基于部分复合埋层结构的横向变RESURF技术高压SOI LDMOS器件研究

61574023
2015
F0404.半导体电子器件与集成
胡盛东
面上项目
教授
重庆大学
64万元
比导通电阻;自热效应;表面场降低技术;绝缘体上的硅功率MOS;击穿电压
2016-01-01到2019-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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重置
序号 标题 类型 作者
1 A novel SOI trench LDMOS with vertical double-RESRUF layer 会议论文 Jianmei Lei;Shengdong Hu;Song Wang;Zhi Lin
2 Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode 期刊论文 Lin Zhi;Hu Shengdong;Yuan Qi;Zhou Xichuan;Tang Fang
3 一种具有内嵌异质结二极管自保护的碳化硅槽型场氧功率MOS器件 专利 胡盛东;安俊杰
4 一种非对称异质结碳化硅槽型场氧功率MOS器件 专利 胡盛东;安俊杰
5 Performance improvement of organic thin film transistors by using active layer with sandwich structure 期刊论文 Ni Yao;Zhou Jianlin;Kuang Peng;Lin Hui;Gan Ping;Hu Shengdong;Lin Zhi
6 Ultra-Low Specific On-Resistance Trench SOI LDMOS with a Floating Lateral Field Plate 期刊论文 Yang Dong;Hu Shengdong;Huang Ye;Jiang Yuyu;Cheng Kun;Yuan Qi;Lei Jianmei;Lin Zhi;Zhou Xichuan;Tang Fang
7 Investigation of a novel SOI LDMOS using p plus buried islands in the drift region by numerical simulations 期刊论文 Lei Jianmei;Hu Shengdong;Yang Dong;Huang Ye;Yuan Qi;Guo Jingwei;Zeng Linghui;Wang Siqi;Yang Xuan
8 SiC trench MOSFET with heterojunction diode for low switching loss and high short-circuit capability 期刊论文 An Junjie;Hu Shengdong
9 一种具有纵向NPN结构的双栅LDMOS器件 专利 胡盛东;金晶晶;陈银晖;朱志;武星河;李少红;阮祯臻;丁文春
10 汽车整车级电磁兼容性能分析预测关键技术研究 奖励 雷剑梅;赖志达;何举刚;杨子发;高阳春;刘杰;陈立东;郭迪军;高新杰;胡盛东
11 Improving breakdown performance for novel LDMOS using n( ) floating islands in substrate 期刊论文 Chen Yinhui;Hu Sheng Dong;Cheng Kun;Jiang Yuyu;Zhou Jianlin;Tang Fang;Zhou Xi Chuan;Gan Ping
12 Influence of underneath pentacene thickness on performance of p-n heterojunction organic thin film transistors 期刊论文 Zhou Jianlin;Jiang Yuyu;Wang Zhen;Hu Shengdong;Gan Ping;Shen Xiaoqing
13 An ultra-low specific on-resistance double-gate trench SOI LDMOS with P/N pillars 期刊论文 Yang Dong;Hu Shengdong;Lei Jianmei;Huang Ye;Yuan Qi;Jiang Yuyu;Guo Jingwei;Cheng Kun;Lin Zhi;Zhou Xichuan;Tang Fang
14 一种具有阶梯浓度多晶硅侧墙结构的超结VDMOS器件 专利 胡盛东;郭经纬;杨冬;黄野;袁琦;胡伟;汤培顺;唐唯净
15 Improved SOI LDMOS performance by using a partial stepped polysilicon layer as the buried layer 期刊论文 Guo Jingwei;Hu Shengdong;Huang Ye;Yuan Qi;Yang Dong;Yang Ling;You Liang;Yu Jianyi
16 A comparative study of a deep-trench superjunction SiC VDMOS device 期刊论文 Hu Shengdong;Huang Ye;Liu Tao;Guo Jingwei;Wang Jian'an;Luo Jun
17 一种具有保护层和异质结二极管的碳化硅槽型场氧功率MOS器件 专利 胡盛东;安俊杰
18 一种具有变K介质槽的超结碳化硅VDMOS器件 专利 胡盛东;黄野;郭经纬;杨冬;袁琦;刘畅
19 A novel trench SOI LDMOS with a dual floating vertical field plate 期刊论文 Cheng Kun;Hu Shengdong;Lei Jianmei;Yuan Qi;Jiang Yuyu;Huang Ye;Yang Dong;Lin Zhi;Zhou Xichuan;Tang Fang
20 Improving breakdown, conductive, and thermal performances for SOI high voltage LDMOS using a partial compound buried layer 期刊论文 Hu Shengdong;Luo Jun;Jiang YuYu;Cheng Kun;Chen Yinhui;Jin Jingjing;Wang Jian'an;Zhou Jianlin;Tang Fang;Zhou Xichuan;Gan Ping
21 一种横向功率MOS高压器件 专利 胡盛东;黄野;杨冬;袁琦;郭经纬;林智
22 Simulation-based performance analysis of an ultra-low specific on-resistance trench SOI LDMOS with a floating vertical field plate 期刊论文 Cheng Kun;Hu Shengdong;Jiang Yuyu;Yuan Qi;Yang Dong;Huang Ye;Lei Jianmei;Lin Zhi;Zhou Xichuan;Tang Fang
23 Heterojunction Diode Shielded SiC Split-Gate Trench MOSFET With Optimized Revere Recovery Characteristic and Low Switching Loss 期刊论文 An Junjie;Hu Shengdong
24 一种具有界面栅的SOI功率器件结构 专利 胡盛东;陈银晖;金晶晶;朱志;武星河;雷剑梅;周喜川
25 A novel low specific on-resistance double-gate LDMOS with multiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate 期刊论文 Chen Yinhui;Hu Shengdong;Cheng Kun;Jiang YuYu;Luo Jun;Wang Jian'an;Tang Fang;Zhou Xichuan;Zhou Jianlin;Gan Ping
26 Performance analysis of a novel trench SOI LDMOS with centrosymmetric double vertical field plates 期刊论文 Lei Jianmei;Hu Shengdong;Yang Dong;Huang Ye;Chen Lidong;Guo Jingwei;Liu Chang;Liu Tao;Wang Yuan
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