricated by a Ge condensation technique
|
会议论文 |
Shihao Huang, Weifang Lu, Cheng Li, Wei huang, Ho|Songyan Chen| |
| 50 |
Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer
|
期刊论文 |
Mengrao Tang, Guangyang Lin, Cheng Li, Chen Wang,| |
| 51 |
Epitaxial Growth and Applications of GeSn alloys on Silicon substrate
|
会议论文 |
Buwen Cheng|Shaojian Su, Wei Wang, Guangze Zhang|Chunlai Xue, Liping Luo, Yuhua Zuo, Qiming Wang| |
| 52 |
The study of temperature dependent strain in Ge epilayer with SiGe/Ge buffer layer on Si substrate with different thickness
|
期刊论文 |
Po-Hung Wu, Ying-Sheng Huang, Hung-Pin Hsu, Cheng|Kwong-Kau Tiong| |
| 53 |
Investigations of morphology and formation mechanism of laser-induced annular/droplet-like structures on SiGe film.
|
期刊论文 |
Qi, Dongfeng|Liu, Hanhui|Gao, Wei|Chen, Songyan|Li, Cheng|Lai, Hongkai|Huang, Wei|Li, Jun| |
| 54 |
Si nanopillar arrays with nanocrystals produced by template-induced growth at room temperature
|
期刊论文 |
Bai An-Qi, Zheng Jun, Tao Ye-Liao, Zuo Yu-Hua|Xue Chun-Lai|Cheng Bu-Wen|Wang Qi-Ming| |
| 55 |
Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD
|
期刊论文 |
Chen Chen-zhao|Zheng Yuan-Yu|Huang Shi-Hao|Li Cheng|Lai Hong-Kai|Chen Songyan| |
| 56 |
<span lang="EN-US" style="font-family: CMBX12; font-size: 12pt; mso-fareast-font-family: 宋体; mso-ansi-language: EN-US; mso-fareast-language: ZH-CN; mso-bidi-language: AR-SA; mso-bidi-font-family: CMBX12">Remarkable Franz-Keldysh
|
期刊论文 |
LI Ya-Ming, HU Wei-Xuan|CHENG Bu-Wen|LIU Zhi，WANG Qi-Ming| |
| 57 |
Texture Evolution and Grain Competition in NiGe Film on Ge(001)
|
期刊论文 |
Wei Huang|Mengrao Tang|Chen Wang|Cheng Li|Jun Li|Songyan Chen|Chunlai Xue|Hongkai Lai| |
| 58 |
formation and properties of GOI prepared by cyclic thermal oxidaton and annealing processes
|
期刊论文 |
Meijiao Hu, Cheng LI*, Jianfang xu, Hongkai Lai,| |
| 59 |
Evolution of Laser-Induced Specific Nanostructures on SiGe Compounds via Laser Irradiation Intensity Tuning
|
期刊论文 |
Dongfeng Qi, Xin Li, Peng Wang, Songyan Chen, Wei|Hongkai Lai| |
| 60 |
Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
|
期刊论文 |
Su Shao-Jian|Han Gen-Quan|Zhang Dong-Liang|Zhang Guang-Ze|Xue Chun-Lai|Wang Qi-Ming|Cheng Bu-Wen| |
| 61 |
In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition
|
期刊论文 |
Shihao Huang,Cheng Li,Chengzhao Chen, Chen Wang,|Songyan Chen| |
| 62 |
Compact two-mode (de)multiplexer based on symmetric Y-junction and Multimode interference waveguides
|
期刊论文 |
Li, Chong|Li, Chuanbo|Cheng, Buwen|Xue, Chunlai| |
| 63 |
<span lang="EN-US" style="font-size: 12pt; font-family: "Times New Roman"; mso-fareast-font-family: 楷体_GB2312; mso-ansi-language: EN-US; mso-fareast-language: ZH-CN; mso-bidi-language: AR-SA">GeSn p-i-n photodet
|
期刊论文 |
Shaojian Su|Buwen Cheng|Chunlai Xue, Wei Wang, Quan Cao|Haiyun Xue, Weixuan Hu, Guangze Zhang|Yuhua Zuo, and Qiming Wang| |
