1 |
Electric field enhanced hydrogen storage on polarizable materials substrates
|
期刊论文 |
J. Zhou;Q. Wang;Q. Sun;P. Jena;X. S. Chen |
2 |
Ferromagnetism in Semihydrogenated Graphene Sheet
|
期刊论文 |
Zhou J.;Wang Q.;Sun Q.;Chen X. S.;Kawazoe Y.;Jena P. |
3 |
A novel plasmonic resonance sensor based on an infrared perfect absorber
|
期刊论文 |
Li Guanhai;Chen Xiaoshuang;Li Oupeng;Shao Chengxue;Jiang Yuan;Huang Lujun;Ni Bo;Hu Weida;Lu Wei |
4 |
Low-Roughness Plasma Etching of HgCdTe Masked with Patterned Silicon Dioxide
|
期刊论文 |
Ye Z. H.;Hu W. D.;Yin W. T.;Huang J.;Lin C.;Hu X. N.;Ding R. J.;Chen X. S.;Lu W.;He L. |
5 |
The localized near-field enhancement of metallic periodic bowtie structure: An oscillating dipoles picture
|
期刊论文 |
Li Guanhai;Chen Xiaoshuang;Huang Lujun;Wang Jian;Hu Weida;Lu Wei |
6 |
Sources of carrier compensation in arsenic-doped HgCdTe
|
期刊论文 |
Duan, H.|Dong, Y. Z.|Luo, J.|Huang, Y.|Chen, X. S.|Lu, W.| |
7 |
A hybrid surface passivation on HgCdTe long wave infrared detector with in-situ CdTe deposition and high-density hydrogen plasma modification
|
期刊论文 |
Hu W. D.;Chen X. S.;Ye Z. H.;Lu W. |
8 |
Different approximations of carrier statistics in middle-wavelength infrared HgCdTe photovoltaic devices with nonparabolic band
|
期刊论文 |
Wang, Jun|Chen, Xiaoshuang|Hu, Weida|Wang, Lin|Chen, Yongguo|Lu, Wei|Xu, Faqiang| |
9 |
Analysis of Interface Scattering in AlGaN/GaN/InGaN/GaN Double-Heterojunction High-Electron-Mobility Transistors
|
期刊论文 |
Wang Lin;Hu Weida;Chen Xiaoshuang;Lu Wei |
10 |
Nonequilibrium carrier distribution in semiconductor photodetectors: Surface leakage channel under illumination
|
期刊论文 |
Yin, Hao|Li, Tian-xin|Hu, Wei-da|Wang, Wen-juan|Li, Ning|Chen, Xiao-shuang|Lu, Wei| |
11 |
STUDIES ON A NOVEL MASK TECHNIQUE WITH HIGH SELECTIVITY AND ASPECT-RATIO PATTERNS FOR HgCdTe TRENCHES ICP ETCHING
|
会议论文 |
He, L.|Hu, W. D.|Li, Y.|Huang, J.|Yin, W. T.|Lin, C.|Hu, X. N.|Ding, R. J.|Chen, X. S.| |
12 |
The role of localized junction leakage in the temperature-dependent laser-beam-induced current spectra for HgCdTe infrared focal plane array photodiodes
|
期刊论文 |
Feng A. L.;Li G.;He G.;Sun Z. Q.;Hu W. D.;Chen X. S.;Yin F.;Zhang B.;Lu W. |
13 |
External Electric Field Modulation of Structural Configurations and Electronic Properties of Gold Dimers on Graphene
|
期刊论文 |
Zhou X. H.;Huang Y.;Chen X. S.;Lu W. |
14 |
Abnormal physics of group-II telluride system: valence contribution of d electrons
|
期刊论文 |
Duan He;Dong You-Zhong;Huang Yan;Chen Xiao-Shuang |
15 |
The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs
|
期刊论文 |
Wang Xiao-Dong;Hu Wei-Da;Chen Xiao-Shuang;Lu Wei |
16 |
Compensation mechanism for As donor in Hg1-xCdxTe: The case of As-Hg-V-Hg pair
|
期刊论文 |
Duan H.;Dong Y. Z.;Chen X. S.;Hu Y. H.;Wang Y. H.;Lu W. |
17 |
Dependence of Ion-Implant-Induced LBIC Novel Characteristic on Excitation Intensity for Long-Wavelength HgCdTe-Based Photovoltaic Infrared Detector Pixel Arrays
|
期刊论文 |
Hu Wei-Da;Chen Xiao-Shuang;Ye Zhen-Hua;Feng A-Li;Yin Fei;Zhang Bo;Liao Lei;Lu Wei |
18 |
Optimization of Microlenses for InSb Infrared Focal-Plane Arrays
