高性能Ge/Si单光子雪崩倍增探测器基础研究
61534005
2015
F0403.半导体光电子器件与集成
陈松岩
重点项目
教授
厦门大学
300万元
雪崩离化率;增益带宽积;吸收倍增分离型雪崩光电探测器;红外单光子探测
2016-01-01到2020-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer | 期刊论文 | Lin Shaoming;Ke Shaoying;Ye Yujie;Huang Donglin;Wu Jinyong;Chen Songyan;Li Cheng;Wang Jianyuan;Huang Wei |
| 2 | Interface State Calculation of the Wafer-Bonded Ge/Si Single-Photon Avalanche Photodiode in Geiger Mode | 期刊论文 | Ke Shaoying;Lin Shaoming;Mao Danfeng;Ji Xiaoli;Huang Wei;Xu Jianfang;Li Cheng;Chen Songyan |
| 3 | Low resistivity Ta textured film formed on TaN | 期刊论文 | Wang Jianyuan;Xu Jianfang;Huang Wei;Li Jun;Huang Shihao;Lai Hongkai;Li Cheng;Chen Songyan |
| 4 | Nanosecond laser induce size-controllable SiGe islands with high Ge composition, large aspect ratio and defect-free characteristics | 期刊论文 | Qi Dongfeng;Huang Shihao;Wang Letian;Shi Meng;Chen Songyan;Grigoropoulos Costas P. |
| 5 | Silicon based GeSn pin photodetector for SWIR detection | 期刊论文 | Hui Cong;Chunlai Xue;Jun Zheng;Fan Yang;Kai Yu;Zhi Liu;Xu Zhang;Buwen Cheng;Qiming Wang |
| 6 | Innovative Ge-SiO2 bonding based on an intermediate ultra-thin silicon layer | 期刊论文 | Mao Danfeng;Ke Shaoying;Lai Shumei;Ruan Yujiao;Huang Donglin;Lin Shaoming;Chen Songyan;Li Cheng;Wang Jianyuan;Huang Wei |
| 7 | A review: wafer bonding of Si-based semiconductors. | 期刊论文 | Shaoying Ke;Jinrong Zhou;Ziwei Wang;Donglin Huang;Yuxiang Wang;Qiang Peng;Cheng Li;Songyan Chen |
| 8 | Interface Electric Field Confinement Effect of High-Sensitivity Lateral Ge/Si Avalanche Photodiodes | 期刊论文 | Wu Wenzhou;Liu Zhi;Zheng Jun;Zuo Yuhua;Cheng Buwen |
| 9 | Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics | 期刊论文 | Shaoying Ke;Jinrong Zhou;Ziwei Wang;Donglin Huang;Yuxiang Wang;Qiang Peng;Cheng Li;Songyan Chen |
| 10 | a-Ge的亲水性及其在Si-Si键合中的应用 | 会议论文 | 柯少颖;林绍铭;黄巍;李成;陈松岩 |
| 11 | Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film | 期刊论文 | Shaoying Ke;Jinrong Zhou;Donglin Huang;Ziwei Wang;Cheng Li;Songyan Chen |
| 12 | 48 GHz High-Performance Ge-on-SOI Photodetector With Zero-Bias 40 Gbps Grown by Selective Epitaxial Growth | 期刊论文 | Liu Zhi;Yang Fan;Wu Wenzhou;Cong Hui;Zheng Jun;Li Chuanbo;Xue Chunlai;Cheng Buwen;Wang Qiming |
| 13 | High gain-bandwidth product Ge/Si tunneling avalanche photodiode with high-frequency tunneling effect | 期刊论文 | Wu Wenzhou;Cheng Buwen;Zheng Jun;Liu Zhi;Li Chuanbo;Zuo Yuhua;Xue Chunlai |
| 14 | 56 Gbps high-speed Ge electro-absorption modulator | 期刊论文 | Zhi Liu;Xiuli Li;Chaoqun Niu;Jun Zheng;Chunlai Xue;Yuhua Zuo;Buwen Cheng |
| 15 | High-quality strain-relaxed Si0.72Ge0.28 layers grown by MBE-UHV/CVD combined deposition chamber | 期刊论文 | Qi Dongfeng;Liu Hanhui;Huang Donglin;Wang Letian;Chen Songyan;Grigoropoulos Costas P |
