基于铁电薄膜HfZrO/Al2O3叠层栅介质的增强型GaN基MFS-HEMT器件研究
61874036
2018
F0404.半导体电子器件与集成
李海鸥
面上项目
教授
桂林电子科技大学
63万元
氮化镓;铁电薄膜;宽禁带半导体;HEMT
2019-01-01到2022-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Interface and electrical properties of buried InGaAs channel MOSFET with an InP barrier layer and Al2O3/HfO2/Al2O3 gate dielectrics | 期刊论文 | Li Yue;Chen Yonghe;Sun Tangyou;Fabi Zhang;Cao Mingmin;Qi Li;Fu Tao;Gongli Xiao;Yingbo Liu;Honggang Liu;Haiou Li |
| 2 | Enhancement of fMAX of InP-based HEMTs by double-recessed offset gate process | 期刊论文 | Bo Wang;Peng Ding;Rui-ze Feng;Shu-Rui Cao;Hao-miao Wei;Tong Liu;Xiao-yu Liu;Hai-ou Li;Zhi Jin |
| 3 | High Temperature Conductive Stability of Indium Tin Oxide Films | 期刊论文 | Haiou Li;Lei Guo;Liu Xingpeng;Sun Tangyou;Qi Li;Fabi Zhang;Gongli Xiao;Fu Tao;Chen Yonghe |
| 4 | 基于场氧层电场调制的功率器件 | 专利 | 李海鸥;罗乐;李琦 |
| 5 | Resistive switching of self-assembly stacked h-BN polycrystal film | 期刊论文 | Tangyou Sun;Jie Tu;Zhiping Zhou;Rong Sun;Xiaowen Zhang;Haiou Li;Zhimou Xu;Ying Peng;Xingpeng Liu;Peihua Wangyang;Zhongchang Wang |
| 6 | Reliability of Buried InGaAs Channel n-MOSFETs With an InP Barrier Layer and Al2O3 Dielectric Under Positive Bias Temperature Instability Stress | 期刊论文 | Haiou Li;Kangchun Qu;Xi Gao;Yue Li;Yonghe Chen;Zhiping Zhou;Lei Ma;Fabi Zhang;Xiaowen Zhang;Tao Fu;Xingpeng Liu;Yingbo Liu;Tangyou Sun;Honggang Liu |
| 7 | High Anti-Reflection Large-Scale Cup-Shaped Nano-Pillar Arrays via Thin Film Anodic Aluminum Oxide Replication | 期刊论文 | Tangyou Sun;Furong Shui;Xiancui Yang;Zhiping Zhou;Rongqiao Wan;Yun Liu;Cheng Qian;Zhimou Xu;Haiou Li;Wenjing Guo |
| 8 | Ferroelectricity and reliability performance of HfZrO films by N-plasma treatment on TiN electrode | 期刊论文 | Yue Li;Tianyang Feng;Tangyou Sun;Yonghe Chen;Fabi Zhang;Tao Fu;Peihua Wangyang;Haiou Li;Xingpeng Liu |
| 9 | 一种应用于MOS器件的偏压温度不稳定性的测试方法 | 专利 | 李海鸥;刘培;刘洪刚 |
| 10 | Morphology-dependent high antireflective surfaces via anodic aluminum oxide nanostructures | 期刊论文 | Haiou Li;Le Cao;Tao Fu;Qi Li;Fabi Zhang;Gongli Xiao;Yonghe Chen;Xingpeng Liu;Wenning Zhao;Zhiqiang Yu;Zhiping Zhou;Tangyou Sun |
| 11 | Impact of Al x Ga1-x N barrier thickness and Al composition on the electrical properties of ferroelectric HfZrO/Al2O3/AlGaN/GaN MFSHEMTs | 期刊论文 | Yue Li;Xing-peng Liu;Tang-you Sun;Fa-bi Zhang;Tao Fu;Pei-hua Wang-yang;Hai-ou Li;Yong-he Chen |
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