| 64 |
Epitaxial growth of Ge0.975Sn0.025 alloy films on Si(001) substrates by molecular beam epitaxy
|
期刊论文 |
Su Shao-Jian|Wang Wei|Zhang Guang-Ze|Hu Wei-Xuan|Bai An-Qi|Xue Chun-Lai|Zuo Yu-Hua|Cheng Bu-Wen|Wang Qi-Ming| |
| 65 |
Self-mask fabrication of uniform orientated SiGe island/SiGe/Si hetero-nanowire arrays with controllable sizes
|
期刊论文 |
Dongfeng Qi, Hanhui Liu, Wei Gao, Qinqin Sun, Son|Hongkai Lai| |
| 66 |
Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing
|
期刊论文 |
Pan Shu-Wan Chen Song-Yan Zhou Bi Huang Wei Li Ch| |
| 67 |
Detection and analysis of residual strain of epitaxial Ge films on Si substrates
|
期刊论文 |
ZHOU Zhi-wen, LI Cheng, YU Jin-zhong| |
| 68 |
Strained and strain-relaxed epitaxial Ge1-xSnx alloys on Si(100) substrates
|
期刊论文 |
Wang Wei|Su Shao-Jian|Zheng Jun|Zhang Guang-Ze|Zuo Yu-Hua|Cheng Bu-Wen|Wang Qi-Ming| |
| 69 |
High Performance Germanium n+/p Shallow Junction for the Scaled nMOSFET
|
会议论文 |
Chen Wang, Cheng Li, Wei Huang, Songyan Chen,|Hongkai Lai| |
| 70 |
Microcavity effects in SiGe/Si heterogeneous nanostructures prepared by electrochemical anodization of SiGe/Si multiple quantum wells
|
期刊论文 |
S.W. Pan, B. Zhou, R. Chen, S. Y. Chen, Cheng Li,| |
| 71 |
Low Specific Contact Resistivity to n-Ge and Well-Behaved Ge nþ/p Diode Achieved by Implantation and Excimer Laser Annealing
|
期刊论文 |
Chen Wang, Cheng Li, Shihao Huang, Weifang Lu, Gu|Songyan Chen| |
| 72 |
Depth-dependent etch pit density in Ge epilayer on Si substrate with a self-patterned Ge coalescence island template
|
期刊论文 |
Shihao Huang|Cheng Li|Zhiwen Zhou|Chengzhao Chen|Yuanyu Zheng|Wei Huang|Hongkai Lai|Songyan Chen| |
| 73 |
掺杂对多层Ge/Si(001)量子点光致发光的影响
|
期刊论文 |
刘智|李亚明|薛春来|成步文|王启明| |
| 74 |
掺杂对多层Ge/Si(001) 量子点光致发光的影响
|
期刊论文 |
刘智|李亚明|薛春来|成步文|王启明| |
| 75 |
Formation of nickel germanide on SiO2-capped n-Ge to lower its Schottky barrier height
|
期刊论文 |
Guangyang Lin, Mengrao Tang, Cheng Li,a) Shihao H|Songyan Chen| |
| 76 |
Photoluminescence properties of selenium nanocrystals on Si(100) substrate formed by rapid thermal annealing
|
期刊论文 |
Pan Shu-Wan Chen Song-Yan Zhou Bi Huang Wei Li Ch| |
| 77 |
Role of Ge interlayer in the growth of high-quality strain relaxed SiGe layer with low dislocation density
|
期刊论文 |
Chengzhao Chen, Linghong Liao, Cheng Li*, Hongkai| |
| 78 |
A simple fabrication of ultralong strained Ge nanobelts by hololithography and oxidation processes
|
会议论文 |
Cheng Li, Cheng Li*, Weifang Lu, Shihao Huang, Ho|Songyan Chen| |
| 79 |
High-quality Ge1-xSnx alloys grown on Ge(001) substrates by molecular beam epitaxy
|
期刊论文 |
Zhang Guang-Ze|Xue Chun-Lai|Cheng Bu-Wen|Wang Qi-Ming| |
| 80 |
Design of electro-absorption modulator with tapered-mode coupler on the GeSi layer
|
期刊论文 |
Ym Li|BW Cheng| |
| 81 |
Dopant Segregation and Nickel Stanogermanide Contact Formation on p(+) Ge0.947Sn0.053 Source/Drain
