Si基GaN增强型电力电子器件研究
61534007
2015
F0404.半导体电子器件与集成
刘新宇
重点项目
研究员
中国科学院微电子研究所
300万元
增强型;电力电子器件;硅基氮化镓
2016-01-01到2020-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Effects of thickness on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates | 期刊论文 | Li Heng;Shi Yang-Da;Feng Meixin;Sun Qian;Lu Tien-Chang |
| 2 | GaN与Si异质键合结构 | 专利 | 王鑫华;黄森;魏珂;刘新宇 |
| 3 | 面向GaN器件的介质生长系统及其操作方法 | 专利 | 刘新宇;王鑫华;黄森;魏珂;王文武;侯瑞兵 |
| 4 | 氮化镓器件介质生长方法及系统 | 专利 | 刘新宇;康玄武;王鑫华;黄森;魏珂;王文武;侯瑞兵 |
| 5 | 增强型GaN基功率晶体管器件及其制作方法 | 专利 | 黄森;刘新宇;康玄武;王鑫华;魏珂 |
| 6 | A Study of Efficiency Droop Phenomenon in GaN-Based Laser Diodes before Lasing | 期刊论文 | Mei-Xin Feng;Qian Sun;Jian-Ping Liu;Zeng-Cheng Li;Yu Zhou;Shu-Ming Zhang;Hui Yang |
| 7 | 基于氮化镓基增强型器件的探测器及其制作方法 | 专利 | 黄森;施雯;王鑫华;魏珂;刘新宇 |
| 8 | Semiconductor Device and Method for Manufacturing the Same | 专利 | Sen Huang;Xinyu Liu;Xinhua Wang;Ke Wei |
| 9 | GaN基功率晶体管结构及其制备方法 | 专利 | 赵瑞;黄森;毕岚;王鑫华;魏珂;刘新宇 |
| 10 | 0.9-A/mm, 2.6-V Flash-Like Normally-Off Al2O3/AlGaN/GaN MIS-HEMTs Using Charge Trapping Technique | 期刊论文 | Hou Bin;Ma Xiaohua;Zhu Jiejie;Yang Ling;Chen Weiwei;Mi Minhan;Zhu Qing;Chen Lixiang;Zhang Rong;Zhang Meng;Zhou Xiaowei;Hao Yue |
| 11 | Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices | 期刊论文 | Huang Sen;Liu Xinyu;Wang Xinhua;Kang Xuanwu;Zhang Jinhan;Shi Jingyuan;Wei Ke;Zheng Yingkui;Gao Hongwei;Sun Qian;Wang Maojun;Shen Bo;Chen Kevin J |
| 12 | Suppression and characterization of interface states at low-pressure-chemical-vapor-deposited SiNx/III-nitride heterostructures | 期刊论文 | Kexin Deng;Xinhua Wang;Sen Huang;Haibo Yin;Jie Fan;Wen Shi;Fuqiang Guo;Ke Wei;Yingkui Zheng;Jingyuan Shi;Haojie Jiang;Wenwu Wang;Xinyu Liu |
| 13 | Insight into the near-conduction band states at the crystallized interface between GaN and SiNx grown by low-pressure chemical vapor deposition | 期刊论文 | Xinyu Liu;Xinhua Wang;Yange Zhang;Ke Wei;Yingkui Zheng;Xuanwu Kang;Haojie Jiang;Junfeng Li;Wenwu Wang;Xuebang Wu;Xianping Wang;Sen Huang |
| 14 | GaN基增强型HEMT器件的制备方法 | 专利 | 周宇;钟耀宗;孙钱;冯美鑫;杨辉;高宏伟 |
| 15 | P型沟道GaN基结构及电子器件 | 专利 | 黄森;王鑫华;刘新宇;魏珂;施雯 |
| 16 | 半导体器件及其制备方法 | 专利 | 孙钱;苏帅;周宇;高宏伟;冯美鑫;杨辉 |
| 17 | III族氮化物低损伤刻蚀方法 | 专利 | 刘新宇;黄森;王鑫华;魏珂 |
| 18 | Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures | 期刊论文 | Zhang Jinhan;Kang Xuanwu;Wang Xinhua;Huang Sen;Chen Chen;Wei Ke;Zheng Yingkui;Zhou Qi;Chen Wanjun;Zhang Bo;Liu Xinyu |