| 16 | Photocurrent enhancement by utilizing unidirectional excitation of surface plasmons | 会议论文 | Bavil Mehdi Afshari;Liu Zhi;Zhou Wuwen;Li Chuanbo;Cheng Buwen |
| 17 | Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector | 期刊论文 | Yang Fan;Yu Kai;Cong Hui;Xue Chunlai;Cheng Buwen;Wang Nan;Zhou Lin;Liu Zhi;Wang Qiming |
| 18 | 智能剥离制备GOI材料 | 期刊论文 | 赖淑妹;毛丹枫;陈松岩;李成;黄巍;汤丁亮 |
| 19 | Rapid thermal processing of hafnium dioxide thin films by remote plasma atomic layer deposition as high-k dielectrics | 期刊论文 | Zhang Xiao Ying;Hsu Chia Hsun;Cho Yun Shao;Zhang Sam;Lien Shui Yang;Zhu Wen Zhang;Xiong Fei Bing |
| 20 | Interface characteristics and electrical transport of Ge/Si heterojunction fabricated by low-temperature wafer bonding | 期刊论文 | Ke Shaoying;Ye Yujie;Wu Jinyong;Lin Shaoming;Huang Wei;Li Cheng;Chen Songyan |
| 21 | 一种超高质量SOI基键合Ge薄膜的制备方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 22 | A Technique of In-situ Annealing and Temperature Monitoring for Silicon Photomultipliers | 会议论文 | Hongmin Liu;Yu Peng;Jinyan Long;Wenxing Lv;Kun Liang;Ru Yang;Dejun Han |
| 23 | 一种无气泡坑超高质量SOI基Ge薄膜异质键合方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 24 | 一种无气泡无穿透位错Ge/Si异质混合集成方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 25 | High-power back-to-back dual-absorption germanium photodetector | 期刊论文 | Li Xiuli;Peng Linzhi;Liu Zhi;Liu Xiangquan;Zheng Jun;Zuo Yuhua;Xue Chunlai;Cheng Buwen |
| 26 | 横向收集结构锗硅半导体雪崩探测器的设计研究 | 期刊论文 | 叶余杰;柯少颖;吴金镛;李成;陈松岩 |
| 27 | 一种提高剥离Si基和SOI基Ge薄膜质量的方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 28 | 一种实现晶格阻断的零气泡Ge/Si异质混合集成方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 29 | 键合强度脆性键合样品截面透射电子显微镜的制备方法 | 专利 | 陈松岩;柯少颖;吴金镛;李成;黄巍 |
| 30 | Bubble evolution mechanism and defect repair during the fabrication of high-quality germanium on insulator substrate | 期刊论文 | Shaoying Ke;Jinrong Zhou;Shengquan He;Xuewen Ou;Cheng Li;Songyan Chen |
| 31 | Temperature-dependent interface characteristic of silicon wafer bonding based on an amorphous germanium layer deposited by DC-magnetron sputtering | 期刊论文 | Ke Shaoying;Lin Shaoming;Ye Yujie;Mao Danfeng;Huang Wei;Xu Jianfang;Li Cheng;Chen Songyan |
| 32 | Recovery Time of Silicon Photomultiplier with Epitaxial Quenching Resistors | 期刊论文 | Jiali Jiang;Jianquan Jia;Tianqi Zhao;Kun Liang;Ru Yang;Dejun Han |
| 33 | Silicon based GeSn p-i-n photodetector with longwave cutoff at 2.3 μm | 会议论文 | Hui Cong;Xue Chunlai;Zhen Jun;Yang Fan;Yu Kai;Cheng Buwen;Liu Zhi;Wang Qiming |
| 34 | 一种增强紫外波段响应度的硅雪崩光电二极管结构 | 专利 | 刘陶然;左玉华;郑军;陈丹;刘智;成步文 |
| 35 | 一种波导耦合的光电探测器及其制备方法 | 专利 | 刘智;成步文;郑军;薛春来 |
| 36 | Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiode | 期刊论文 | Shaoying Ke;Shaoming Lin;Danfeng Mao;Yujie Ye;Xiaoli Ji;Wei Huang;Cheng Li;Songyan Chen |
| 37 | Ge/Si单光子探测器的暗计数理论研究 | 会议论文 | 柯少颖;林绍铭;黄巍;李成;陈松岩 |
