Si图形衬底上非极性/半极性GaN材料外延生长及物性研究

61874108
2018
F0401.半导体材料
赵桂娟
面上项目
副教授
兰州大学
63万元
氮化镓;硅图形衬底;非极性/半极性;缺陷
2019-01-01到2022-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 面内双轴应力作用下单层黑磷能带性质研究 期刊论文 王洁;许炎;刘贵鹏;田永辉;杨建红
2 Band alignment of monolayer MoS2/4H-SiC heterojunction via first-principles calculations and x-ray photoelectron spectroscopy 期刊论文 Bangyao Mao;Xiurui Lv;Guijuan Zhao;Shu’an Xing;Jinjin Tang;Heyuan Huang;Guipeng Liu;Yong Gao
3 一种硅衬底上生长半极性(11-22)面氮化镓的方法 专利 赵桂娟;茆邦耀;邢树安;刘贵鹏
4 Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by proton irradiation 期刊论文 Tang Jinjin;Liu Guipeng;Song Jiayu;Zhao Guijuan;Yang Jianhong
5 一种GaN薄膜及其制备方法 专利 赵桂娟;邢树安;刘贵鹏;汤金金
6 Tuning the mechanical and electronic properties and carrier mobility of phosphorene: via family atom doping: a first-principles study 期刊论文 Xu Yan;Liu Guipeng;Xing Shu'an;Zhao Guijuan;Yang Jianhong
7 Comparative investigation of semipolar (11-22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD 期刊论文 Bangyao Mao;Shu'an Xing;Guijuan Zhao;Lianshan Wang;Ning Zhang;Hailong Du;Guipeng Liu
8 Valence band offset of ReS2/BN heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 Heyuan Huang;Wenge Yang;Shu'an Xing;Guijuan Zhao;Xunshuan Li;Guipeng Liu;Jianhong Yang
9 Investigation of band alignment at two-dimensional ReS2/XSe2 (X=W, Mo) heterojunctions using x-ray/ultraviolet photoelectron spectroscopy 期刊论文 Heyuan Huang;Guijuan Zhao;Shu'an Xing;Bangyao Mao;Xiurui Lv;Guipeng Liu;Xunshuan Li;Wenge Yang;Jianhong Yang
10 Effect of proton irradiation on the mobility of two-dimensional electron in AlGaN/AlN/GaN high electron mobility transistors at low temperature 期刊论文 Tang Jinjin;Liu Guipeng;Zhao Guijuan;Xing Shu’an;Malik Salamat Ali
11 Properties of monolayer black phosphorus affected by uniaxial strain 期刊论文 Yan Xu;Jie Wang;Guipeng Liu;Guijuan Zhao;Yonghui Tian;Jianhong Yang
12 Band alignment of two-dimensional h-BN/MoS2 van der Waals heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 Shu’an Xing;Guijuan Zhao;Jie Wang;Yan Xu;Zhixin Ma;Xunshuan Li;Jianhong Yang;Guipeng Liu;Wenge Yang
13 1 MeV Xe离子辐照对4H-SiC肖特基二极管的性能影响研究 期刊论文 茆邦耀;刘建德;汤金金;尹晋超;刘贵鹏;赵桂娟
14 Dipole-regulated bandgap and high electron mobility for bilayer Janus MoSiGeN4 期刊论文 Xiurui Lv;Heyuan Huang;Bangyao Mao;Guipeng Liu;Guijuan Zhao;Jianhong Yang
15 The Same Band Alignment of Two Hybrid 2d/3d Vertical Heterojunctions Formed by Combining Monolayer Mos2 with Semi-Polar (11-22) Gan and C-Plane (0001) Gan 期刊论文 Shu'an Xing;Guijuan Zhao;Bangyao Mao;Heyuan Huang;Lianshan Wang;Xunshuan Li;Wenge Yang;Guipeng Liu;Jianhong Yang
16 Influence of AlGaN back-barrier on irradiation tolerance of AlGaN/AlN/GaN HEMTs 期刊论文 Jinjin Tang;Guipeng Liu;Bangyao Mao;Salamat Ali;Guijuan Zhao;Jianhong Yang
17 Theoretical Study on InAlAs/InGaAs Single Photon Avalanche Detectors (SPADs) with Self-Feedback 期刊论文 Guipeng Liu;Jinjin Tang;Xin Wang;Jingze Zhao;Yafeng Song;Guijuan Zhao;Jianhong Yang
18 Determination of band alignment in two-dimensional h-BN/WS2 van der waals heterojunction by X-ray photoelectron spectroscopy 期刊论文 Xing Shu’an;Zhao Guijuan;Xu Yan;Wang Jie;Li Xunshuan;Yang Wenge;Liu Guipeng;Yang Jianhong
19 Strain modulation of electronic and optical properties of monolayer MoSi2N4 期刊论文 Xiurui Lv;Yan Xu;Bangyao Mao;Guipeng Liu;Guijuan Zhao;Jianhong Yang
20 Analysis of Improved 2D Electron Gas Mobility in InAlN/AlN/InGaN High‐Electron‐Mobility Transistors with GaN Interlayer 期刊论文 Jinjin Tang;Guipeng Liu;Bangyao Mao;Guijuan Zhao;Jianhong Yang
21 一种制备平行斜刻凹槽图形化硅衬底的方法 专利 赵桂娟;茆邦耀;邢树安;刘贵鹏
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