| 19 | Determination of carbon-related trap energy level in (Al)GaN buffers for high electron mobility transistors through a room-temperature approach | 期刊论文 | Xin Chen;Yaozong Zhong;Yu Zhou;Hongwei Gao;Xiaoning Zhan;Shuai Su;Xiaolu Guo;Qian Sun;Zihui Zhang;Wengang Bi;Hui Yang |
| 20 | 一种浮空Y形栅的制备方法 | 专利 | 张鹏;孙保全;马晓华;武盛 |
| 21 | 一种用于制备GaN基电子器件的方法 | 专利 | 孙钱;周宇;刘建勋;孙秀建;詹晓宁;高宏伟;钟耀宗 |
| 22 | Low Interface State Device and Method for Manufacturing the Same | 专利 | Xinyu Liu;Sen Huang;Xinhua Wang;Ke Wei;Wenwu Wang;Junfeng Li;Chao Zhao |
| 23 | High Uniformity Normally-OFF GaN MIS-HEMTs Fabricated on Ultra-Thin-Barrier AlGaN/GaN Heterostructure | 期刊论文 | Sen Huang;Xinyu Liu;Xinhua Wang;Xuanwu Kang;Jinhan Zhang;Qilong Bao;Ke Wei;Yingkui Zheng;Chao Zhao;Hongwei Gao;Qian Sun;Zhaofu Zhang;Kevin J. Chen |
| 24 | 一种匹配(Al,In)GaN材料的超低界面态界面结构及其制备方法 | 专利 | 王鑫华;刘新宇;黄森;魏珂 |
| 25 | 氮化镓基电子器件及其制作方法 | 专利 | 郭富强;黄森;王鑫华;魏珂;刘新宇 |
| 26 | GaN增强型器件制备方法及形成的GaN增强型器件 | 专利 | 刘新宇 |
| 27 | DETECTOR BASED ON GALLIUM NITRIDE-BASED ENHANCEMENT-MODE DEVICE AND MANUFACTURING METHOD THEREOF | 专利 | Sen HUANG;Xinhua WANG;Ke WEI;Xinyu LIU;Wen SHI |
| 28 | High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111) | 期刊论文 | Li Zengcheng;Liu Legong;Huang Yingnan;Sun Qian;Feng Meixin;Zhou Yu;Zhao Hanmin;Yang Hui |
| 29 | 一种III族氮化物电子器件低温欧姆接触的制作方法 | 专利 | 黄森;刘新宇;王鑫华;魏珂 |
| 30 | 一种制作T型栅结构的电子束光刻方法 | 专利 | 张鹏;杨眉;马晓华;郝跃;武胜 |
| 31 | Unintentional incorporation of Ga in the nominal AlN spacer of AlInGaN/AlN/GaN Heterostructure | 期刊论文 | Dai Shujun;Gao Hongwei;Zhou Yu;Zhong Yaozong;Wang Jin;He Junlei;Zhou Rui;Feng Meixin;Sun Qian;Yang Hui |
| 32 | Direct Observation of Gate Leakage Paths in AlGaN/GaN High Electron Mobility Transistors by Electron Beam-Induced Current | 期刊论文 | Chen Lixiang;Ma Xiaohua;Zhu Jiejie;Hou Bin;Zhu Qing;Zhang Meng;Yang Ling;Yin Jun;Wu Jiafen;Hao Yue |
| 33 | High linearity and high power performance with barrier layer of sandwich structure and Al0.05GaN back barrier for X-band application | 期刊论文 | Hou Bin;Yang Ling;Mi Minhan;Zhang Meng;Yi Chupeng;Wu Mei;Zhu Qing;Lu Yang;Zhu Jiejie;Zhou Xiaowei;Lv Ling;Ma Xiaohua;Hao Yue |
| 34 | GaN-based Power Electronic Device and Method for Manufacturing the Same | 专利 | Sen Huang;Xinyu Liu;Xinhua Wang;Ke Wei;Qilong Bao;Wenwu Wang;Chao Zhao |