|
期刊论文 |
Guo N.;Hu W. D.;Chen X. S.;Meng C.;Lv Y. Q.;Lu W. |
19 |
Characterization of Te-antisite-related defects in HgCdTe
|
期刊论文 |
Wang Ziyan;Huang Yan;Chen Xiaoshuang;Zhou Xiaohao;Zhao Huxian;Lu Wei |
20 |
Amorphous HgCdTe infrared photoconductive detector with high detectivity above 200 K
|
期刊论文 |
Wang Jun;Chen Xiaoshuang;Hu Weida;Wang Lin;Lu Wei;Xu Faqiang;Zhao Jun;Shi Yanli;Ji Rongbin |
21 |
Accurate Simulation of Temperature-Dependent Dark Current in HgCdTe Infrared Detectors Assisted by Analytical Modeling
|
期刊论文 |
Hu Weida;Chen Xiaoshuang;Ye Zhenhua;Zhang Jing;Yin Fei;Lin Chun;Li Zhifeng;Lu Wei |
22 |
Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination
|
期刊论文 |
Nan Guo;Weida Hu;Xiaoshuang Chen;Wen Lei;Yanqiu Lv;Xiaolei Zhang;Junjie Si;Wei Lu |
23 |
Temperature dependence characteristics of dark current for arsenic doped LWIR HgCdTe detectors
|
期刊论文 |
Jun Wang;Xiaoshuang Chen;Weida Hu;Zhenghua Ye;Chun Lin;Xiaoning Hu;Jin Guo;Feng Xie;Jie Zhou;Jian Liang;Xiaofang Wang;Wei Lu |
24 |
Model of V (Hg) Incorporation in Arsenic-Doped HgCdTe: First-Principles Calculations
|
期刊论文 |
Duan H.;Dong Y. Z.;Huang Y.;Chen X. S.;Lu W. |
25 |
Enhanced plasmonic resonant excitation in a grating gated field-effect transistor with supplemental gates
|
期刊论文 |
Nan Guo|Weida Hu|Xiao-Shuang Chen|Lin Wang|Wei Lu| |
26 |
The plasmonic resonant absorption in GaN double-channel high electron mobility transistors
|
期刊论文 |
Wang Lin;Chen Xiao-Shuang;Hu Wei-Da;Wang Jun;Wang Jian;Wang Xiao-Dong;Lu Wei |
27 |
Two-photon absorption coefficient spectra of indirect transitions in silicon
|
期刊论文 |
Cui Hao-Yang;Li Zhi-Feng;Ma Fa-Jun;Chen Xiao-Shuang;Lu Wei |
28 |
Plasmon resonant excitation in grating-gated AlN barrier transistors at terahertz frequency
|
期刊论文 |
Wang Lin;Hu Weida;Wang Jun;Wang Xiaodong;Wang Shaowei;Chen Xiaoshuang;Lu Wei |
29 |
First-principles study of gold p-type doping in Hg1-xCdxTe
|
期刊论文 |
Han Jin-Liang;Sun Li-Zhong;Chen Xiao-Shuang;Lu Wei;Zhong Jian-Xin |
30 |
Interaction Between AsHg and VHg in Arsenic-Doped Hg1-xCdxTe
|
期刊论文 |
Wang Ziyan;Huang Yan;Chen Xiaoshuang;Zhao Huxian;Lei Wen;Lu Wei |
31 |
Role of Chemical Potential in Tuning Equilibrium Crystal Shape and Electronic Properties of Wurtzite GaAs Nanowires
|
期刊论文 |
Jin Mengting;Shu Haibo;Liang Pei;Cao Dan;Chen Xiaoshuang;Lu Wei |
32 |
ELECTRONIC PROPERTIES OF HgTe WITHIN DIFFERENT STRUCTURES
|
期刊论文 |
Zhao Huxian;Chen Xiaoshuang;Lu Jianping;Lu Wei |
33 |
An improvement on short-wavelength photoresponse for a heterostructure HgCdTe two-color infrared detector
|
期刊论文 |
Hu Wei-Da;Chen Xiao-Shuang;Ye Zhen-Hua;Lu Wei |
34 |
First-Principles Study of Initial Growth of InP Nanowires: Self-Catalytic Effect and Nucleation Mechanism of In Adatoms
|
期刊论文 |
Shu Haibo;Chen Xiaoshuang;Zhou Xiaohao;Ding Zongling;Lu Wei |
35 |
Modeling of dark current suppression in unipolar barrier infrared detectors
|
会议论文 |
Wang Jun;Chen Xiaoshuang;Hu Weida;Chen Yongguo;Wang Lin;Lu Wei;Xu Faqiang |
36 |
The important features of V-Hg-related defects in arsenic-doped HgCdTe
