紫外-红外双色探测材料和器件新原理研究
10990102
2009
A2004.凝聚态物质电子结构
张宝顺
重大项目
研究员
中国科学院苏州纳米技术与纳米仿生研究所
200万元
子带跃迁；双色；探测器；量子阱；氮化物
2010-01至2013-12
- 中英文摘要
- 结题摘要
- 结题报告
- 项目成果
- 项目参与人
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| 序号 | 标题 | 类型 | 作者 |
|---|---|---|---|
| 1 | Effects of Growth Temperature on Properties of Nonpolar a-Plane ZnO Films on GaN Templates by Pulsed Laser Deposition | 期刊论文 | Jiangnan Dai;Xiangyun Han;Zhihao Wu;Yanyan Fang;Hui Xiong;Yu Tian;Chenhui Yu;Qinghua He;Changqing Chen |
| 2 | Effects of the V/III Ratio of a Low-Temperature GaN Buffer Layer on the Structural and Optical Properties of a-GaN Films Grown on r-Plane Sapphire Substrates by MOCVD | 期刊论文 | Tian Yu;Dai Jiang-Nan;Xiong Hui;Zheng Guang;Ryu My;Fang Yan-Yan;Chen Chang-Qing |
| 3 | Effect of polarization on intersubband transition in AlGaN/GaN multiple quantum wells | 期刊论文 | Chen G.;Li Z. L.;Wang X. Q.;Huang C. C.;Rong X.;Sang L. W.;Xu F. J.;Tang N.;Qin Z. X.;Sumiya M.;Chen Y. H.;Ge W. K.;Shen B. |
| 4 | Effect of dual buffer layer structure on the epitaxial growth of AlN on sapphire | 期刊论文 | Zhao, D. G.|Zhang, S. M.|Yang, H.|Jiang, D. S.|Wu, L. L.|Le, L. C.|Li, L.|Chen, P.|Liu, Z. S.|Zhu, J. J.|Wang, H.| |
| 5 | A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe | 期刊论文 | Chen Ping;Zhao De-Gang;Feng Mei-Xin;Jiang De-Sheng;Liu Zong-Shun;Zhang Li-Qun;Li De-Yao;Liu Jian-Ping;Wang Hui;Zhu Jian-Jun;Zhang Shu-Ming;Zhang Bao-Shun;Yang Hui |
| 6 | High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy | 期刊论文 | Wang Xinqiang;Liu Shitao;Ma Nan;Feng Li;Chen Guang;Xu Fujun;Tang Ning;Huang Sen;Chen Kevin J.;Zhou Shengqiang;Shen Bo |
| 7 | Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition | 期刊论文 | Deng, Y.|Yang, Hui|Liang, J. W.|Zhao, D. G.|Le, L. C.|Jiang, D. S.|Wu, L. L.|Zhu, J. J.|Wang, H.|Liu, Z. S.|Zhang, S. M.| |
| 8 | Different strain relief behaviors in Al(0.35)Ga(0.65)N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers | 期刊论文 | Huang C. C.;Xu F. J.;Song J.;Xu Z. Y.;Wang J. M.;Zhu R.;Chen G.;Wang X. Q.;Yang Z. J.;Shen B.;Chen X. S.;Lu W. |
| 9 | Effect of In incorporation parameters on the electroluminescence of blue-violet InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition | 期刊论文 | Zhao, D. G.|Jia, Q. J.|Yang, Hui|Jiang, D. S.|Le, L. C.|Wu, L. L.|Li, L.|Zhu, J. J.|Wang, H.|Liu, Z. S.|Zhang, S. M.| |
| 10 | Temperature sensitive photoconductivity observed in InN layers | 期刊论文 | Guo Lei;Wang Xinqiang;Feng Li;Zheng Xiantong;Chen Guang;Yang Xuelin;Xu Fujun;Tang Ning;Lu Liwu;Ge Weikun;Shen Bo |
| 11 | The Effect of AlN Nucleation Temperature on the Growth of AlN Films via Metalorganic Chemical Vapor Deposition | 期刊论文 | Hu Wang|Senlin Li|Hui Xiong|Zhihao Wu|Jiangnan Dai|Yu Tian|Yanyan Fang|Changqing Chen| |