| 35 | High-Temperature-Recessed Millimeter-Wave AlGaN/GaN HEMTs With 42.8% Power-Added-Efficiency at 35 GHz | 期刊论文 | Zhang Yichuan;Wei Ke;Huang Sen;Wang Xinhua;Zheng Yingkui;Liu Guoguo;Chen Xiaojuan;Li Yankui;Liu Xinyu |
| 36 | A p‐GaN‐Gated Hybrid Anode Lateral Diode with a Thicker AlGaN Barrier Layer | 期刊论文 | Shuai Su;Yaozong Zhong;Yu Zhou;Hongwei Gao;Xiaoning Zhan;Xin Chen;Xiaolu Guo;Qian Sun;Zihui Zhang;Wengang Bi;Hui Yang |
| 37 | 一种用于制备GaN基高频微波器件的方法 | 专利 | 孙钱;周宇;高宏伟 |
| 38 | GaN基单片功率逆变器及其制作方法 | 专利 | 黄森;刘新宇;王鑫华;康玄武;魏珂 |
| 39 | Effect of interface and bulk traps on the C-V characterization of a LPCVD-SiNx/AlGaN/GaN metal-insulator-semiconductor structure | 期刊论文 | Bao Qilong;Huang Sen;Wang Xinhua;Wei Ke;Zheng Yingkui;Li Yankui;Yang Chengyue;Jiang Haojie;Li Junfeng;Hu Anqi;Yang Xuelin;Shen Bo;Liu Xinyu;Zhao Chao |
| 40 | GaN MIS-HEMT大信号PSPICE模型的建模方法及模型 | 专利 | 刘春雨;王鑫华;黄森;魏珂;刘新宇 |
| 41 | Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs | 期刊论文 | Liu Zhaoyang;Huang Sen;Bao Qilong;Wang Xinhua;Wei Ke;Jiang Haojie;Cui Hushan;Li Junfeng;Zhao Chao;Liu Xinyu;Zhang Jinhan;Zhou Qi;Chen Wanjun;Zhang Bo;Jia Lifang |
| 42 | 一种GaN基增强型电子器件的材料结构 | 专利 | 黄森;刘新宇;康玄武;王鑫华;魏珂 |
| 43 | 氮化镓基功率开关器件及其制作方法 | 专利 | 康玄武;刘新宇;黄森;王鑫华;魏珂 |
| 44 | Evolution of traps in TiN/O-3-sourced Al2O3/GaN gate structures with thermal annealing temperature | 期刊论文 | Liu Xinyu;Huang Sen;Bao Qilong;Wang Xinhua;Wei Ke;Li Yankui;Xiang Jinjuan;Zhao Chao;Yang Xuelin;Shen Bo;Guo Shiping |
| 45 | GaN基鳍栅增强型器件及其制作方法 | 专利 | 李培咸;翟少鹏;霍荡荡;张濛;马晓华;郝跃 |
| 46 | 低界面态器件及制造方法 | 专利 | 刘新宇;黄森;王鑫华;魏珂;王文武;李俊峰;赵超 |
| 47 | Single step electron-beam lithography archiving lift-off for T-gate in high electron mobility transistor fabrication | 期刊论文 | Baoquan Sun;Peng Zhang;Teng Zhang;Shaofei Shangguan;Sheng Wu;Xiaohua Ma |
| 48 | 一种GaN基增强型功率电子器件及其制作方法 | 专利 | 刘新宇;黄森;王鑫华;康玄武;魏珂 |
| 49 | GaN基HEMT器件栅极结构 | 专利 | 黄森;刘新宇;王鑫华;康玄武;魏珂 |
| 50 | Stress evolution in AlN and GaN grown on Si(111): experiments and theoretical modeling | 期刊论文 | Dai Yiquan;Li Shuiming;Gao Hongwei;Wang Weihui;Sun Qian;Peng Qing;Gui Chengqun;Qian Zhengfang;Liu Sheng |
| 51 | High f(T) AlGa(In)N/GaN HEMTs Grown on Si With a Low Gate Leakage and a High ON/OFF Current Ratio | 期刊论文 | Dai Shujun;Zhou Yu;Zhong Yaozong;Zhang Kai;Zhu Guangrun;Gao Hongwei;Sun Qian;Chen Tangsheng;Yang Hui |
