氮化镓基激光器的关键科学与技术问题研究
60836003
2008
F0403.半导体光电子器件与集成
张书明
重点项目
研究员
中国科学院半导体研究所
240万元
氮化镓基激光器;欧姆接触;P型掺杂;量子阱;侧向外延
2009-01-01到2012-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | 氮化镓基雪崩型探测器及其制作方法 | 专利 | |
| 2 | Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n-type GaN films | 期刊论文 | Zhao, D. G.|Jiang, D. S.|Zhu, J. J.|Liu, Z. S.|Wang, H.|Zhang, S. M.|Wang, Y. T.|Yang, Hui| |
| 3 | Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area | 期刊论文 | Liu, W. B.|Wang, Y. T.|Duan, L. H.|Yang, H.|Zhao, D. G.|Sun, X.|Zhang, S.|Jiang, D. S.|Wang, H.|Zhang, S. M.|Liu, Z. S.|Zhu, J. J.| |
| 4 | Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector | 期刊论文 | Zhao, D. G.|Jiang, D. S.|Zhu, J. J.|Wang, H.|Liu, Z. S.|Zhang, S. M.|Yang, Hui| |
| 5 | 半导体激光器TO封装结构及方法 | 专利 | 冯美鑫 |
| 6 | Suppression of indium droplet formation by adding CCl4 during metalorganic chemical vapor deposition growth of InN films | 期刊论文 | Wang, H.|Wang, Y. T.|Zhang, S. M.|Yang, H.|Wang, L. L.|Sun, X.|Zhu, J. H.|Liu, W. B.|Jiang, D. S.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.| |
| 7 | Simulation of the light extraction efficiency of nanostructure light-emitting diodes | 期刊论文 | Zhu Ji-Hong|Wang Liang-Ji|Zhang Shu-Ming|Wang Hui|Zhao De-Gang|Zhu Jian-Jun|Liu Zong-Shun|Jiang De-Sheng|Yang Hui| |
| 8 | Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours | 期刊论文 | Zeng Chang|Chong Ming|Duan Li-Hong|Wang Hai|Shi Yong-Sheng|Liu Su-Ying|Yang Hui|Chen Liang-Hui|Zhang Shu-Ming|Ji Lian|Wang Huai-Bing|Zhao De-Gang|Zhu Jian-Jun|Liu Zong-Shun|Jiang De-Sheng|Cao Qing| |
| 9 | Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire | 期刊论文 | Zhao, D. G.|Zhang, S. M.|Yang, H.|Jiang, D. S.|Wu, L. L.|Le, L. C.|Li, L.|Chen, P.|Liu, Z. S.|Zhu, J. J.|Wang, H.| |
| 10 | Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure | 期刊论文 | Ji Lian|Zhang Shu-Ming|Jiang De-Sheng|Liu Zong-Shun|Zhang Li-Qun|Zhu Jian-Jun|Zhao De-Gang|Duan Li-Hong|Yang Hui| |
| 11 | Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells | 期刊论文 | Zhao De-Gang|Jiang De-Sheng|Zhu Jian-Jun|Liu Zong-Shun|Zhang Shu-Ming|Wang Yu-Tian|Yang Hui| |
| 12 | Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer | 期刊论文 | Chen, P.1|Wang, H.2|Zhang, S.M.2|Yang, H.2|Feng, M.X.1, 2|Jiang, D.S.1|Zhao, D.G.1|Liu, Z.S.1|Li, L.1|Wu, L.L.1|Le, L.C.1|Zhu, J.J.2| |
| 13 | The fabrication of GaN-based nanopillar light-emitting diodes | 期刊论文 | Zhu, Jihong|Wang, Liangji|Zhang, Shuming|Wang, Hui|Zhao, Degang|Zhu, Jianjun|Liu, Zongshun|Jiang, Desheng|Yang, Hui| |
| 14 | Abnormal photoabsorption in high resistance GaN epilayer | 期刊论文 | Liu Wen-Bao|Zhao De-Gang|Jiang De-Sheng|Liu Zong-Shun|Zhu Jian-Jun|Zhang Shu-Ming|Yang Hui| |