| 38 | 利用非晶锗薄膜实现低温Si/Si键合的方法 | 专利 | 陈松岩;柯少颖;林绍明;李成;黄巍 |
| 39 | Spin-on doping of phosphorus on Ge with a 9nm amorphous Si capping layer to achieve n plus lp shallow junctions through rapid thermal annealing | 期刊论文 | Liang Dongxue;Lin Guangyang;Huang Donglin;Ke Shaoying;Ruan Yujiao;Chen Songyan;Li Cheng;Huang Wei;Li Jun;Wang Jianyuan;Xu Jianfang |
| 40 | Pulse laser-induced size-controllable and symmetrical ordering of single-crystal Si islands | 期刊论文 | Qi Dongfeng;Tang Shiwei;Wang Letian;Dai Shixun;Shen Xiang;Wang Chen;Chen Songyan |
| 41 | An interdigital SiPM with coincidence measurement for rejection of dark noise | 期刊论文 | Yu Peng;Ruiheng Wang;Jianquan Jia;Tianqi Zhao;Kun Liang;Ru Yang;Dejun Han |
| 42 | Impact of nitrogen plasma passivation on the Al/n-Ge contact | 期刊论文 | Shumei Lai;Danfeng Mao;Yujiao Ruan;Yihong Xu;Zhiwei Huang;Wei Huang;Songyan Chen;Cheng Li;Jianyuan Wang;Dingliang Tang |
| 43 | 25 × 50 Gbps wavelength division multiplexing silicon photonics receiver chip based on a silicon nanowire-arrayed waveguide grating | 期刊论文 | Liu Zhi;Zhang Jiashun;Li Xiuli;Wang Liangliang;Li Jianguang;Xue Chunlai;An Junming;Cheng Buwen |
| 44 | 一种耐高温高质量SOI基剥离Ge薄膜的方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 45 | Multilayer Graphene-GeSn Quantum Well Heterostructure SWIR Light Source | 期刊论文 | Cong Hui;Yang Fan;Xue Chunlai;Yu Kai;Zhou Lin;Wang Nan;Cheng Buwen;Wang Qiming |
| 46 | 一种波导耦合的硅基光电探测器及其制备方法 | 专利 | 刘智;成步文;郑军;薛春来 |
| 47 | Geiger mode theoretical study of a wafer-bonded Ge on Si single-photon avalanche photodiode | 期刊论文 | Ke Shaoying;Lin Shaoming;Wei Huang;Wang Jianyuan;Cheng Buwen;Liang Kun;Li Cheng;Chen Songyan |
| 48 | Temperature-Dependent HfO2/Si Interface Structural Evolution and its Mechanism | 期刊论文 | Zhang Xiao Ying;Hsu Chia Hsun;Lien Shui Yang;Wu Wan Yu;Ou Sin Liang;Chen Song Yan;Huang Wei;Zhu Wen Zhang;Xiong Fei Bing;Zhang Sam |
| 49 | High Extinction Ratio Polarization Beam Splitter Realized by Separately Coupling | 期刊论文 | Niu Chaoqun;Liu Zhi;Li Xiuli;Liu Xiangquan;Wan Fengshuo;Zheng Jun;Cheng Buwen;Xue Chunlai;Zuo Yuhua |
| 50 | Surface Passivation of Silicon Using HfO2 Thin Films Deposited by Remote Plasma Atomic Layer Deposition System | 期刊论文 | Zhang Xiao-Ying;Hsu Chia-Hsun;Lien Shui-Yang;Chen Song-Yan;Huang Wei;Yang Chih-Hsiang;Kung Chung-Yuan;Zhu Wen-Zhang;Xiong Fei-Bing;Meng Xian-Guo |
| 51 | Realization of a time-correlated photon counting technique for fluorescence analysis | 期刊论文 | Dai Lei;Liu Jian;Liang Kun;Yang Ru;Han Dejun;Lu Bo |
| 52 | Feasibility of PET detector readout by high-density Silicon Photomultipliers with epitaxial quenching resistors | 期刊论文 | Liang K.;Li B.;Dai L.;Liu H.;Yang R.;Han D. |
| 53 | 一种图形化划道消除Ge/Si键合界面气泡的方法 | 专利 | 柯少颖;陈松岩;黄东林;周锦荣 |