|
期刊论文 |
Wang, Qiming|Xue, Chunlai|Cheng, Buwen|Yeo, Yee-Chia| |
| 82 |
Lateral Ge segregation and strain evolution in SiGe alloys during the formation of nickel germano-silicide on a relaxed Si0.73Ge0.27 epilayer
|
期刊论文 |
Mengrao Tang, Guangyang Lin, Cheng Li,|Chen Wang, Maotian Zhang, Wei Huang, Hongkai Lai| |
| 83 |
Asymmetric light reflectance effect in AAO on glass
|
期刊论文 |
Kai Huang, Y.J. Li, Z.M. Wu, Cheng Li, H.K. Lai,| |
| 84 |
Epitaxy of In0.01Ga0.99As on Ge/offcut Si (001) virtual substrate
|
期刊论文 |
Shaojian Su|Zhi Liu|Yaming Li|Qiming Wang|Liangjun Wang|Jiangqing Liu|Jie Ding|Guijiang Lin|Zhidong Lin| |
| 85 |
Characterization of Ge/Si0.16Ge0.84 multiple quantum wells on Ge- on- Si virtual substrateusingpiezoreflectance spectroscopy
|
期刊论文 |
P.H.Wu a, Y.S.Huang a,n, H.P.Hsu b, C.Li c, S.H.H| |
| 86 |
Phosphorus diffusion in germanium following implantation and excimer laser annealing
|
期刊论文 |
Chen Wang, Cheng Li∗, Shihao Huang, Weifang Lu, G| |
| 87 |
Propeties and mechanism analysis of metal/Ge ohmic contact
|
期刊论文 |
Yan Guang-Ming, Li Cheng,Tang Meng-Rao,Huang Shi-| |
| 88 |
Charge storage characteristics of Au nanocrystal memory improved by the oxygen vacancy-reduced HfO2 blocking layer
|
期刊论文 |
Ruifan Tang, Kai Huang*, Hongkai Lai*, Cheng Li,|Junyong Kang| |
| 89 |
Influence of the hydrogen implantation power density on ion cutting of Ge
|
期刊论文 |
Ruan, Yujiao, Wang Lin, Songyan Chen, Cheng Li, H|Jun Li| |
| 90 |
Detection and analysis of residual strain of epitaxial Ge films on Si substrates
|
期刊论文 |
ZHOU Zhi-wen|LI Cheng|YU Jin-zhong| |
| 91 |
The impact of polishing on germanium-on-insulator substrates
|
期刊论文 |
Wang, Lin, Ruan Yujiao, Chen Songyan, Li Cheng, L|Huang Wei| |
| 92 |
Cooling Rate Dependent Lattice Rotation in Ge on Insulators Formed by Rapid Melt Growth
|
期刊论文 |
Wen, J. J.|Liu, Z.|Li, L. L.|Li, C.|Xue, C. L.|Zuo, Y. H.|Li, C. B.|Wang, Q. M.|Cheng, B. W.| |
| 93 |
In situ doped phosphorus diffusion behavior in germanium epilayer on silicon substrate by ultra-high vacuum chemical vapor deposition
|
期刊论文 |
Shihao Huang|Cheng Li|Chengzhao Chen|Chen Wang|Guangming Yan|Hongkai Lai|Songyan Chen| |
| 94 |
Effects of high temperature rapid thermal annealing on Ge films grown on Si(001) substrate
|
期刊论文 |
Liu Zhi|Cheng Bu-Wen|Li Ya-Ming|Li Chuan-Bo|Xue Chun-Lai|Wang Qi-Ming| |
| 95 |
Epitaxial Growth Of Ge Layers With Low Dislocation Density On Silicon Substrate By Inserting Strained Layer Superlattices
|
会议论文 |
Chengzhao CHEN1, Shihao HUANG, Cheng LI, Hongkai| |
| 96 |
Photoreflectance Spectroscopy Characterization of Ge/Si0.16Ge0.84 Multiple Quantum Wells on Ge Virtual Substrate
|
期刊论文 |
Hung-Pin Hsu, Pong-Hong Yang, Jeng-Kuang Huang, P|Kwong-Kau Tiong| |
| 97 |
Room temperature direct-bandgap electroluminescence from n-type strain-compensated Ge/SiGe multiple quantum wells
