基于离子注入技术新型平面结构4H-SiC APD的研究
序号 | 标题 | 类型 | 作者 |
---|---|---|---|
1 | 4H-SiC p-i-n Low-Energy X-Ray Detectors With P-Layer Formed by Al Implantation | 期刊论文 | Qunsi Yang;Qing Liu;Xinghua Liu;Yiwang Wang;Dong Zhou |
2 | 4H-SiC δn-i-p extreme ultraviolet detector with gradient doping-induced surface junction | 期刊论文 | Zhiyuan Wang;Dong Zhou;Weizong Xu;Yiwang Wang;Fangfang Ren;Dunjun Chen;Rong Zhang;Youdou Zheng;Hai Lu |
3 | 一种新型离子注入弧形钝化介质终端的4H-SiC雪崩光电探测器 | 专利 | 周东;陆海;徐尉宗;任芳芳;周峰 |
4 | 一种4H-SiC极紫外探测与雪崩光电探测器 | 专利 | 周东;陆海;范兆媛;徐尉宗;任芳芳;周峰 |
5 | Demonstration of a Solar-Blind Single-Photon Imaging Lidar Based on SiC Ultraviolet Avalanche Photodiodes | 期刊论文 | Zhengfang Li;Dong Zhou;Weizong Xu;Feng Ren;Rong Zhang;Youdou Zheng;Hai Lu |
6 | 一种全平面离子注入倾斜高阻终端结构的4H-SiC雪崩光电探测器 | 专利 | 周东;陆海;徐尉宗;任芳芳;周峰 |
7 | Avalanche mechanism analysis of 4H-SiC n-i-p and p-i-n avalanche photodiodes working in Geiger mode | 期刊论文 | Su Linlin;Xu Weizong;Zhou Dong;Ren Fangfang;Chen Dunjun;Zhang Rong;Zheng Youdou;Lu Hai |