| 12 | Ionic liquid gated electric-double-layer transistors based on Mg-doped InN epitaxial films | 期刊论文 | Chen, Z. Y.|Yuan, H. T.|Wang, X. Q.|Ma, N.|Zhang, Y. W.|Shimotani, H.|Qin, Z. X.|Shen, B.|Iwasa, Y.| |
| 13 | ICP刻蚀GaN侧壁倾角以及刻蚀速率的控制 | 期刊论文 | 王玮;蔡勇;张宝顺;黄伟;李海鸥 |
| 14 | Fabrication of GaN nanodots via GaN thermal decomposition in H2 atmosphere | 期刊论文 | Xiong Hui;Jin Zhang;Senlin Li;Hu Wang;Yanyan Fang;J. N. Dai;C. Q. Chen |
| 15 | Temperature-controlled epitaxy of InxGa1-xN alloys and their band gap bowing | 期刊论文 | Liu S. T.;Wang X. Q.（王新强）;Chen G.;Zhang Y. W.（张跃伟）;Feng L.;Huang C. C.;Xu F. J.;Tang N.（唐宁）;Sang L. W.;Sumiya M.;Shen B.（沈波） |
| 16 | Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN | 期刊论文 | Wu L. L.;Zhao D. G.;Jiang D. S.;Chen P.;Le L. C.;Li L.;Liu Z. S.;Zhang S. M.;Zhu J. J.;Wang H.;Zhang B. S.;Yang H. |
| 17 | Simulation of the light extraction efficiency of nanostructure light-emitting diodes | 期刊论文 | Zhu Ji-Hong;Wang Liang-Ji;Zhang Shu-Ming;Wang Hui;Zhao De-Gang;Zhu Jian-Jun;Liu Zong-Shun;Jiang De-Sheng;Yang Hui |
| 18 | Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector | 期刊论文 | D. S.|Liu|J. J.|Zhao|S. M.|Z. S.|Wang|Yang|Hui|D. G.|Zhang|Zhu|Jiang|H.| |
| 19 | Vacancy-type defects in InxGa1-xN alloys probed using a monoenergetic positron beam | 期刊论文 | Uedono A.;Ishibashi S.;Watanabe T.;Wang X. Q.;Liu S. T.;Chen G.;Sang L. W.;Sumiya M.;Shen B. |
| 20 | Effect of Grain Boundary Scattering on Electron Mobility of N-Polarity InN Films | 期刊论文 | Yuewei Zhang|Xinqiang Wang|Xiantong Zheng|Guang Chen|Dingyu Ma|Fujun Xu|Ning Tang|Weikun Ge|Bo Shen| |
| 21 | Improvement of characteristics of InGaN-based laser diodes with undoped InGaN upper waveguide layer | 期刊论文 | Chen Ping;Feng Meixin;Jiang Desheng;Zhao Degang;Liu Zongshun;Li Liang;Wu Liangliang;Le Lingcong;Zhu Jianjun;Wang Hui;Zhang Shuming;Yang Hui |
| 22 | The investigation on carrier distribution in InGaN/GaN multiple quantum well layers | 期刊论文 | Zhu J. H.;Zhang S. M.;Wang H.;Zhao D. G.;Zhu J. J.;Liu Z. S.;Jiang D. S.;Qiu Y. X.;Yang H. |
| 23 | High quality GaN epilayers grown on Si (1 1 1) with thin nonlinearly composition-graded AlxGa1-xN interlayers via metal-organic chemical vapor deposition | 期刊论文 | Xiang, R. F.|Hao, Y.|Fang, Y-Y.|Dai, J. N.|Zhang, L.|Su, C. Y.|Wu, Z. H.|Yu, C. H.|Xiong, H.|Chen, C. Q.| |
| 24 | Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD | 期刊论文 | Yu Chen-Hui;Liu Cheng;Han Xiang-Yun;Kang Wei;Fang Yan-Yan;Dai Jiang-Nan;Wu Zhi-Hao;Chen Chang-Qing |
| 25 | Influence of growth conditions on the lateral grain size of AlN film grown by metal-organic chemical vapor deposition | 期刊论文 | Wu, Liang-Liang|Zhao, De-Gang|Li, Liang|Le, Ling-Cong|Chen, Ping|Liu, Zong-Shun|Jiang, De-Sheng| |