|
期刊论文 |
Zhi Liu|Weixuan Hu|Chong Li|Yaming Li|Chunlai Xue|Chuanbo Li|Yuhua Zuo|成步文|Qiming Wang| |
| 98 |
Ohmic Contact Formation of Sputtered TaN on n-Type Ge with Lower Specific Contact Resistivity
|
期刊论文 |
Zheng Wu|Chen Wang|Wei Huang|Cheng Li|Hongkai Lai|Songyan chen| |
| 99 |
Characterization of Ge/Si0.16Ge0.84 multiple quantum wells on Ge- on- Si virtual substrateusingpiezoreflectance spectroscopy
|
期刊论文 |
P.H.Wu, Y.S.Huang, H.P.Hsu, C.Li, S.H.Huang, K.K.| |
| 100 |
Growth of GeSi nanoislands on nanotip-patterned Si (100) substrates with a stress-induced self-limiting interdiffusion
|
期刊论文 |
Ruifan Tang|Kai Huang|Hongkai Lai|Cheng Li|Zhiming Wu|Junyong Kang| |
| 101 |
Thermally Stable Multi-Phase Nickel-Platinum Stanogermanide Contacts for Germanium-Tin Channel MOSFETs
|
期刊论文 |
Xue, Chunlai|Wang, Qiming|Cheng, Buwen|Yeo, Yee-Chia| |
| 102 |
Growth of Ge1-xSnx/Ge strained-layer superlattices on Si(100) by molecular beam epitaxy
|
期刊论文 |
Dongliang Zhang|Guangze Zhang|Chunlai Xue|Buwen Cheng| |
| 103 |
Propeties and mechanism analysis of metal/Ge ohmic contact
|
期刊论文 |
Yan Guang-Ming, Li Cheng,Tang Meng-Rao,Huang Shi-| |
| 104 |
Room temperature photoluminescence of Ge-on-insulator structures formed by rapid melt growth
|
期刊论文 |
Wen, Juanjuan|Liu, Zhi|Li, Leliang|Li, Chong|Xue, Chunlai|Zuo, Yuhua|Li, Chuanbo|Wang, Qiming|Cheng, Buwen| |
| 105 |
GeSn合金的晶格常数对Vegard定律的偏离
|
期刊论文 |
薛春来|张东亮|张广泽|王启明| |
| 106 |
Physical and electrical properties of thermally oxidized dielectrics on Si-capped Ge-on-Si substrate
|
期刊论文 |
Yuanyu Zheng|Guanzhou Liu|Cheng Li|Wei Huang|Songyan Chen|Hongkai Lai| |
| 107 |
Germanium n+/p Shallow Junction With Record Rectification Ratio Formed by Low-Temperature Preannealing and Excimer Laser Annealing
|
期刊论文 |
Chen Wang, Cheng Li, Guangyang Lin, Weifang Lu, J|Miao Zhang| |
| 108 |
Photoluminescence of Si-based nanotips fabricated by anodic aluminum oxide template
|
期刊论文 |
Y.J. Li, Kai Huang, H. K. Lai, Cheng Li, S. Y. Ch| |
| 109 |
Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
|
期刊论文 |
Xue, Chunlai|Cheng, Buwen|Han, Genquan|Yeo, Yee-Chia| |
| 110 |
Effect of doping on the photoluminescence of multilayer Ge quantum dots deposited on Si(001) substrate
|
期刊论文 |
Liu Zhi|Li Ya-Ming|Xue Chun-Lai|Cheng Bu-Wen|Wang Qi-Ming| |
| 111 |
Epitaxial growth of thick Ge layers with low dislocation density on silicon substrate by UHV/CVD
|
期刊论文 |
Chen Chen-zhao,Zheng Yuan-Yu,Huang Shi-Hao, Li Ch|Lai Hong-Kai|Chen Songyan| |
| 112 |
Properties of ultra-thin SiGe- on- insulator materials prepared by Ge condensation method
|
期刊论文 |
Cheng Li*|Shihao Huang|Weifang Lu|Jianfang Xu|Wei Huang|Zhijun Sun|Hongkai Lai|Songyan Chen| |
| 113 |
UHV/CVD growth of Ge/Si0.15Ge0.85 multiple quantum wells for electro-absorption modulation
|
会议论文 |
Hongwei Zhao, Weixuan Hu, Chunlai Xue, Buwen Chen|Qiming Wang| |
