界面原子行为对三维GaN基结构生长和光电性能的影响
21471111
2014
B0203.表面化学
许并社
面上项目
教授
太原理工大学
80万元
氮化镓;发光二极管;三维核-壳结构;微/纳米棒阵列;界面
2015-01-01到2018-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N-2/H-2-Grown GaN Barrier | 期刊论文 | Zhou Xiaorun;Lu Taiping;Zhu Yadan;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Yang Yongzhen;Chen Yongkang;Xu Bingshe;Zhou Xiaorun;Lu Taiping;Zhu Yadan;Zhao Guangzhou;Jia Zhigang;Yang Yongzhen;Xu Bingshe;Lu TP;Yang YZ |
| 2 | 中高温GaN插入层厚度对蓝光LED光电性能的影响 | 期刊论文 | 刘青明;卢太平;朱亚丹;韩丹;董海亮;尚林;赵广洲;赵晨;周小润;翟光美;贾志刚;梁建;马淑芳;薛晋波;李学敏;许并社 |
| 3 | 一种GaN基LED外延结构及其制备方法 | 专利 | 卢太平;朱亚丹;赵广洲;许并社 |
| 4 | Structure and photoluminescence property of Eu, Tb, Zn-containing macromolecular complex for white light emission | 期刊论文 | Zhang Aiqin;Wang Qian;Zhang Aiqin;Xu Wei;Luo Gan;Dong Hailiang;Liang Jian;Shen Qianqian;Jia Husheng;Liu Xuguang;Xu Bingshe;Wang Qian;Xu Wei;Luo Gan;Dong Hailiang;Liang Jian;Shen Qianqian;Jia Husheng;Liu Xuguang;Xu Bingshe;Zhang AQ;Liang J |
| 5 | Advantages of InGaN/GaN multiple quantum wells with two-step grown low temperature GaN cap layers | 期刊论文 | Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe |
| 6 | 应变平衡有源区梯度势阱层半导体激光器结构 | 专利 | 许并社;董海亮;马淑芳;梁建;贾虎生;刘旭光 |
| 7 | Origin of huge photoluminescence efficiency improvement in InGaN/GaN multiple quantum wells with low-temperature GaN cap layer grown in N-2/H-2 mixture gas | 期刊论文 | Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe |
| 8 | 一种垂直结构发光二极管的制备方法 | 专利 | 李天保，;贾伟 ，;许并社;余春燕，;章海霞 |
| 9 | Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite | 期刊论文 | Li Tianbao;Liu Chenyang;Zhang Zhe;Yu Bin;Dong Hailiang;Jia Wei;Jia Zhigang;Yu Chunyan;Gan Lin;Xu Bingshe;Jiang Haiwei |
| 10 | 微米阵列LED制备方法 | 专利 | 许并社;韩丹;马淑芳;刘培植;贾伟;王美玲;柳建杰 |
| 11 | 一种DUV LED外延片结构 | 专利 | 卢太平，;朱亚丹，;赵广洲，;许并社 |
| 12 | 一种DUV LED外延片结构 | 专利 | 卢太平，;朱亚丹，;周小润，;许并社 |
| 13 | Interfacial relaxation analysis of InGaAs/GaAsP strain-compensated multiple quantum wells and its optical property | 期刊论文 | Dong Hailiang;Sun Jing;Ma Shufang;Liang Jian;Xuguang Liu;Zhigang Jia;Xu Bingshe |
| 14 | Effect of hydrogen treatment temperature on the properties of InGaN/GaN multiple quantum wells | 期刊论文 | Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe |
| 15 | GaN epitaxial layers grown on multilayer graphene by MOCVD | 期刊论文 | Tianbao Li;Chenyang Liu;Zhe Zhang;Bin Yu;Hailiang Dong;Wei Jia;Zhigang Jia;Chunyan Yu;Lin Gan;Bingshe Xu |
| 16 | Effect of light Si doping on the properties of GaN | 期刊论文 | Shang Lin;Zhai Guangmei;Jia Zhigang;Mei Fuhong;Lu Taiping;Liu Xuguang;Xu Bingshe |
