深紫外type-II量子阱的能带工程及与表面等离激元耦合的研究

61874168
2018
F0405.半导体器件物理
李毅
面上项目
讲师
南通大学
47万元
FDTD;表面等离激元耦合;K-P方法;氮化物基深紫外LED;能带工程
2019-01-01到2022-12-31
  • 中英文摘要
  • 结题摘要
  • 结题报告
  • 项目成果
  • 项目参与人
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序号 标题 类型 作者
1 Characterization of the Micro-Structural Properties of InAlN/GaN Epilayer Grown by MOCVD 期刊论文 Youhua Zhu;Tao Hu;Meiyu Wang;Yi Li;Mei Ge;Xinglong Guo;Honghai Deng;Zhitao Chen
2 Improvement of TE-polarized emission in type-II InAlN–AlGaN/AlGaN quantum well 期刊论文 Li Yi;Zhu Youhua;Wang Meiyu;Deng Honghai;Yin Haihong
3 一种氮化物量子阱结构深紫外发光二极管 专利 李毅;钱星鹏;朱友华;王美玉
4 High brightness and broad modulation bandwidth InGaN-based red micro-LEDs integrated with plasmonic gratings 期刊论文 Guogang Zhang;Lijun Zhang;Fang-Fang Ren;Yi Li;Yongjin Wang
5 一种氮化物量子阱结构发光二极管 专利 李毅;朱友华;刘轩;王美玉
6 一种耦合量子阱结构深紫外AlGaN基发光二极管 专利 李毅;朱友华;王美玉;胡涛;葛梅
7 Investigation on Light Extraction Behavior of Surface Plasmon-Coupled Deep-Ultraviolet LED in Different Emission Directions 期刊论文 Mei Ge;Yi Li;Youhua Zhu;Meiyu Wang
8 Optical polarization characteristics for AlGaN-based light-emitting diodes with AlGaN multilayer structure as well layer 期刊论文 Xue Lu;Li Yi;Ge Mei;Wang Mei-Yu;Zhu You-Hua
9 Investigation of optical polarization characteristics for an AlGaN-based quantum well structure 期刊论文 Li Yi;Zhu Youhua;Mei Ge;Wang Meiyu;Deng Honghai;Yin HaiHong
10 Enhanced TE-polarized emission of AlGaN-based deep-ultraviolet light emitting diodes by using an InAlN insertion layer 期刊论文 Yi Li;Youhua Zhu;Meiyu Wang;Honghai Deng;HaiHong Yin
11 4 -inch蓝宝石图形衬底上GaN基白光LED制备及表征 期刊论文 朱友华;刘轩;王美玉;李毅
12 Investigation of the optical properties of a deep-ultraviolet LED with an Al nanograting structure 期刊论文 YI LI;MEI GE;MEIYU WANG;XINGLONG GUO;YOUHUA ZHU
13 阶梯状量子阱结构对蓝光GaN 基LED 性能的改善 期刊论文 刘轩;王美玉;李毅;朱友华
14 Effect of surface plasmon coupling with radiating dipole on the polarization characteristics of AlGaN-based light-emitting diodes 期刊论文 Yi Li;Mei Ge;Meiyu Wang;Youhua Zhu;Xinglong Guo
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