| 15 | The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD | 期刊论文 | Wang, H.|Jiang, D. S.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.|Wang, Y. T.|Zhang, S. M.|Yang, H.| |
| 16 | Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green | 期刊论文 | Zhang, L. Q.|Jiang, D. S.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.|Zhang, S. M.|Yang, H.| |
| 17 | Positive and negative effects of oxygen in thermal annealing of p-type GaN | 期刊论文 | Wu, L. L.|Wang, H.|Zhang, B. S.|Yang, H.|Zhao, D. G.|Jiang, D. S.|Chen, P.|Le, L. C.|Li, L.|Liu, Z. S.|Zhang, S. M.|Zhu, J. J.| |
| 18 | 氮化镓基激光器列阵管芯的器件结构及制作方法 | 专利 | |
| 19 | Defect evolution and accompanied change of electrical properties during the GaN growth by metalorganic chemical vapor deposition | 期刊论文 | Zhao, D. G.|Jiang, D. S.|Zhu, J. J.|Guo, X.|Liu, Z. S.|Zhang, S. M.|Wang, Y. T.|Yang, Hui| |
| 20 | A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector | 期刊论文 | Zhao, D. G.|Zhang, S.|Jiang, D. S.|Zhu, J. J.|Liu, Z. S.|Wang, H.|Zhang, S. M.|Zhang, B. S.|Yang, H.| |
| 21 | Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors | 期刊论文 | Zhao De-Gang|Yang Hui|Wei Long|Zhang Shuang|Liu Wen-Bao|Hao Xiao-Peng|Jiang De-Sheng|Zhu Jian-Jun|Liu Zong-Shun|Wang Hui|Zhang Shu-Ming| |
| 22 | Contribution of GaN template to the unexpected Ga atoms incorporated into AlInN epilayers grown under an indium-very-rich condition by metalorganic chemical vapor deposition (MOCVD) | 期刊论文 | Zhu, J. J.|Chen, G. F.|Zhang, B. S.|Yang, H.|Fan, Y. M.|Zhang, H.|Lu, G. J.|Wang, H.|Zhao, D. G.|Jiang, D. S.|Liu, Z. S.|Zhang, S. M.| |
| 23 | Thermal characterization of GaN-based laser diodes by forward-voltage method | 期刊论文 | Feng, M.X.1, 2|Yang, H.1, 2|Zhang, S.M.2|Jiang, D.S.1|Liu, J.P.2|Wang, H.2|Zeng, C.1, 2|Li, Z.C.1, 2|Wang, H.B.2|Wang, F.2| |
| 24 | 半导体激光器的制作方法 | 专利 | 冯美鑫 |
| 25 | Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices | 期刊论文 | Wang Liang-Ji|Zhang Shu-Ming|Zhu Ji-Hong|Zhu Jian-Jun|Zhao De-Gang|Liu Zong-Shun|Jiang De-Sheng|Wang Yu-Tian|Yang Hui| |
| 26 | Curvature Correction of FWHM in the X-Ray Rocking Curve of Bent Heteroepitaxial Films | 期刊论文 | Wang Liang-Ji|Wang Hai|Liu Su-Ying|Yang Hui|Zhang Shu-Ming|Wang Yu-Tian|Jiang De-Sheng|Zhu Jian-Jun|Zhao De-Gang|Liu Zong-Shun|Wang Hui|Shi Yong-Sheng| |
| 27 | 具有纳米结构插入层的GaN基LED | 专利 | |
| 28 | Distribution of electric field and design of devices in GaN avalanche photodiodes | 期刊论文 | Wu LiangLiang|Yang Hui|Zhao DeGang|Deng Yi|Jiang DeSheng|Zhu JianJun|Wang Hui|Liu ZongShun|Zhang ShuMing|Zhang BaoShun| |
| 29 | GaN-based violet laser diodes grown on free-standing GaN substrate | 期刊论文 | Zhang Li-Qun|Zhang Shu-Ming|Jiang De-Sheng|Wang Hui|Zhu Jian-Jun|Zhao De-Gang|Liu Zong-Shun|Yang Hui| |
