GaAs基InAsSb势垒型红外探测器的MOCVD生长与器件研究
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | 一种红外探测器及其制备方法 | 专利 | 黄勇;熊敏;杨辉 |
2 | High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application | 期刊论文 | Li Xin;Zhao Yu;Xiong Min;Wu Qi Hua;Teng Yan;Hao Xiu Jun;Huang Yong;Hu Shuang Yuan;Zhu Xin |
3 | Planar mid-infrared InAsSb photodetector grown on GaAs substrates by MOCVD | 期刊论文 | Tingting Wang;Min Xiong;YingChun Zhao;Xu Dong;Yu Zhao;Jingjun Miao;Yong Huang;Baoshun Zhang;Lixing Cao;Bohua Dong |
4 | 增强型光电探测器衬底的制备方法、其产物及增强型III-V光电探测器 | 专利 | 董旭;熊敏;张宝顺 |
5 | 一种红外探测器及其制备方法 | 专利 | 黄勇;熊敏;杨辉 |
6 | High-Performance Mid-Wavelength InAs/GaSb Superlattice Infrared Detectors Grown by Production-Scale Metalorganic Chemical Vapor Deposition | 期刊论文 | Huang Yong;Xiong Min;Wu Qihua;Dong Xu;Zhao Yingchun;Zhao Yu;Shi Wenhua;Miao Xiaohu;Zhang Baoshun |