| 17 | 基于GaN六棱锥阵列的LED外延结构及其制备方法 | 专利 | 贾伟，;仝广运，;李天保，;许并社 |
| 18 | 基于3D打印制备侧壁反光镜DUVLED | 专利 | 卢太平，;朱亚丹，;周小润，;许并社 |
| 19 | Enhanced light extraction efficiency of a InGaN/GaN micro-square array light-emitting diode chip | 期刊论文 | Han Dan;Jia Zhigang;Liu Peizhi;Jia Wei;Dong Hailiang;Zhai Guangmei;Xu Bingshe;Han Dan;Jia Zhigang;Liu Peizhi;Jia Wei;Dong Hailiang;Zhai Guangmei;Xu Bingshe;Ma Shufang;Shang Lin;Xu Bingshe |
| 20 | Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips | 期刊论文 | Han Dan;Ma Shufang;Jia Zhigang;Liu Peizhi;Jia Wei;Shang Lin;Zhai Guangmei;Xu Bingshe |
| 21 | 一种高发光效率氮化镓基LED外延片的制备方法 | 专利 | 卢太平;朱亚丹;赵广洲;许并社 |
| 22 | Effects of GaxZn1-xO nanorods on the photoelectric properties of n-ZnO nanorods/p-GaN heterojunction light-emitting diodes | 期刊论文 | Li Rui;Yu Chunyan;Dong Hailiang;Jia Wei;Li Tianbao;Zhang Zhuxia;Xu Bingshe |
| 23 | GaN衬底的腐蚀程度对ZnO纳米棒阵列光学性能的调控 | 期刊论文 | 庞泽鹏;梅伏洪;乔建东;尚林;余春燕;许并社 |
| 24 | Photoluminescence close to V-shaped pits in the quantum wells and enhanced output power for InGaN light emitting diode | 期刊论文 | Han Dan;Jia Zhigang;Jia Wei;Liu Peizhi;Dong Hailiang;Zhang Aiqin;Zhai Guangmei;Li Xuemin;Liu Xuguang;Xu Bingshe;Han Dan;Jia Zhigang;Jia Wei;Liu Peizhi;Dong Hailiang;Zhang Aiqin;Zhai Guangmei;Li Xuemin;Liu Xuguang;Xu Bingshe;Ma Shufang;Shang Lin;Xu Bingshe |
| 25 | Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD | 期刊论文 | Tianbao Li;Chenyang Liu;Zhe Zhang;Bin Yu;Hailiang Dong;Wei Jia;Zhigang Jia;Chunyan Yu;Lin Gan;Bingshe Xu;Haiwei Jiang |
| 26 | 一种高发光效率氮化镓基 LED外延片的制备方法 | 专利 | 卢太平;朱亚丹;许并社 |
| 27 | 一种高发光效率氮化镓基LED外延片的制备方法 | 专利 | 卢太平，;朱亚丹，;周小润，;许并社 |
| 28 | Influence of in-situ deposited SiNX interlayer on crystal quality of GaN epitaxial films | 期刊论文 | Teng Fan;Wei Jia;Guangyun Tong;Guangmei Zhai;Tianbao Li;Hailiang Dong;Bingshe Xu |
| 29 | 高光效发光二极管的关键技术及应用 | 奖励 | 李天保;梁建;张爱琴;陆路;党随虎;贾虎生 |
| 30 | 基于3D打印制备光子晶体结构LED的方法 | 专利 | 卢太平，;朱亚丹，;周小润，;许并社 |
| 31 | Effect of potential barrier height on the carrier transport in InGaAs/GaAsP multi-quantum wells and photoelectric properties of laser diode | 期刊论文 | Dong Hailiang;Sun Jing;Ma Shufang;Liang Jian;Lu Taiping;Jia Zhigang;Liu Xuguang;Xu Bingshe |
| 32 | Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells | 期刊论文 | Dong Hailiang;Sun Jing;Ma Shufang;Liang Jian;Lu Taiping;Xu Bingshe;Dong Hailiang;Sun Jing;Ma Shufang;Liang Jian;Lu Taiping;Xu Bingshe;Liu Xuguang;Xu BS;Xu BS |
| 33 | 类金字塔状GaN微米结构的生长及其形貌表征 | 期刊论文 | 赵 晨;贾伟;樊腾;仝广运;李天保;翟光美;马淑芳;许并社 |
| 34 | 一种LED外延结构及其制备方法 | 专利 | 贾伟，;樊腾，;李天保，;许并社 |
| 35 | 基于3D打印铁磁层增强LED发光效率的方法 | 专利 | 卢太平;朱亚丹;赵广洲;许并社 |