| 30 | Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes | 期刊论文 | Le, L. C.|Zhu, J. J.|Wang, H.|Zhang, S. M.|Yang, H.|Zhao, D. G.|Jiang, D. S.|Li, L.|Wu, L. L.|Chen, P.|Liu, Z. S.|Li, Z. C.|Fan, Y. M.| |
| 31 | 测量直接带隙半导体材料禁带宽度的装置和方法， | 专利 | 刘宗顺 |
| 32 | The investigation on strain relaxation and double peaks in photoluminescence of InGaN/GaN MQW layers | 期刊论文 | Zhu, J. H.|Yang, H.|Wang, L. J.|Zhang, S. M.|Wang, H.|Zhao, D. G.|Zhu, J. J.|Liu, Z. S.|Jiang, D. S.|Qiu, Y. X.| |
| 33 | Ⅲ族氮化物纳米材料的生长方法 | 专利 | |
| 34 | Cathodoluminescence study on in composition inhomogeneity of thick InGaN layer | 期刊论文 | Wang, H.|Jiang, D. S.|Jahn, U.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.|Zhang, S. M.|Yang, H.| |
| 35 | 利用激光划片解理氮化镓基激光器管芯的方法 | 专利 | |
| 36 | Nonpolar growth and characterization of InN overlayers on vertically oriented GaN nanorods | 期刊论文 | sun, Xian|Zhang, Shuming|You, Liping|Ma, Renmin|Yang, Hui|Jiang, Desheng|Liu, Wenbao|Zhu, Jihong|Wang, Hui|Liu, Zongshun|Zhu, Jianjun|Wang, Yutian|Zhao, Degang| |
| 37 | 一种InGaN半导体光电极的制作方法 | 专利 | |
| 38 | 基于氮化镓材料的新型结构紫外双色探测器 | 专利 | |
| 39 | Investigation on the strain relaxation of InGaN layer and its effects on the InGaN structural and optical properties | 期刊论文 | Wang, H.|Jiang, D. S.|Jahn, U.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.|Zhang, S. M.|Qiu, Y. X.|Yang, H.| |
| 40 | 测量肖特基势垒高度的装置和方法 | 专利 | 刘宗顺 |
| 41 | InGaN/GaN p-i-n Photodiodes Fabricated with Mg-Doped p-InGaN Layer | 期刊论文 | Wang Hui|Zhu Ji-Hong|Jiang De-Sheng|Zhu Jian-Jun|Zhao De-Gang|Liu Zong-Shun|Zhang Shu-Ming|Yang Hui| |
| 42 | Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition | 期刊论文 | Zhao, D. G.|Jia, Q. J.|Yang, Hui|Jiang, D. S.|Le, L. C.|Wu, L. L.|Li, L.|Zhu, J. J.|Wang, H.|Liu, Z. S.|Zhang, S. M.| |
| 43 | Kinetically controlled InN nucleation on GaN templates by metalorganic chemical vapour deposition | 期刊论文 | Wang, H.|Jiang, D. S.|Zhu, J. J.|Zhao, D. G.|Liu, Z. S.|Wang, Y. T.|Zhang, S. M.|Yang, H.| |
| 44 | The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition | 期刊论文 | Le Ling-Cong|Zhang Bao-Shun|Yang Hui|Zhao De-Gang|Wu Liang-Liang|Deng Yi|Jiang De-Sheng|Zhu Jian-Jun|Liu Zong-Shun|Wang Hui|Zhang Shu-Ming| |
| 45 | Formation of Low-Resistant and Thermally Stable Nonalloyed Ohmic Contact to N-Face n-GaN | 期刊论文 | Zeng Chang|Jiang De-Sheng|Yang Hui|Zhang Shu-Ming|Wang Hui|Liu Jian-Ping|Wang Huai-Bing|Li Zeng-Cheng|Feng Mei-Xin|Zhao De-Gang|Liu Zong-Shun| |
| 46 | Influence of penetrating V-pits on leakage current of GaN based p-i-n UV detector | 期刊论文 | Zhang Shuang|Yang Hui|Zhao De-Gang|Liu Zong-Shun|Zhu Jian-Jun|Zhang Shu-Ming|Wang Yu-Tian|Duan Li-Hong|Liu Wen-Bao|Jiang De-Sheng| |
| 47 | The investigation on carrier distribution in InGaN/GaN multiple quantum well layers | 期刊论文 | Zhu, J. H.|Zhang, S. M.|Wang, H.|Zhao, D. G.|Zhu, J. J.|Liu, Z. S.|Jiang, D. S.|Qiu, Y. X.|Yang, H.| |
