采用转移掺杂介质的氢终端金刚石场效应管制备、特性和稳定性研究
61874080
2018
F0404.半导体电子器件与集成
张金风
面上项目
教授
西安电子科技大学
63万元
转移掺杂;热稳定性;金刚石;场效应管
2019-01-01到2022-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Numerical Investigation of Laterally Downscaled Hydrogen-Terminated Diamond FETs | 期刊论文 | Junfei Chen;Yong Wu;Jinfeng Zhang;Dong Wang;Zeyang Ren;Xing Chen;Yingyi Lei;Jincheng Zhang;Yue Hao |
| 2 | High Mobility Normally-OFF Hydrogenated Diamond Field Effect Transistors With BaF₂ Gate Insulator Formed by Electron Beam Evaporator | 期刊论文 | Qi He;Kai Su;Jinfeng Zhang;Zeyang Ren;Yufei Xing;Jincheng Zhang;Yingyi Lei;Yue Hao |
| 3 | 单晶金刚石的扩径生长方法 | 专利 | 张金风;任泽阳;张进成;苏凯;郝跃 |
| 4 | Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al2O3 Gate Dielectric | 期刊论文 | Zeyang Ren;Qi He;Jiamin Xu;Guansheng Yuan;Jinfeng Zhang;Jincheng Zhang;Kai Su;Yue Hao |
| 5 | Polycrystalline diamond normally-off MESFET passivated by a MoO3 layer | 期刊论文 | Zeyang Ren;Zhenfang Liang;Kai Su;Yufei Xing;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Yue Hao |
| 6 | 一种基于金刚石衬底的氮化镓器件及其制备方法 | 专利 | 任泽阳;张金风;吕丹丹;张进成;苏凯;张雅超;郝跃 |
| 7 | 基于WO3/Al2O3双层栅介质的零栅源间距金刚石场效应晶体管及制作方法 | 专利 | 张金风;刘俊;任泽阳;陈万娇;张进成;郝跃 |
| 8 | Diamond MOSFET with MoO3/Si3N4 doubly stacked gate dielectric | 期刊论文 | Zeyang Ren;Senchuan Ding;Zhenfang Liang;Qi He;Kai Su;Jinfeng Zhang;Jincheng Zhang;Chunfu Zhang;Yue Hao |
| 9 | H-diamond MOS interface properties and FET characteristics with high-temperature ALD-grown HfO2 dielectric | 期刊论文 | Zeyang Ren;Yufei Xing;Dandan Lv;Jiamin Xu;Jinfeng Zhang;Jincheng Zhang;Kai Su;Chunfu Zhang;Hong Zhang;Qi He;Yue Hao |
| 10 | Normally-off polycrystalline C H diamond MISFETs with MgF2 gate insulator and passivation | 期刊论文 | Qi He;Jinfeng Zhang;Zeyang Ren;Jincheng Zhang;Kai Su;Yingyi Lei;Dandan Lv;Tianhe Mi;Yue Hao |
| 11 | Performance of H-diamond MOSFETs with high temperature ALD grown HfO2 dielectric | 期刊论文 | Zeyang Ren;Dandan Lv;Jiamin Xu;Kai Su;Jinfeng Zhang;Dong Wang;Yong Wu;Jincheng Zhang;Yue Hao |
| 12 | High temperature (300 °C) ALD grown Al2O3 on hydrogen terminated diamond: Band offset and electrical properties of the MOSFETs | 期刊论文 | Zeyang Ren;Dandan Lv;Jiamin Xu;Jinfeng Zhang;Jincheng Zhang;Kai Su;Chunfu Zhang;Yue Hao |
| 13 | Microwave power performance analysis of hydrogen terminated diamond MOSFET | 期刊论文 | Ao Cui;Jinfeng Zhang;Zeyang Ren;Hong Zhou;Dong Wang;Yong Wu;Yingyi Lei;Jincheng Zhang;Yue Hao |
| 14 | 一种复合终端表面金刚石高压场效应晶体管及其制作方法 | 专利 | 任泽阳;梁振芳;张金风;吕丹丹;何琦;苏凯;张进成;郝跃 |
| 15 | Normally-Off Hydrogen-Terminated Diamond Field Effect Transistor With Ferroelectric HfZrOx/Al2O3 Gate Dielectrics | 期刊论文 | Su Kai;Ren Zeyang;Peng Yue;Zhang Jinfeng;Zhang Jincheng;Zhang Yachao;He Qi;Zhang Chunfu;Hao Yue |
| 16 | 金刚石半导体器件前沿技术 | 专著 | 张金风;张景文;蔚翠;刘金龙 |
| 17 | Characterization and Mobility Analysis of Normally off Hydrogen‐Terminated Diamond Metal–Oxide–Semiconductor Field‐Effect Transistors | 期刊论文 | Jin-Feng Zhang;Wan-Jiao Chen;Ze-Yang Ren;Kai Su;Peng-Zhi Yang;Zhuang-Zhuang Hu;Jin-Cheng Zhang;Yue Hao |
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