| 114 |
Strained Germanium-Tin pMOSFET Fabricated on a Silicon-on-Insulator Substrate with Relaxed Ge Buffer
|
期刊论文 |
Su Shao-Jian|Han Gen-Quan|Zhang Dong-Liang|Zhang Guang-Ze|Xue Chun-Lai|Wang Qi-Ming|Cheng Bu-Wen| |
| 115 |
Growth and application of GeSn,
|
会议论文 |
B. Cheng| |
| 116 |
<span style="color: black; font-family: ;" Times="" New="" Roman?,?serif?;font-size:12pt;?="">Comparative studies of clustering effect, electronic and optical properties for GePb and GeSn alloys with low Pb an
|
期刊论文 |
Wenqi Huang|Buwen Cheng|Chunlai Xue, Chuanbo Li| |
| 117 |
<span style="font-family: ;" Roman?,?serif?;font-size:12pt;?="" New="" Times="">Direct-bandgap electroluminescence from a horizontal Ge p-i-n ridge waveguide on Si(001) substrate</span>
|
期刊论文 |
Zhi Liu, Yaming Li, Chao He, Chuanbo Li|Chunlai Xue, Yuhua Zuo|Buwen Cheng|Qiming Wang| |
| 118 |
Ge(001)衬底上分子束外延生长高质量的Ge_(1-x)Sn_x合金
|
期刊论文 |
张广泽|薛春来|成步文|王启明| |
| 119 |
Epitaxial Growth of Germanium on Silicon for Light Emitters
|
期刊论文 |
Chengzhao Chen|Cheng Li|Shihao Huang|Yuanyu Zheng|Hongkai Lai|Songyan Chen| |
| 120 |
<span style="font-family: ;" Roman?,?serif?;font-size:12pt;?="" New="" Times="">Si</span><span style="font-family:宋体;font-size:12pt;">基</span><span style="font-family: ;&quo
|
期刊论文 |
刘智，张旭，何超，黄文奇，薛春来|成步文| |
| 121 |
Desgin and experiment of Si-based Ge/SiGe type-I quantum well structures
|
期刊论文 |
Chen chengzhao|Chen Yanghua|Huang shihao|Li Cheng*|Lai Hongkai|Chen Songyan| |
| 122 |
GeSn on Si Photodetectors Grown by Molecular Beam Epitaxy
|
会议论文 |
S.J. Su, C.L. Xue, B.W. Cheng, W. Wang, G.Z. Zhan|Q.M. Wang| |
| 123 |
Group-Ⅳ light emitting materials and devices for optical interconnect
|
会议论文 |
Buwen Cheng, Zhi Liu, Chao He, Dongliang Zhang, X|Wenqi Huang, Chunlai Xue, Chuanbo Li, Qiming Wang| |
| 124 |
基于Franz-Keldysh效应的倏逝波锗硅电吸收调制器设计
|
期刊论文 |
李亚明|刘智|薛春来|李传波|成步文|王启明| |
| 125 |
The optical property of tensile-strained n-type doped Ge
|
期刊论文 |
Huang Shi-Hao|Li Cheng|Chen Cheng-Zhao|Zheng Yuan-Yu|Lai Hong-Kai|Chen Song-Yan| |
| 126 |
Influence of the hydrogen implantation power density on ion cutting of Ge
|
期刊论文 |
Ruan, Yujiao, Wang Lin, Songyan Chen, Cheng Li, H|Jun Li| |
| 127 |
A CMOS-compatible approach to fabricate an ultra-thin germanium-on-insulator with large tensile strain for Si-based light emission.
|
期刊论文 |
Huang, Shihao|Lu, Weifang|Li, Cheng|Huang, Wei|Lai, Hongkai|Chen, Songyan| |
| 128 |
GeSn near infrared photodetectors
|
会议论文 |
Buwen Cheng|Dongliang Zhang, Shaojian Su, Xu Zhang|Chunlai Xue, Chuanbo Li, Guangze Zhang, Qiming Wang| |
| 129 |
Non-homogeneous SiGe-on-insulator formed by germanium condensation process
|
期刊论文 |
Huang Shi-Hao, Li Cheng, Lu Wei-Fang, Wang Chen,|Chen Song-Yan| |
| 130 |
Ohmic Contact to n-Type Ge With Compositional W Nitride
|
期刊论文 |
Huan Da Wu, Chen Wang, Jiang Bin Wei, Wei Huang,|Song Yan Chen| |