|
期刊论文 |
Duan H.;Dong Y. Z.;Lin Z. P.;Huang Y.;Chen X. S.;Lu W. |
37 |
Magic Carbon Clusters in the Chemical Vapor Deposition Growth of Graphene
|
期刊论文 |
Yuan Qinghong;Gao Junfeng;Shu Haibo;Zhao Jijun;Chen Xiaoshuang;Ding Feng |
38 |
Structural and electronic properties of amorphous InSb from first principles study
|
期刊论文 |
Wang L.;Chen X. S.;Huang Y.;Lu W.;Zhao J. J. |
39 |
Temperature dependence on photosensitive area extension in mercury cadmium telluride photodiodes using laser beam induced current
|
期刊论文 |
Chen Yongguo;Hu Weida;Chen Xiaoshuang;Ye Zhenhua;Wang Jun;Wang Xiaofang;Yu Chenhui;Lu Wei |
40 |
The resonant tunability, enhancement, and damping of plasma waves in the two-dimensional electron gas plasmonic crystals at terahertz frequencies
|
期刊论文 |
Wang Lin;Chen Xiaoshuang;Hu Weida;Yu Anqi;Lu Wei |
41 |
Preferential adsorption of gallium on GaAs(111)B surfaces during the initial growth of Au-assisted GaAs nanowires
|
期刊论文 |
Shu Haibo;Chen Xiaoshuang;Ding Zongling;Dong Ruibin;Lu Wei |
42 |
ENERGETICS OF V-Hg-RELATED DEFECTS IN As-DOPED HgCdTe
|
期刊论文 |
He Duan;Youzhong Dong;Zhiping Lin;Xin Zhang;Yan Huang;Xiaoshuang Chen |
43 |
Catalytic effect and nucleation stability of Au on GaAs(111)B surface
|
期刊论文 |
Shu Haibo;Chen Xiaoshuang;Lu Wei |
44 |
First-Principles Study of the Doping of InAs Nanowires: Role of Surface Dangling Bonds
|
期刊论文 |
Shu Haibo;Chen Xiaoshuang;Ding Zongling;Dong Ruibing;Lu Wei |
45 |
Transport Properties of Graphene Nanoribbon-Based Molecular Devices
|
期刊论文 |
Ding Zongling;Jiang Jun;Xing Huaizhong;Shu Haibo;Dong Ruibin;Chen Xiaoshuang;Lu Wei |
46 |
Design of highly directive antenna made of homogeneous media
|
期刊论文 |
Huang Lujun;Chen Xiaoshuang;Ni Bo;Li Guanhai;Li Zhifeng;Lu Wei |
47 |
Investigations on a Multiple Mask Technique to Depress Processing-Induced Damage of ICP-Etched HgCdTe Trenches
|
期刊论文 |
Ye Z. H.;Hu W. D.;Lei W.;Yang L.;Zhang P.;Huang Y.;Lin C.;Sun C. H.;Hu X. N.;Ding R. J.;Chen X. S.;Lu W.;He L. |
48 |
The mechanism of the photoresponse blueshifts for the n-type conversion region of n(+)-on-p Hg0.722Cd0.278Te infrared photodiode
|
期刊论文 |
Wang Jun;Chen Xiaoshuang;Wang Ziqian;Hu Weida;Lu Wei;Xu Faqiang |
49 |
Investigation of Radiation Collection by InSb Infrared Focal-Plane Arrays with Micro-optic Structures
|
期刊论文 |
Guo N.;Hu W. D.;Chen X. S.;Lei W.;Lv Y. Q.;Zhang X. L.;Si J. J.;Lu W. |
50 |
Band gap tuning in HgTe through uniaxial strains
|
期刊论文 |
Huxian Zhao;Xiaoshuang Chen;Jianping Lu;Haibo Shu;Wei Lu |
51 |
Laser Power and Temperature Dependence on Laser Beam Induced Current Signal in As-doped p-type HgCdTe
|
会议论文 |
Chen Yongguo;Hu Weida;Chen Xiaoshuang;Ye Zhenhua;Wang Jun;Lin Chun;Hu Xiaoning;Lu Wei |
52 |
Polarity inversion and coupling of laser beam induced current in As-doped long-wavelength HgCdTe infrared detector pixel arrays: Experiment and simulation
|
期刊论文 |
Hu W. D.;Chen X. S.;Ye Z. H.;Chen Y. G.;Yin F.;Zhang B.;Lu W. |
53 |
Edge Structural Stability and Kinetics of Graphene Chemical Vapor Deposition Growth
|
期刊论文 |
Shu Haibo;Chen Xiaoshuang;Tao Xiaoming;Ding Feng |