| 48 | Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars | 期刊论文 | Zhu, Jihong|Wang, Liangji|Zhang, Shuming|Wang, Hui|Zhao, Degang|Zhu, Jianjun|Liu, Zongshun|Jiang, Desheng|Yang, Hui| |
| 49 | Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition | 期刊论文 | Zhao, D. G.|Jiang, D. S.|Zhu, J. J.|Liu, Z. S.|Zhang, S. M.|Yang, Hui|Jahn, U.|Ploog, K. H.| |
| 50 | Microstructure and strain analysis of GaN epitaxial films using in-plane grazing incidence x-ray diffraction | 期刊论文 | Guo Xi|Xu Ke|Yang Hui|Wang Yu-Tian|Zhao De-Gang|Jiang De-Sheng|Zhu Jian-Jun|Liu Zong-Shun|Wang Hui|Zhang Shu-Ming|Qiu Yong-Xin| |
| 51 | Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition | 期刊论文 | Deng, Y.|Yang, Hui|Liang, J. W.|Zhao, D. G.|Le, L. C.|Jiang, D. S.|Wu, L. L.|Zhu, J. J.|Wang, H.|Liu, Z. S.|Zhang, S. M.| |
| 52 | An Anomalous Gain Mechanism in GaN Schottky Barrier Ultraviolet Photodetectors | 期刊论文 | Zhao De-Gang|Jiang De-Sheng|Liu Zong-Shun|Zhu Jian-Jun|Wang Hui|Zhang Shu-Ming|Yang Hui| |
| 53 | Structural and optical properties of Al1-xInxN epilayers on GaN template grown by metalorganic chemical vapor deposition | 期刊论文 | Lu Guo-Jun|Zhu Jian-Jun|Jiang De-Sheng|Wang Yu-Tian|Zhao De-Gang|Liu Zong-Shun|Zhang Shu-Ming|Yang Hui| |
| 54 | Evaluation of both composition and strain distributions in InGaN epitaxial film using x-ray diffraction techniques | 期刊论文 | Guo Xi|Wang Hui|Jiang De-Sheng|Wang Yu-Tian|Zhao De-Gang|Zhu Jian-Jun|Liu Zong-Shun|Zhang Shu-Ming|Yang Hui| |
| 55 | An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells | 期刊论文 | Zhao, D. G.|Jiang, D. S.|Zhu, J. J.|Wang, H.|Liu, Z. S.|Zhang, S. M.|Wang, Y. T.|Jia, Q. J.|Yang, Hui| |
| 56 | Effect of light Si-doping on the near-band-edge emissions in high quality GaN | 期刊论文 | Le, L.C.1|Zhang, S.M.2|Yang, H.1, 2|Zhao, D.G.1|Jiang, D.S.1|Wu, L.L.1|Li, L.1|Chen, P.1|Liu, Z.S.1|Zhu, J.J.2|Wang, H.2| |
| 57 | GaN基激光器的特性 | 期刊论文 | 张立群|张书明|江德生|朱建军|赵德刚|杨辉| |
| 58 | 氮化镓基激光器外延结构及其制作方法 | 专利 | 曾畅 |
| 59 | Quadratic electro-optic effect in GaN-based materials | 期刊论文 | Chen, P.|Zhao, D. G.|Zuo, Y. H.|Jiang, D. S.|Liu, Z. S.|Wang, Q. M.| |
| 60 | 一种紫外红外双色探测器及制作方法 | 专利 | |
| 61 | F-P腔半导体激光器腔面钝化的方法 | 专利 | 冯美鑫 |
| 62 | Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer | 期刊论文 | Wu Yu-Xin|Yang Hui|Zhu Jian-Jun|Chen Gui-Feng|Zhang Shu-Ming|Jiang De-Sheng|Liu Zong-Shun|Zhao De-Gang|Wang Hui|Wang Yu-Tian| |
| 63 | The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates | 期刊论文 | Wu Yu-Xin|Yang Hui|Zhu Jian-Jun|Zhao De-Gang|Liu Zong-Shun|Jiang De-Sheng|Zhang Shu-Ming|Wang Yu-Tian|Wang Hui|Chen Gui-Feng| |
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