| 52 | Gate Reliability and its Degradation Mechanism in the Normally-off High Electron Mobility Transistors with Regrown p-GaN Gate | 期刊论文 | Yaozong Zhong;Shuai Su;Xin Chen;Yu Zhou;Hongwei Gao;Xiaoning Zhan;Xiaolu Guo;Shuming Zhang;Qian Sun;Hui Yang |
| 53 | Properties of AlN film grown on Si (111) | 期刊论文 | Dai Yiquan;Li Shuiming;Sun Qian;Peng Qing;Gui Chengqun;Zhou Yu;Liu Sheng |
| 54 | Suppression of Gate Leakage Current in Ka-Band AlGaN/GaN HEMT With 5-nm SiN Gate Dielectric Grown by Plasma-Enhanced ALD | 期刊论文 | Sheng Zhang;Xinyu Liu;Ke Wei;Sen Huang;Xiaojuan Chen;Yichuan Zhang;Yingkui Zheng;Guoguo Liu;Tingting Y uan;Xinhua Wang;Haibo Yin;Yao Yao;Jiebin Niu |
| 55 | Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess | 期刊论文 | Yijun Shi;Sen Huang;Qilong Bao;Xinhua Wa;Ke Wei;Haojie Jiang;Junfeng Li;Chao Zhao;Shuiming Li;Yu Zhou;Hongwei Gao;Qian Sun;Hui Yang;Jinhan Zhang;Wanjun Chen;Qi Zhou;Bo Zhang;Xinyu Liu |
| 56 | 基于非极性GaN体材料的肖特基二极管的制备方法 | 专利 | 张进成;杜金娟;许晟瑞;郝跃;吕玲;李培咸;陶鸿昌;林志宇;张金风 |
| 57 | 应变调控的增强型GaN基FinFET结构 | 专利 | 王鑫华;王泽卫;黄森;魏珂;刘新宇 |
| 58 | 一种新型高频半导体栅极的制作方法 | 专利 | 张鹏;孙保全;马晓华;武盛 |
| 59 | GaN基超结型垂直功率晶体管及其制作方法 | 专利 | 黄森;王鑫华;刘新宇;王元琨;殷海波;魏珂 |
| 60 | Device physics towards high performance GaN-based power electronics | 期刊论文 | H. Sen;Y. Shu;T. ZhiKai;H. MengYuan;W. XinHua;W. Ke;B. QiLong;L. XinYu;C. Jing |
| 61 | 基于复合势垒层结构的III族氮化物增强型HEMT及其制作方法 | 专利 | 孙钱;周宇;钟耀宗;高宏伟 |
| 62 | Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si | 期刊论文 | Sun Yi;Zhou Kun;Sun Qian;Liu Jianping;Feng Meixin;Li Zengcheng;Zhou Yu;Zhang Liqun;Li Deyao;Zhang Shuming;Ikeda Masao;Liu Sheng;Yang Hui |
| 63 | GaN基器件中阻止欧姆接触铝元素横向扩散的方法 | 专利 | 王鑫华;黄森;魏珂;刘新宇 |
| 64 | Off-state electrical breakdown of AlGaN/GaN/Ga(Al)N HEMT heterostructure grown on Si(111) | 期刊论文 | Li Shuiming;Zhou Yu;Gao Hongwei;Dai Shujun;Yu Guohao;Sun Qian;Cai Yong;Zhang Baoshun;Liu Sheng;Yang Hui |
| 65 | 一种新型半导体栅极的制作方法 | 专利 | 张鹏;孙保全;马晓华;武盛 |
| 66 | 硅基氮化镓外延结构及其制备方法 | 专利 | 孙钱;刘建勋;孙秀健;詹晓宁;高宏伟;黄应男;杨辉 |
| 67 | Interface Charge Effects on 2-D Electron Gas in Vertical-Scaled Ultrathin-Barrier AlGaN/GaN Heterostructure | 期刊论文 | Sen Huang;Xinhua Wang;Xinyu Liu;Yuchen Li;Jie Fan;Haibo Yin;Ke Wei;Yingkui Zheng;Qian Sun;Bo Shen |
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