适于阻变存储器无源交叉阵列的双向选通管及其物理机制研究
61574070
2015
F0408.新型信息器件
李颖弢
面上项目
教授
兰州大学
16万元
整流特性;交叉阵列;高密度阵列;阻变存储器;阻变特性
2016-01-01到2016-12-31
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Self-compliance multilevel storage characteristic in HfO2-based device | 期刊论文 | Liping Fu|Chuanbing Chen|Peng Yuan|Yingtao Li| |
| 2 | Improvement of resistive switching fluctuations by using one step lift-off process | 期刊论文 | Liping Fu|Peng Yuan|Hong Wang|Chunlan Tao| |
| 3 | Excellent nonlinearity of a selection device based on anti-series connected Zener diodes for ultrahigh-density bipolar RRAM arrays | 期刊论文 | Liping Fu|Xiaoping Gao|Yang Wang|Chunlan Tao| |
| 4 | Low-cost bidirectional selector based on Ti/TiO2/HfO2/TiO2/Ti stack for bipolar RRAM arrays | 期刊论文 | Rongrong Li|Peng Yuan|Xiaoping Gao|Enzi Chen| |
| 5 | Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure | 期刊论文 | Liping Fu|Rongrong Li|Xiaoping Gao|Chunlan Tao| |
| 6 | Research on feasibility of using a Transient Voltage Suppressor as the selection device for bipolar RRAM | 期刊论文 | Liping Fu|Chuanbing Chen|Peng Yuan|Xiaoping Gao| |
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