| 54 | Enhanced light trapping in Ge-on-Si-on-insulator photodetector by guided mode resonance effect | 期刊论文 | Liu Zhi;Liu Jietao;Cheng Buwen;Zheng Jun;Li Chuanbo;Xue Chunlai;Wang Qiming |
| 55 | Low-temperature oxide-free silicon and germanium wafer bonding based on a sputtered amorphous Ge | 期刊论文 | Shaoying Ke;Yujie Ye;Shaoming Lin;Yujiao Ruan;Xiaoying Zhang;Wei Huang;Jianyuan Wang;Cheng Li;Songyan Chen |
| 56 | 高密度外延电阻淬灭硅光电倍增器研究 | 期刊论文 | 贾建权;江加丽;李佰成;王瑞恒;梁琨;杨茹;韩德俊 |
| 57 | Time-resolved analysis of thickness-dependent dewetting and ablation of silver films upon nanosecond laser irradiation | 期刊论文 | Qi Dongfeng;Paeng Dongwoo;Yeo Junyeob;Kim Eunpa;Wang Letian;Chen Songyan;Grigoropoulos Costas P |
| 58 | High-Performance Germanium Waveguide Photodetectors on Silicon | 期刊论文 | Li Xiu-Li;Liu Zhi;Peng Lin-Zhi;Liu Xiang-Quan;Wang Nan;Zhao Yue;Zheng Jun;Zuo Yu-Hua;Xue Chun-Lai;Cheng Bu-Wen |
| 59 | High-Density Silicon Photomultipliers with Epitaxial Quenching Resistors at Novel Device Laboratory | 会议论文 | H. Liu;Liang Kun;B. Li;Y. Peng;L. Dai;R. Yang;D. Han |
| 60 | A thin transition film formed by plasma exposure contributes to the germanium surface hydrophilicity | 期刊论文 | Lai Shumei;Mao Danfeng;Huang Zhiwei;Xu Yihong;Chen Songyan;Li Cheng;Huang Wei;Tang Dingliang |
| 61 | Si基Ge混合型波导光电探测器 | 专利 | 阮育娇;康品春;郑伟峰;陈松岩;刘翰辉;李成 |
| 62 | Bubble evolution mechanism and stress-induced crystallization in low-temperature silicon wafer bonding based on a thin intermediate amorphous Ge layer | 期刊论文 | Ke Shaoying;Lin Shaoming;Ye Yujie;Mao Danfeng;Huang Wei;Xu Jianfang;Li Cheng;Chen Songyan |
| 63 | Voltage sharing effect and interface state calculation of a wafer-bonding Ge/Si avalanche photodiode with an interfacial GeO2 insulator layer | 期刊论文 | Shaoying Ke;Shaoming Lin;Xin Li;Jun Li;Jianfang Xu;Cheng Li;Songyan Chen |
| 64 | 光电检测装置、系统和方法 | 专利 | 韩德俊;刘健;代雷 |
| 65 | Low-Temperature Fabrication of Wafer-Bonded Ge/Si p-i-n Photodiodes by Layer Exfoliation and Nanosecond-Pulse Laser Annealing | 期刊论文 | Ke Shaoying;Ye Yujie;Wu Jinyong;Liang Dongxue;Cheng Buwen;Li Zhiyong;Ruan Yujiao;Zhang Xiaoying;Huang Wei;Wang Jianyuan;Xu Jianfang;Li Cheng;Chen Songyan |
| 66 | 大动态范围外延电阻淬灭型硅光电倍增器 | 期刊论文 | 刘红敏;龙金燕;代雷;张鑫淦;梁琨;杨茹;韩德俊 |
| 67 | Interface characteristics of different bonded structures fabricated by low-temperature a-Ge wafer bonding and the application of wafer-bonded Ge/Si photoelectric device | 期刊论文 | Shaoying Ke;Yujie Ye;Jinyong Wu;Yujiao Ruan;Xiaoying Zhang;Wei Huang;Jianyuan Wang;Jianfang Xu;Cheng Li;Songyan Chen |
| 68 | Schottky barrier height modulation effect on n-Ge with TaN contact | 期刊论文 | Wang Jianyuan;Huang Wei;Xu Jianfang;Li Jun;Huang Shihao;Li Cheng;Chen Songyan |
| 69 | EQR SiPM with P-on-N diode configuration | 期刊论文 | Jian-Quan Jia;Jia-Li Jiang;Kun Liang;Ru Yang;De-Jun Han |
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