| 26 | Effects of Al 0.3 Ga 0.7 As interlayer with pulsed atomic layer epitaxy on heterogeneous integration of GaAs / Ge grown by MOCVD | 期刊论文 | SC Sun|ZQ Qi|HQ Chen|XH Huang|W Tian...| |
| 27 | A study on the spectral response of back-illuminated p-i-n AlGaN heterojunction ultraviolet photodetector | 期刊论文 | Zhao D. G.;Zhang S.;Jiang D. S.;Zhu J. J.;Liu Z. S.;Wang H.;Zhang S. M.;Zhang B. S.;Yang H. |
| 28 | 器件参数对GaN基n+-GaN/i-Alx Ga1-xN/n+-GaN结构紫外和红外双色探测器中紫外响应的影响 | 期刊论文 | Deng Yi|Zhao De-Gang|Wu Liang-Liang|Liu Zong-Shun|Zhu Jian-Jun|Jiang De-Sheng|Zhang Shu-Ming|Liang Jun-Wu| |
| 29 | Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN | 期刊论文 | Li Xiao-Jing;Zhao De-Gang;He Xiao-Guang;Wu Liang-Liang;Li Liang;Yang Jing;Le Ling-Cong;Chen Ping;Liu Zong-Shun;Jiang De-Sheng |
| 30 | Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness | 期刊论文 | Le L. C.;Zhao D. G.;Jiang D. S.;Li L.;Wu L. L.;Chen P.;Liu Z. S.;Yang J.;Li X. J.;He X. G.;Zhu J. J.;Wang H.;Zhang S. M.;Yang H. |
| 31 | The Effects of a Low-Temperature GaN Interlayer on the Performance of InGaN/GaN Solar Cells | 期刊论文 | Li Liang;Zhao De-Gang;Jiang De-Sheng;Liu Zong-Shun;Chen Ping;Wu Liang-Liang;Le Ling-Cong;Wang Hui;Yang Hui |
| 32 | Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime | 期刊论文 | Yang Jing;Zhao De-Gang;Jiang De-Sheng;Liu Zong-Shun;Chen Ping;Li Liang;Wu Liang-Liang;Le Ling-Cong;Li Xiao-Jing;He Xiao-Guang;Wang Hui;Zhu Jian-Jun;Zhang Shu-Ming;Zhang Bao-Shun;Yang Hui |
| 33 | Surface states of InAlN film grown by MOCVD | 期刊论文 | Yang Yan-Nan;Wang Xin-Qiang;Lu Li-Wu;Huang Cheng-Cheng;Xu Fu-Jun;Shen Bo |
| 34 | The effects of sapphire nitridation on GaN growth by metalorganic chemical vapour deposition | 期刊论文 | Le Ling-Cong|Zhang Bao-Shun|Yang Hui|Zhao De-Gang|Wu Liang-Liang|Deng Yi|Jiang De-Sheng|Zhu Jian-Jun|Liu Zong-Shun|Wang Hui|Zhang Shu-Ming| |
| 35 | Effects of the AlN buffer layer thickness on the properties of ZnO films grown on c-sapphire substrate by pulsed laser deposition | 期刊论文 | Hui Xiong|Jiangnan Dai|Hui Xiong|Yanyan Fang|Wu Tian|Daoxin Fu|Changqing Chen|Mingkai Li|Yunbin He| |
| 36 | Intersubband transitions at atmospheric window in AlxGa1-xN/GaN multiple quantum wells grown on GaN/sapphire templates adopting AlN/GaN superlattices interlayer | 期刊论文 | Huang C. C.;Xu F. J.;Yan X. D.;Song J.;Xu Z. Y.;Cen L. B.;Wang Y.;Pan J. H.;Wang X. Q.;Yang Z. J.;Shen B.;Zhang B. S.;Chen X. S.;Lu W. |
| 37 | Carriers capturing of V-defect and its effect on leakage current and electroluminescence in InGaN-based light-emitting diodes | 期刊论文 | Le, L. C.|Zhu, J. J.|Wang, H.|Zhang, S. M.|Yang, H.|Zhao, D. G.|Jiang, D. S.|Li, L.|Wu, L. L.|Chen, P.|Liu, Z. S.|Li, Z. C.|Fan, Y. M.| |