| 36 | A novel red emitting polymeric complex as a directly film-forming phosphor applied in NUV-based LEDs | 期刊论文 | Wang Bin;Zhang Aiqin;Jia Jing;Xu Wei;Shen Qianqian;Liu Xuguang;Jia Husheng;Zhang Aiqin;Jia Jing;Xu Wei;Shen Qianqian;Jia Husheng;Liu Xuguang;Zhang AQ;Jia HS |
| 37 | The morphologies and optical properties of three-dimensional GaN nano-cone arrays | 期刊论文 | Wang Haotian;Zhai Guangmei;Shang Lin;Ma Shufang;Jia Wei;Jia Zhigang;Liang Jian;Li Xuemin;Xu Bingshe |
| 38 | 一种GaN基绿光LED外延结构及其制备方法 | 专利 | 卢太平，;朱亚丹，;许并社 |
| 39 | PbS量子点能级结构的尺寸和配体依赖性及其对异质结电池性能的影响 | 期刊论文 | 王恒;翟光美;张继涛;杨永珍;刘旭光;李学敏;许并社 |
| 40 | Effect of small flow hydrogen treatment at the upper well/barrier interface on the properties of InGaN/GaN multiple quantum wells | 期刊论文 | Zhu Yadan;Lu Taiping;Zhou Xiaorun;Zhao Guangzhou;Dong Hailiang;Jia Zhigang;Liu Xuguang;Xu Bingshe |
| 41 | Effect of interface nucleation time of the GaN nucleation layer on the crystal quality of GaN film | 期刊论文 | Guo Rui-Hua;Lu Tai-Ping;Jia Zhi-Gang;Shang Lin;Zhang Hua;Wang Rong;Zhai Guang-Mei;Xu Bing-She |
| 42 | 一种GaN纳米棒阵列结构的制备方法 | 专利 | 贾伟，;樊腾，;李天保;许并社;李学敏;卢太平;梅伏洪 |
| 43 | The effect of nucleation layer thickness on the structural evolution and crystal quality of bulk GaN grown by a two-step process on cone-patterned sapphire substrate | 期刊论文 | Shang Lin;Zhai Guangmei;Mei Fuhong;Jia Wei;Yu Chunyan;Liu Xuguang;Xu Bingshe |
| 44 | The evolution of a GaN/sapphire interface with different nucleation layer thickness during two-step growth and its influence on the bulk GaN crystal quality | 期刊论文 | Shang Lin;Lu Taiping;Zhai Guangmei;Jia Zhigang;Zhang Hua;Ma Shufang;Li Tianbao;Liang Jian;Liu Xuguang;Xu Bingshe |
| 45 | Enhancement of carrier localization effect and internal quantum efficiency through In-rich InGaN quantum dots | 期刊论文 | Liu Jianjie;Jia Zhigang;Ma Shufang;Dong Hailiang;Zhai Guangmei;Xu Bingshe |
| 46 | 类金字塔状GaN微米锥的形貌及发光性能 | 期刊论文 | 仝广运，;贾伟，;樊腾，;董海亮，;李天保，;贾志刚，;许并社 |
| 47 | Preparation and properties of the flexible remote phosphor film for blue chip-based white LED | 期刊论文 | Jia Jing;Zhang Aiqin;Li Dongxin;Liu Xuguang;Xu Bingshe;Jia Husheng |
| 48 | Growth and optical properties of GaN pyramids using in-situ deposited SiNx layer | 期刊论文 | Tong Guangyun;Jia Wei;Fan Teng;Dong Hailiang;Li Tianbao;Jia Zhigang;Xu Bingshe |
| 49 | The Properties of p-GaN with Different Cp2Mg/Ga Ratios and Their Influence on Conductivity | 期刊论文 | Shang Lin;Ma Shufang;Liang Jian;Li Tianbao;Yu Chunyan;Liu Xuguang;Xu Bingshe |
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