| 38 | Distribution of electric field and design of devices in GaN avalanche photodiodes | 期刊论文 | Wu LiangLiang|Yang Hui|Zhao DeGang|Deng Yi|Jiang DeSheng|Zhu JianJun|Wang Hui|Liu ZongShun|Zhang ShuMing|Zhang BaoShun| |
| 39 | Electrical and Optical Properties of a High-Voltage Large Area Blue Light-Emitting Diode | 期刊论文 | Wei Wang;Yong Cai;Wei Huang;Haiou Li;Baoshun Zhang |
| 40 | Strong enhancement of terahertz response in GaAs/AlGaAs quantum well photodetector by magnetic field | 期刊论文 | Yu C. H.;Zhang B.;Lu W.;Shen S. C.;Liu H. C.;Fang Y. -Y.;Dai J. N.;Chen C. Q. |
| 41 | Performance enhancement mechanisms of passivated InN/GaN-heterostructured ion-selective field-effect-transistor pH sensors | 期刊论文 | Lee Ching-Ting;Chiu Ying-Shuo;Wang Xin-Qiang |
| 42 | Tunable Surface Electron Spin Splitting with Electric Double-Layer Transistors Based on InN | 期刊论文 | Yin Chunming;Yuan Hongtao;Wang Xinqiang;Liu Shitao;Zhang Shan;Tang Ning;Xu Fujun;Chen Zhuoyu;Shimotani Hidekazu;Iwasa Yoshihiro;Chen Yonghai;Ge Weikun;Shen Bo |
| 43 | Quadratic electro-optic effect in GaN-based materials | 期刊论文 | Chen, P.1|Zhao, D.G.1|Zuo, Y.H.1|Jiang, D.S.1|Liu, Z.S.1|Wang, Q.M.1| |
| 44 | Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current | 期刊论文 | Gu Guodong;Cai Yong;Feng Zhihong;Liu Bo;Zeng Chunhong;Yu Guohao;Dong Zhihua;Zhang Baoshun |
| 45 | Influence of polarization-induced electric fields on coherent electron tunneling in AlN/GaN coupled double quantum wells | 期刊论文 | Cen L.B.;Shen B.;Huang C.C.;Xu F.J.;Qin Z.X.;Zhang G.Y.;Chen X.S.;Lu W.;Cen L. B |
| 46 | Terahertz intersubband transition in GaN/AlGaN step quantum well | 期刊论文 | Feng Wu;Wu Tian;Weiyi Yan;Jun Zhang;Shichuang Sun;Jiangnan Dai;Yanyan Fang;Zhihao Wu;Changqing Chen |
| 47 | All-optically controlled one-dimensional photonic crystal of AlGaN film via photorefractive effect | 期刊论文 | Xiong Hui;Yanyan Fang;Zhihao Wu;J. N. Dai;Wu Tian;C. Q. Chen |
| 48 | Positive and negative effects of oxygen in thermal annealing of p-type GaN | 期刊论文 | Wu, L. L.|Wang, H.|Zhang, B. S.|Yang, H.|Zhao, D. G.|Jiang, D. S.|Chen, P.|Le, L. C.|Li, L.|Liu, Z. S.|Zhang, S. M.|Zhu, J. J.| |
| 49 | Effect of light Si-doping on the near-band-edge emissions in high quality GaN | 期刊论文 | Yang, H.|Zhao, D.G.|Jiang, D.S.|Wu, L.L.|Li, L.|Chen, P.|Liu, Z.S.|Zhu, J.J.|Wang, H.| |
| 50 | The effects of InGaN layer thickness on the performance of InGaN/GaN p-i-n solar cells | 期刊论文 | Li Liang;Zhao De-Gang;Jiang De-Sheng;Liu Zong-Shun;Chen Ping;Wu Liang-Liang;Le Ling-Cong;Wang Hui;Yang Hui |
| 51 | Fe-doped InN layers grown by molecular beam epitaxy | 期刊论文 | Wang Xinqiang;Liu Shitao;Ma Dingyu;Zheng Xiantong;Chen Guang;Xu Fujun;Tang Ning;Shen Bo;Zhang Peng;Cao Xingzhong;Wang Baoyi;Huang Sen;Chen Kevin J.;Zhou Shengqiang;Yoshikawa Akihiko |
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